Patents by Inventor Guk-Yeong Jeong

Guk-Yeong Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating copper indium gallium selenide (CIGS) thin film for solar cell using simplified co-vacuum evaporation and copper indium gallium selenide (CIGS) thin film for solar cell fabricated by the same
    Patent number: 9472708
    Abstract: A method of fabricating a CIGS thin film for solar cells using a simplified co-vacuum evaporation process and a CIGS thin film fabricated by the method are disclosed. The method includes: (a) depositing Cu, Ga and Se on a substrate having a substrate temperature ranging from 500° C. to 600° C. through co-vacuum evaporation, (b) depositing Cu, Ga, Se and In through co-vacuum evaporation while maintaining the same substrate temperature as in step (a), and (c) depositing Ga and Se through co-vacuum evaporation, followed by depositing Se alone through vacuum evaporation while lowering the temperature of the substrate. The method can realize crystal growth and band-gap grading by Ga composition distribution while simplifying process steps and significantly reducing a film-deposition time, as compared with a conventional co-vacuum evaporation process, thereby providing improvement in process efficiency.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: October 18, 2016
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jihye Gwak, Jae-Ho Yun, SeJin Ahn, Kyung Hoon Yoon, Kee Shik Shin, Guk-Yeong Jeong, SeoungKyu Ahn, Ara Cho, Hisun Park, Sung Woo Choi
  • METHOD OF FABRICATING COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILM FOR SOLAR CELL USING SIMPLIFIED CO-VACUUM EVAPORATION AND COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILM FOR SOLAR CELL FABRICATED BY THE SAME
    Publication number: 20140326317
    Abstract: A method of fabricating a CIGS thin film for solar cells using a simplified co-vacuum evaporation process and a CIGS thin film fabricated by the method are disclosed. The method includes: (a) depositing Cu, Ga and Se on a substrate having a substrate temperature ranging from 500° C. to 600° C. through co-vacuum evaporation, (b) depositing Cu, Ga, Se and In through co-vacuum evaporation while maintaining the same substrate temperature as in step (a), and (c) depositing Ga and Se through co-vacuum evaporation, followed by depositing Se alone through vacuum evaporation while lowering the temperature of the substrate. The method can realize crystal growth and band-gap grading by Ga composition distribution while simplifying process steps and significantly reducing a film-deposition time, as compared with a conventional co-vacuum evaporation process, thereby providing improvement in process efficiency.
    Type: Application
    Filed: February 5, 2013
    Publication date: November 6, 2014
    Inventors: Jihye Gwak, Jae-Ho Yun, SeJin Ahn, Kyung Hoon Yoon, Kee Shik Shin, Guk-Yeong Jeong, SeoungKyu Ahn, Ara Cho, Hisun Park, Sung Woo Choi