Patents by Inventor Gun Woo Han
Gun Woo Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11274961Abstract: An ultraviolet ray detecting device is provided. The ultraviolet ray detecting device comprises: a substrate; a buffer layer disposed on the substrate; a light absorption layer disposed on the buffer layer; a capping layer disposed on the light absorption layer; and a Schottky layer disposed on a partial region of the capping layer, wherein the capping layer has an energy bandgap larger than that of the light absorption layer.Type: GrantFiled: January 18, 2017Date of Patent: March 15, 2022Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ki Yon Park, Soo Hyun Lee, Choong Min Lee, Gun Woo Han
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Publication number: 20210199499Abstract: An ultraviolet ray detecting device is provided. The ultraviolet ray detecting device comprises: a substrate; a buffer layer disposed on the substrate; a light absorption layer disposed on the buffer layer; a capping layer disposed on the light absorption layer; and a Schottky layer disposed on a partial region of the capping layer, wherein the capping layer has an energy bandgap larger than that of the light absorption layer.Type: ApplicationFiled: January 18, 2017Publication date: July 1, 2021Inventors: Ki Yon Park, Soo Hyun Lee, Choong Min Lee, Gun Woo Han
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Publication number: 20200034524Abstract: Disclosed are a method and an electronic device for performing user authentication and function execution simultaneously using an artificial intelligence (AI) algorithm and/or a machine learning algorithm. The method for performing user authentication and function execution simultaneously includes receiving image data from an image acquiring unit, extracting a biometric feature image and an additional feature image from the image data, and executing a function corresponding to the additional feature image when the biometric feature image corresponds to an approved user. The function corresponding to the additional feature image is determined using an artificial neural network which is trained in advance to identify a function in accordance with an input image.Type: ApplicationFiled: October 1, 2019Publication date: January 30, 2020Applicant: LG ELECTRONICS INC.Inventor: Gun Woo HAN
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Patent number: 10323979Abstract: Disclosed are an ultraviolet measuring device, a photodetector, an ultraviolet detector, an ultraviolet index calculation device, and an electronic device or portable terminal including the same. In one aspect, an ultraviolet measuring is provided to comprise: a substrate on which an electrode is formed; a readout integrated circuit (ROTC) unit electrically connected with the electrode; and an aluminum gallium nitride (AlGaN) based UVB sensor electrically connected with the readout integrated circuit unit and formed on an insulating substrate, wherein the read-out integrated circuit converts a photocurrent input from the UV sensor into a digital signal including UV data.Type: GrantFiled: May 3, 2016Date of Patent: June 18, 2019Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ki Yon Park, Choong Min Lee, Hwa Mok Kim, Soo Hyun Lee, Gun Woo Han
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Patent number: 10319882Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: GrantFiled: January 30, 2018Date of Patent: June 11, 2019Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Patent number: 10043943Abstract: Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.Type: GrantFiled: March 29, 2016Date of Patent: August 7, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Ki Yon Park, Jeong Hun Heo, Yu Dae Han, Gun Woo Han
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Publication number: 20180175245Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: ApplicationFiled: January 30, 2018Publication date: June 21, 2018Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Publication number: 20180172506Abstract: Disclosed are an ultraviolet measuring device, a photodetector, an ultraviolet detector, an ultraviolet index calculation device, and an electronic device or portable terminal including the same. In one aspect, an ultraviolet measuring is provided to comprise: a substrate on which an electrode is formed; a readout integrated circuit (ROTC) unit electrically connected with the electrode; and an aluminum gallium nitride (AlGaN) based UVB sensor electrically connected with the readout integrated circuit unit and formed on an insulating substrate, wherein the read-out integrated circuit converts a photocurrent input from the UV sensor into a digital signal including UV data.Type: ApplicationFiled: May 3, 2016Publication date: June 21, 2018Inventors: Ki Yon Park, Choong Min Lee, Hwa Mok Kim, Soo Hyun Lee, Gun Woo Han
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Publication number: 20180122970Abstract: Disclosed herein is a light detection device. The light detection device includes a base layer, an electrostatic discharge (ESD) prevention layer disposed on the base layer and including an undoped nitride-based semiconductor, a light absorption layer disposed on the ESD prevention layer, a Schottky junction layer disposed on the light absorption layer, and a first electrode and a second electrode electrically connected to the Schottky junction layer and the base layer, respectively, wherein the ESD prevention layer has a lower average n-type dopant concentration than the base layer.Type: ApplicationFiled: May 11, 2016Publication date: May 3, 2018Inventors: Ki Yon Park, Gun Woo Han, Choong Min Lee, Soo Hyun Lee
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Publication number: 20180090641Abstract: Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.Type: ApplicationFiled: March 29, 2016Publication date: March 29, 2018Inventors: Ki Yon Park, Jeong Hun Heo, Yu Dae Han, Gun Woo Han
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Patent number: 9905732Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: GrantFiled: October 14, 2016Date of Patent: February 27, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Publication number: 20170033263Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: ApplicationFiled: October 14, 2016Publication date: February 2, 2017Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Patent number: 9496455Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: GrantFiled: July 27, 2015Date of Patent: November 15, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han
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Publication number: 20160027964Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.Type: ApplicationFiled: July 27, 2015Publication date: January 28, 2016Inventors: Ki Yon Park, Jeong Hun Heo, Hwa Mok Kim, Gun Woo Han