Patents by Inventor Gun-wu JU

Gun-wu JU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optical device including three-coupled quantum well structure having multi-energy level
    Patent number: 9190545
    Abstract: An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: November 17, 2015
    Assignees: SAMSUNG ELECTRONICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Yong-chul Cho, Yong-tak Lee, Chang-young Park, Byung-hoon Na, Yong-hwa Park, Gun-wu Ju
  • Optical device including three coupled quantum well structure
    Patent number: 9082909
    Abstract: Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: July 14, 2015
    Assignees: SAMSUNG ELECTRONICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Yong-chul Cho, Yong-tak Lee, Chang-young Park, Byung-hoon Na, Yong-hwa Park, Gun-wu Ju, Hee-ju Chio
  • Transmissive image modulator including stacked diode structure having multi absorption modes
    Patent number: 9051178
    Abstract: A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: June 9, 2015
    Assignees: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-chul Cho, Yong-tak Lee, Jang-woo You, Byung-hoon Na, Yong-hwa Park, Chang-young Park, Hee-ju Chio, Gun-wu Ju
  • OPTICAL DEVICE INCLUDING THREE-COUPLED QUANTUM WELL STRUCTURE HAVING MULTI-ENERGY LEVEL
    Publication number: 20150123077
    Abstract: An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.
    Type: Application
    Filed: May 21, 2014
    Publication date: May 7, 2015
    Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-chul CHO, Yong-tak LEE, Chang-young PARK, Byung-hoon NA, Yong-hwa PARK, Gun-wu JU
  • OPTICAL DEVICE INCLUDING THREE COUPLED QUANTUM WELL STRUCTURE
    Publication number: 20140191196
    Abstract: Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.
    Type: Application
    Filed: January 6, 2014
    Publication date: July 10, 2014
    Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-chul CHO, Yong-tak LEE, Chang-young PARK, Byung-hoon NA, Yong-hwa PARK, Gun-wu JU, Hee-ju CHIO
  • TRANSMISSIVE IMAGE MODULATOR INCLUDING STACKED DIODE STRUCTURE HAVING MULTI ABSORPTION MODES
    Publication number: 20130175500
    Abstract: A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.
    Type: Application
    Filed: September 14, 2012
    Publication date: July 11, 2013
    Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-chul CHO, Yong-tak LEE, Jang-woo YOU, Byung-hoon NA, Yong-hwa PARK, Chang-young PARK, Hee-ju CHIO, Gun-wu JU