Patents by Inventor Gun Chen

Gun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240096867
    Abstract: A semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. The semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 21, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Charles Chew-Yuen YOUNG, Chih-Liang CHEN, Chih-Ming LAI, Jiann-Tyng TZENG, Shun-Li CHEN, Kam-Tou SIO, Shih-Wei PENG, Chun-Kuang CHEN, Ru-Gun LIU
  • Patent number: 11916077
    Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Liang Chen, Cheng-Chi Chuang, Chih-Ming Lai, Chia-Tien Wu, Charles Chew-Yuen Young, Hui-Ting Yang, Jiann-Tyng Tzeng, Ru-Gun Liu, Wei-Cheng Lin, Lei-Chun Chou, Wei-An Lai
  • Publication number: 20130342314
    Abstract: The present invention relates to a smart lock structure and an operating method thereof. The smart lock structure comprises a key hole for access keys, an interrogating device for using radio frequency technology to communicate with a mobile device and accept access requests from the mobile device to unlock the smart key structure, and a lock mechanism in response to interaction between the key hole and the access keys and communication between the interrogating device and the mobile device for unlocking the smart lock structure and gaining access thereof. The smart lock structure further comprises a falling proof device equipped beside the interrogating device to prevent falling of the mobile device. An operating method is also provided for normal operation and/or configuration of the smart lock structure.
    Type: Application
    Filed: June 22, 2012
    Publication date: December 26, 2013
    Inventors: Gun Chen, Shu-Shian Lin