Patents by Inventor Gun Do LEE

Gun Do LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor ultraviolet light emitting device having improved light extraction efficiency
    Patent number: 9978907
    Abstract: A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0?x+y?1, 0?y<0.15); and a second conductive nitride layer disposed on the active layer and having a second conductive AlGaN layer, in which the plurality of nanorods satisfy 3.5?n(?)×D/??5.0, where ? represents a wavelength of light generated by the active layer, n(?) represents a refractive index of the plurality of nanorods at a wavelength of ?, and D represents diameters of the plurality of nanorods.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: May 22, 2018
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Jung Sub Kim, Dong Hyun Lee, Jin Sub Lee, Kyung Wook Hwang, In Su Shin, Eui Joon Yoon, Gun Do Lee, Jeong Hwan Jang
  • SEMICONDUCTOR ULTRAVIOLET LIGHT EMITTING DEVICE
    Publication number: 20170054055
    Abstract: A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0?x+y?1, 0?y<0.15); and a second conductive nitride layer disposed on the active layer and having a second conductive AlGaN layer, in which the plurality of nanorods satisfy 3.5?n(?)×D/??5.0, where ? represents a wavelength of light generated by the active layer, n(?) represents a refractive index of the plurality of nanorods at a wavelength of ?, and D represents diameters of the plurality of nanorods.
    Type: Application
    Filed: May 5, 2016
    Publication date: February 23, 2017
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Jung Sub KIM, Dong Hyun LEE, Jin Sub LEE, Kyung Wook HWANG, In Su SHIN, Eui Joon YOON, Gun Do LEE, Jeong Hwan JANG