Abstract: A method and apparatus for checking the weighing one or more objects in a vibratory apparatus comprising the steps of accepting product into an in-line feeder to a discharge feeder without being weighed, determining an angle of decline of a fixed chute and a rotating chute based upon the flowing characteristics of the free flowing material being transferred, generating a sampling signal by a control system, the sampling signal causing the air cylinder to rotate the rotating chute in the position to capture the free flowing material and weighing the in-line sample for comparison purposes with the calculated weight.

Abstract: Compounds of the formula wherein R1 represents optionally substituted C1-C10 alkyl, aryl or heteroaryl, and R3 represents alkoxy-substituted aryl or optionally substituted heteroaryl, are disclosed as Mnk2 inhibitors which are useful for the treatment and prevention of metabolic disorders such as obesity and diabetes.

Abstract: A memory device comprising an optimization component that facilitates erasing memory cells in a substantially homogeneous electromagnetic field and methods that facilitate erasing memory cells in a substantially homogeneous electromagnetic field are presented. The optimization component facilitates selecting a subset of memory cells to be erased at the same time, such that a memory cell in the subset of memory cells has two neighbor memory cells adjacent thereto that are in the subset of memory, or one neighbor memory cell adjacent thereto when the memory cell is an end-row memory cell. The optimization component facilitates performing a Fowler-Nordheim channel erase to erase the subset of memory cells, and a predetermined voltage potential associated with an erase command is applied to each cell of the subset of memory cells to facilitate reducing fringing effect associated with the electromagnetic fields applied to the cells during the erase.

Abstract: Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift.

Abstract: A memory device comprising an optimization component that facilitates erasing memory cells in a substantially homogeneous electromagnetic field and methods that facilitate erasing memory cells in a substantially homogeneous electromagnetic field are presented. The optimization component facilitates selecting a subset of memory cells to be erased at the same time, such that a memory cell in the subset of memory cells has two neighbor memory cells adjacent thereto that are in the subset of memory, or one neighbor memory cell adjacent thereto when the memory cell is an end-row memory cell. The optimization component facilitates performing a Fowler-Nordheim channel erase to erase the subset of memory cells, and a predetermined voltage potential associated with an erase command is applied to each cell of the subset of memory cells to facilitate reducing fringing effect associated with the electromagnetic fields applied to the cells during the erase.

Abstract: A memory device comprising an optimization component that facilitates erasing memory cells in a substantially homogeneous electromagnetic field and methods that facilitate erasing memory cells in a substantially homogeneous electromagnetic field are presented. The optimization component facilitates selecting a subset of memory cells to be erased at the same time, such that a memory cell in the subset of memory cells has two neighbor memory cells adjacent thereto that are in the subset of memory, or one neighbor memory cell adjacent thereto when the memory cell is an end-row memory cell. The optimization component facilitates performing a Fowler-Nordheim channel erase to erase the subset of memory cells, and a predetermined voltage potential associated with an erase command is applied to each cell of the subset of memory cells to facilitate reducing fringing effect associated with the electromagnetic fields applied to the cells during the erase.

Abstract: Systems and methods that facilitate improved programming memory cells in a nonvolatile memory (e.g., flash memory) are presented. An optimized voltage component can facilitate supplying respective voltages to a source, drain, and gate associated with a memory cell during operations, such as programming operations. The optimized voltage component can facilitate supplying a predetermined source bitline voltage to a memory cell during programming of the cell to facilitate reducing leakage currents associated with the bitlines, which can improve programming of the memory cell, and to facilitate reducing the programming current, which can result in power efficient programming and improved programming speed.

Abstract: The present invention provides a compound of formula I or II or a pharmaceutically acceptable salt form thereof, wherein R1, R2, R3, R4, R5, A1, A2, A3, A4, and A5, are as defined herein. The compounds of formula I or II have ALK and/or c-Met inhibitory activity, and may be used to treat proliferative disorders.

Abstract: Systems and methods that facilitate improved programming memory cells in a nonvolatile memory (e.g., flash memory) are presented. An optimized voltage component can facilitate supplying respective voltages to a source, drain, and gate associated with a memory cell during operations, such as programming operations. The optimized voltage component can facilitate supplying a predetermined source bitline voltage to a memory cell during programming of the cell to facilitate reducing leakage currents associated with the bitlines, which can improve programming of the memory cell, and to facilitate reducing the programming current, which can result in power efficient programming and improved programming speed.

Abstract: A memory device comprising an optimization component that facilitates erasing memory cells in a substantially homogeneous electromagnetic field and methods that facilitate erasing memory cells in a substantially homogeneous electromagnetic field are presented. The optimization component facilitates selecting a subset of memory cells to be erased at the same time, such that a memory cell in the subset of memory cells has two neighbor memory cells adjacent thereto that are in the subset of memory, or one neighbor memory cell adjacent thereto when the memory cell is an end-row memory cell. The optimization component facilitates performing a Fowler-Nordheim channel erase to erase the subset of memory cells, and a predetermined voltage potential associated with an erase command is applied to each cell of the subset of memory cells to facilitate reducing fringing effect associated with the electromagnetic fields applied to the cells during the erase.

Abstract: Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles.

Abstract: The invention relates to purinone derivatives useful in treating disorders that are mediated by adenosine receptor function, including neurodegenerative diseases and inflammation.

Abstract: N-heterocyclic compounds that block cytokine production via inhibition of p38 kinase are disclosed. In one embodiment, compounds of the present invention are represented by Formula I: Methods of production, pharmaceutical compositions and methods of treating conditions associated with inappropriate p38 kinase activity or TNF-? expression utilizing compounds of the present invention are also disclosed.

Abstract: Compounds of the formula are disclosed as Mnk2 inhibitors which are useful for the treatment and prevention of metabolic disorders such as obesity and diabetes.

Abstract: N-heterocyclic compounds that block cytokine production via inhibition of p38 kinase are disclosed. In one embodiment, compounds of the present invention are represented by Formula (I): Methods of production, pharmaceutical compositions and methods of treating conditions associated with inappropriate p38 kinase activity or TNF-? expression utilizing compounds of the present invention are also disclosed.

Abstract: The invention relates to aminopurine derivatives useful in treating disorders that are mediated by adenosine receptor function, including neurodegenerative diseases and inflammation.

Abstract: N-heterocyclic compounds that block cytokine production via inhibition of p38 kinase are disclosed. In one embodiment, compounds of the present invention are represented by Formula (I): Methods of production, pharmaceutical compositions and methods of treating conditions associated with inappropriate p38 kinase activity or TNF-? expression utilizing compounds of the present invention are also disclosed.

Abstract: N-heterocyclic compounds that block cytokine production via inhibition of p38 kinase are disclosed. In one embodiment, compounds of the present invention are represented by Formula (I): Methods of production, pharmaceutical compositions and methods of treating conditions associated with inappropriate p38 kinase activity or TNF-? expression utilizing compounds of the present invention are also disclosed.

Abstract: N-heterocyclic compounds that block cytokine production via inhibition of p38 kinase are disclosed. In one embodiment, compounds of the present invention are represented by Formula I: Methods of production, pharmaceutical compositions and methods of treating conditions associated with inappropriate p38 kinase activity or TNF-? expression utilizing compounds of the present invention are also disclosed.

Abstract: N-heterocyclic compounds that block cytokine production via inhibition of p38 kinase are disclosed. In one embodiment, compounds of the present invention are represented by Formula I: Methods of production, pharmaceutical compositions and methods of treating conditions associated with inappropriate p38 kinase activity or TNF-? expression utilizing compounds of the present invention are also disclosed.