Abstract: A method involving the non-destructive testing of a sample electrical or electronic device is provided. The method includes measuring a power spectrum of the device and performing a Principal Component Analysis on the power spectrum, thereby to obtain a set of principal components of the power spectrum. The method further includes selecting a subset consisting of some of the principal components, and comparing the subset to stored reference data that include representations in terms of principal components of one or more reference populations of devices. Based at least partly on the comparison, the sample device is classified relative to the reference populations.

Abstract: A visualization method for screening electronic devices is provided. In accordance with the disclosed method, a probe is applied to a grid of multiple points on the circuit, and an output produced by the circuit in response to the stimulus waveform is monitored for each of multiple grid points where the probe is applied. A power spectrum analysis (PSA) produces a power spectrum amplitude, in each of one or more frequency bins, on the monitored output for each of the multiple grid points. The PSA provides a respective pixel value for each of the multiple grid points. An image is displayed, in which image portions representing the multiple grid points are displayed with the respective pixel values.

Abstract: The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser.

Abstract: The present invention relates to a method and system for using microwave radiation to detect contraband hidden inside of a non-metallic container, such as a pneumatic vehicle tire. The method relies on the attenuation, retardation, time delay, or phase shift of microwave radiation as it passes through the container plus the contraband. The method is non-invasive, non-destructive, low power, and does not require physical contact with the container.

Abstract: A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

Abstract: A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.