Abstract: A bill storage unit of an automated teller machine according to an embodiment includes: a lower cassette and an upper cassette which have bills stored therein and are vertically stacked; an external control board disposed outside the lower cassette and the upper cassette to perform power supply and communication signal transmission to the lower cassette and the upper cassette; first and second internal control boards electrically connected to the external control board and disposed inside the lower cassette and the upper cassette to perform power supply and communication signal transmission to each of components inside the lower cassette and components inside the upper cassette; a plurality of connectors interconnected to electrically connect the external control board and the first and second internal control boards; and a position alignment means configured to, when the upper cassette is being stacked on the lower cassette, guide the plurality of connectors to be interconnected at correct positions.

Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises: a readout circuitry, an interconnection, a contact plug, and an image sensing device. The readout circuitry is formed in a first substrate. The interconnection is electrically connected to the readout circuitry over the first substrate. The contact plug is formed over the interconnection, and includes an insulating layer at regions in an upper side thereof. The image sensing device is formed over the contact plug.

Abstract: An image sensor is provided. The image sensor comprises a readout circuitry, interconnections, a first image sensing device, and a second image sensing device. The readout circuitry is disposed on a first substrate. The interconnections comprise a first interconnection and a second interconnection on the first substrate to be electrically connected to the readout circuitry. The first image sensing device is disposed over the first interconnection. The second image sensing device is disposed over the first image sensing device and electrically connected to the second interconnection.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a first pixel having a first photodiode and a first readout circuit and a second pixel having a second photodiode and a second readout circuit. The second pixel is aligned at one side of the first pixel, and a light receiving area of the first photodiode is different from a light receiving area of the second photodiode.

Abstract: An image sensor and a method of manufacturing an image sensor. An image sensor may include a first pixel. A first pixel may include a first photodiode and a first readout circuit. An image sensor may include a second pixel. A second pixel may include a second photodiode and a second readout circuit, which may be disposed at one side of a first pixel. An image sensor may include a different threshold voltage of a first drive transistor relative to a threshold voltage of a second drive transistor. A method of manufacturing an image sensor may include forming a first pixel having a first photodiode and a first readout circuit, and may include forming a second pixel having a second photodiode and a second readout circuit, wherein a threshold voltage of a first drive transistor relative to a threshold voltage of a second drive transistor is different.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a first pixel having a first photodiode and a first readout circuit and a second pixel having a second photodiode and a second readout circuit. The second pixel is aligned at one side of the first pixel, and a light receiving area of the first photodiode is different from a light receiving area of the second photodiode.

Abstract: An image sensor is provided. The image sensor comprises a readout circuitry, interconnections, a first image sensing device, and a second image sensing device. The readout circuitry is disposed on a first substrate. The interconnections comprise a first interconnection and a second interconnection on the first substrate to be electrically connected to the readout circuitry. The first image sensing device is disposed over the first interconnection. The second image sensing device is disposed over the first image sensing device and electrically connected to the second interconnection.

Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises: a readout circuitry, an interconnection, a contact plug, and an image sensing device. The readout circuitry is formed in a first substrate. The interconnection is electrically connected to the readout circuitry over the first substrate. The contact plug is formed over the interconnection, and includes an insulating layer at regions in an upper side thereof. The image sensing device is formed over the contact plug.

Abstract: Provided is an image sensor and a method for manufacturing the same. In the image sensor, a semiconductor substrate has a readout circuitry formed thereon. An interlayer insulating layer including a lower metal line is on the semiconductor substrate, the lower metal line being electrically connected with the readout circuitry. A buffer insulating layer is on the interlayer insulating layer. A lower electrode penetrates the buffer insulating layer to be connected with the lower metal line. A crystalline semiconductor layer is on the buffer insulating layer, the crystalline semiconductor layer being partially connected with the lower electrode. A photodiode is in the crystalline semiconductor layer.