Abstract: An inorganic composite pigment capable of elevating ultraviolet (UV) protection, and a cosmetic composition including the same, in which the inorganic composite pigment includes a core part including a white pigment; and a surface coating material, which is coated on the surface of an external part of the core part, including an inorganic solution that includes the white pigment. Additionally, the white pigment is at least one kind selected from the group consisting of titanium dioxide, zinc oxide, cerium oxide, silica, talc, mica, and borosilicate. The inorganic composite pigment according to the present disclosure capable of elevating a UV protection undergoes surface modification of the pigment through a process of re-coating a white pigment on a white pigment with a high refractive index, thereby elevating the UV protection.

Abstract: An automated gas supply system includes a gas cylinder transfer unit configured to transfer a cradle in which one or more gas cylinders storing a gas therein are stored; a gas cylinder inspection unit configured to check properties of the gas stored in the gas cylinder transferred from the gas cylinder transfer unit and check whether the gas leaks from the gas cylinder; a storage queue configured to receive the gas cylinder from the gas cylinder inspection unit by a mobile robot and configured to classify and store the transferred gas cylinders according to the properties of the gas stored in the gas cylinder; and a gas cabinet configured to receive the gas cylinder from the storage queue by the mobile robot and fasten a gas pipe, which is connected to a semiconductor manufacturing process line, to a gas spray nozzle, which is disposed at one side of the received gas cylinder, to supply the gas stored in the gas cylinder to the semiconductor manufacturing process line, wherein the gas cabinet includes a resid

Abstract: Provided are display panel manufacturing method and apparatus. The display panel manufacturing method includes detecting a machining target area of a bottom layer, removing an area, overlapping the machining target area, of a top layer, emitting a laser beam to the machining target area of the bottom layer to provide a bottom pattern from the machining target area, and providing a compensation pattern in the removed area of the top layer.

Abstract: The present disclosure relates to an organic electroluminescent compound represented by formula 1 and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound of the present disclosure, it is possible to provide an organic electroluminescent device having lower operating voltage, higher luminous efficiency and/or longer lifespan properties as compared with a conventional organic electroluminescent device.

Abstract: Disclosed is a thermal treatment system which enables a uniform temperature distribution and a uniform concentration distribution of reaction gas in an entire reaction space for a thermal treatment process, a method of performing a thermal treatment, and a method of manufacturing a CIGS solar cell using the same, wherein the thermal treatment system may include a reaction chamber with a reaction space, an external chamber surrounding the reaction chamber, a door chamber provided to open or close the reaction space of the reaction chamber, and an air flow adjusting apparatus for circulation of an flow inside the reaction space of the reaction chamber, wherein the air flow adjusting apparatus includes a driving axis, an air flow suction unit connected with the driving axis, and an air flow discharging unit connected with the air flow suction unit.

Abstract: Disclosed is a thermal treatment system which enables a uniform temperature distribution and a uniform concentration distribution of reaction gas in an entire reaction space for a thermal treatment process, a method of performing a thermal treatment, and a method of manufacturing a CIGS solar cell using the same, wherein the thermal treatment system may include a reaction chamber with a reaction space, an external chamber surrounding the reaction chamber, a door chamber provided to open or close the reaction space of the reaction chamber, and an air flow adjusting apparatus for circulation of an flow inside the reaction space of the reaction chamber, wherein the air flow adjusting apparatus includes a driving axis, an air flow suction unit connected with the driving axis, and an air flow discharging unit connected with the air flow suction unit.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.

Abstract: The present invention relates to halogen-free flameproof thermopolastic molding compounds which comprise an aromatic polycarbonate, a styrene-containing copolymer, a styrene-containing graft polymer, a phosphorus compound, a silicon compound, and a tetrafluoroethylene polymer. It has been found that the use of a specific type of silicon compound leads to a polymer mixture having improved stress crack resistance and impact properties. The silicon compound is represented as the following Formula (I). in which n and m have a value of from 5 to 8, and x and y have a value of from 1 to 5.