Abstract: A laser processing head can be used for joining (e.g., welding, brazing, soldering, etc.) workpieces. A collimator collimates laser light, which passes to a beam splitter. The beam splitter has anti-reflective and high-reflective coatings on peripheral and inner areas of the beam splitter. The beam splitter splits the collimated light into central or inner light from the inner area and peripheral light from the peripheral area. A main output in communication with the beam splitter directs at least the peripheral light into a main beam toward the workpieces. For example, a cable can feed a brazing wire adjacent the main beam for brazing the workpieces together. Meanwhile, a secondary output in communication with the beam splitter directs at least the central light into a secondary beam, which can be used to pre-heat the workpiece, post-heat the workpiece, or remove any surface coating from the workpiece.

Abstract: A sensor arrangement/evaluation which allows piercing detection within a fiber optic cable connector by means of two photodetectors independent of power, pulse frequency and pulse length.

Abstract: A laser material processing head, such as a remote welding head, has an output with a protective optic configured to pass an emitted laser to a working area. The protective optic, such as a cover slide of the output, protects other optics inside the head and is a replaceable, spare part. To prevent at least some debris expelled from the working area from reaching the protective optic, a nozzle is mounted to the head adjacent to the protective optic. The nozzle has an inlet and an outlet for the gas. The outlet has a curvilinear profile configured to fan a cross-jet of the gas in the plane between the protective optic and the working area. The profile of the nozzle reduces the amount of gas needed to divert the debris from the protective optic.

Abstract: A sensor arrangement/evaluation which allows piercing detection within a fiber optic cable connector by means of two photodetectors independent of power, pulse frequency and pulse length.

Abstract: A protective conduit for high power laser applications in light guide cables and provides a protective conduit that surrounds a light guiding fiber for high-power laser applications in light guide cables, wherein the protective conduit includes at least one plastic laser safety layer filled with at least one allotrope of carbon or filled with cork, chipped wood, wood, or wood powder, wood particles.

Abstract: A solar cell with a heterojunction is produced. A first amorphous nano- and/or microcrystalline semiconductor layer is formed on the front face of a crystalline semiconductor substrate to form front face emitter or a front face surface field layer. A second such layer is formed on the rear face of the substrate to form a rear face surface field layer or a rear face emitter. Electrically conductive, transparent front face and rear face electrode layers and a frontal metallic contact layer grid structure are formed. Surface selective frontal PECVD deposition forms an electrically non-conductive, transparent dielectric front face cover layer and with such a thickness to form a closed layer directly on deposition, without additional heat and/or chemical treatment, only on the areas surrounding the frontal contact layer grid structure but not on the frontal contact layer grid structure. Finally, a rear face metallization is formed.

Abstract: A protective conduit for high power laser applications in light guide cables and provides a protective conduit that surrounds a light guiding fiber for high-power laser applications in light guide cables, wherein the protective conduit includes at least one plastic laser safety layer filled with at least one allotrope of carbon or filled with cork, chipped wood, wood, or wood powder, wood particles.

Abstract: A sensor arrangement/evaluation which allows piercing detection within a fiber optic cable connector by means of two photodetectors independent of power, pulse frequency and pulse length.

Abstract: A solar cell with a heterojunction is produced. A first amorphous nano- and/or microcrystalline semiconductor layer is formed on the front face of a crystalline semiconductor substrate to form front face emitter or a front face surface field layer. A second such layer is formed on the rear face of the substrate to form a rear face surface field layer or a rear face emitter. Electrically conductive, transparent front face and rear face electrode layers and a frontal metallic contact layer grid structure are formed. Surface selective frontal PECVD deposition forms an electrically non-conductive, transparent dielectric front face cover layer and with such a thickness to form a closed layer directly on deposition, without additional heat and/or chemical treatment, only on the areas surrounding the frontal contact layer grid structure but not on the frontal contact layer grid structure. Finally, a rear face metallization is formed.