Patents by Inventor Gundolf Wenger

Gundolf Wenger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the in-situ fabrication of DFB lasers
    Patent number: 6794209
    Abstract: The invention relates to a method for fabricating a structure in a semiconductor material. At least one etching step is carried out in-situ in an epitaxy installation and tertiary butyl chloride is used as the etchant. The at least one etching step produces at least one grating structure of a DFB laser. This provides an efficient method for fabricating DFB lasers.
    Type: Grant
    Filed: July 1, 2002
    Date of Patent: September 21, 2004
    Assignee: Infineon Technologies AG
    Inventors: Horst Baumeister, Roland Gessner, Eberhard Veuhoff, Gundolf Wenger
  • Masking method for producing semiconductor components, particularly a BH laser diode
    Patent number: 6699778
    Abstract: A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: March 2, 2004
    Assignee: Infineon Technologies AG
    Inventors: Bernd Borchert, Horst Baumeister, Roland Gessner, Eberhard Veuhoff, Gundolf Wenger
  • In-situ mask technique for producing III-V semiconductor components
    Patent number: 6599843
    Abstract: Method of producing a structure for III-V semiconductor components in which a mask is applied to a sample in a masking step, characterized in that at least one mask material is a monocrystalline III-V semiconductor material. This makes possible an easy in-situ removal of the mask from the semiconductor material, which in turn makes possible the growing of additional layers.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: July 29, 2003
    Assignee: Infineon Technologies AG
    Inventors: Horst Baumeister, Roland Gessner, Eberhard Veuhoff, Gundolf Wenger
  • Method for the in-situ fabrication of DFB lasers
    Publication number: 20030003615
    Abstract: The invention relates to a method for fabricating a structure in a semiconductor material. At least one etching step is carried out in-situ in an epitaxy installation and tertiary butyl chloride is used as the etchant. The at least one etching step produces at least one grating structure of a DFB laser. This provides an efficient method for fabricating DFB lasers.
    Type: Application
    Filed: July 1, 2002
    Publication date: January 2, 2003
    Inventors: Horst Baumeister, Roland Gessner, Eberhard Veuhoff, Gundolf Wenger
  • Masking method for producing semiconductor components, particularly a BH laser diode
    Publication number: 20020182879
    Abstract: A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.
    Type: Application
    Filed: January 18, 2002
    Publication date: December 5, 2002
    Inventors: Bernd Borchert, Horst Baumeister, Roland Gessner, Eberhard Veuhoff, Gundolf Wenger
  • In-situ mask technique for producing III-V semiconductor components
    Publication number: 20020182873
    Abstract: Method of producing a structure for III-V semiconductor components in which a mask is applied to a sample in a masking step, characterized in that at least one mask material is a monocrystalline III-V semiconductor material. This makes possible an easy in-situ removal of the mask from the semiconductor material, which in turn makes possible the growing of additional layers.
    Type: Application
    Filed: May 29, 2001
    Publication date: December 5, 2002
    Inventors: Horst Baumeister, Roland Gessner, Eberhard Veuhoff, Gundolf Wenger