Abstract: The present invention relates in one aspect to a semiconductor device (10), comprising a substrate (11), a photonic semiconductor layer (12), a first insulator layer (13) above the photonic semiconductor layer (12), and a lens layer (14) on top of the first insulator layer (13). A method for fabricating the semiconductor device is also disclosed. The method comprises the steps of forming a substrate, forming a photonic semiconductor layer on the substrate, forming a first insulator layer above the photonic semiconductor layer, and forming a lens layer on top of the insulator layer.

Abstract: The present invention relates to a semiconductor device (10), comprising a substrate (11), a semiconductor layer (12), a stressor layer (13), an insulator barrier (14) and a plurality of electrical connectors. The semiconductor layer (12) is sandwiched between the substrate (11) and the stressor layer (13). The stressor layer (13) is on top of the semiconductor layer (12) and is capable of inducing strain on the semiconductor layer (12). A method for fabricating a semiconductor device comprises the steps of forming a substrate (110), epitaxially growing a semiconductor layer on the substrate (120), depositing a stressor layer on the semiconductor layer (130) and forming a plurality of electrical connectors (140), wherein the electrical connectors are capable of electrically connecting the semiconductor device to an external circuit.