Abstract: A III-V-, IV-IV- or II-VI-compound single crystal comprising III-, IV- or II-precipitates and/or unstoichiometrical III-V-, IV-VI-, or II-VI-inclusions, wherein concentration of the respective precipitates and/or inclusions is no more than 1×104 cm?3

Abstract: A III-V-, IV-IV- or II-VI-compound single crystal comprising III-, IV- or II-precipitates and/or unstoichiometrical III-V-, IV-VI-, or II-VI-inclusions, wherein concentration of the respective precipitates and/or inclusions is no more than 1×104 cm?3

Abstract: The present invention relates to a process for the production of III-V-, IV-IV- or II-VI-compound semiconductor crystals. The process starts with providing of a substrate with optionally one crystal layer (buffer layer). Subsequently, a gas phase is provided, which comprises at least two reactants of the elements of the compound semiconductor (II, III, IV, V, VI) which are gaseous at a reaction temperature in the crystal growth reactor and can react with each other at the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, wherein the concentration is selected that high, that crystal formation is possible, wherein by an adding or adjusting of reducing agent and of co-reactant, the activity of the III-, IV- or II-compound in the gas phase is decreased, so that the growth rate of the crystals is lower compared to a state without co-reactant.

Abstract: The present invention relates to a process for the production of III-V-, IV-IV- or II-VI-compound semiconductor crystals. The process starts with providing of a substrate with optionally one crystal layer (buffer layer). Subsequently, a gas phase is provided, which comprises at least two reactants of the elements of the compound semiconductor (II, III, IV, V, VI) which are gaseous at a reaction temperature in the crystal growth reactor and can react with each other at the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, wherein the concentration is selected that high, that crystal formation is possible, wherein by an adding or adjusting of reducing agent and of co-reactant, the activity of the III-, IV- or II-compound in the gas phase is decreased, so that the growth rate of the crystals is lower compared to a state without co-reactant.

Abstract: A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapor phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.

Abstract: A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.

Abstract: A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapor phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.

Abstract: A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.

Abstract: A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.

Abstract: A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al, Ga and In, utilizes a smoothening agent comprising cubic boron nitride abrasive particles. The process provides large-sized III-N substrates or III-N templates having diameters of at least 40 mm, at a homogeneity of very low surface roughness over the whole substrate or wafer surface. In a mapping of the wafer surface with a white light interferometer, the standard deviation of the rms-values is 5% or lower, with a very good crystal quality at the surface or in surface-near regions, measurable, e.g., by means of rocking curve mappings and/or micro-Raman mappings.

Abstract: A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapour phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.

Abstract: Embodiments of the invention relate to a process for producing a III-N bulk crystal, wherein III denotes at least one element selected from group III of the periodic system, selected from Al, Ga and In, wherein the III-N bulk crystal is grown by vapor phase epitaxy on a substrate, and wherein the growth rate is measured in real-time. By actively measuring and controlling the growth rate in situ, i.e. during the epitaxial growth, the actual growth rate can be maintained essentially constant. In this manner, III-N bulk crystals and individualized III-N single crystal substrates separated therefrom, which respectively have excellent crystal quality both in the growth direction and in the growth plane perpendicular thereto, can be obtained.

Abstract: A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al, Ga and In, utilizes a smoothening agent comprising cubic boron nitride abrasive particles. The process provides large-sized III-N substrates or III-N templates having diameters of at least 40 mm, at a homogeneity of very low surface roughness over the whole substrate or wafer surface. In a mapping of the wafer surface with a white light interferometer, the standard deviation of the rms-values is 5% or lower, with a very good crystal quality at the surface or in surface-near regions, measurable, e.g., by means of rocking curve mappings and/or micro-Raman mappings.

Abstract: A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al, Ga and In, utilizes a smoothening agent comprising cubic boron nitride abrasive particles. The process provides large-sized III-N substrates or III-N templates having diameters of at least 40 mm, at a homogeneity of very low surface roughness over the whole substrate or wafer surface. In a mapping of the wafer surface with a white light interferometer, the standard deviation of the rms-values is 5% or lower, with a very good crystal quality at the surface or in surface-near regions, measurable, e.g., by means of rocking curve mappings and/or micro-Raman mappings.

Abstract: A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapour phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.

Abstract: The present invention relates to a novel process for producing (Al, Ga)N and AlGaN single crystals by means of a modified HVPE process, and also to (Al, Ga)N and AlGaN single crystals of high quality. The III-V compound semiconductors produced by the process according to the invention are used in optoelectronics, in particular for blue, white and green LEDs and also for high-power, high-temperature and high-frequency field effect transistors.

Abstract: The present invention relates to a novel process for producing (Al, Ga)InN and AlGaInN single crystals by means of a modified HVPE process, and also to (Al, Ga)InN and AlGaInN bulk crystals of high quality, in particular homogeneity. The III-V compound semiconductors produced by the process according to the invention are used in optoelectronics, in particular for blue, white and green LEDs and also for high-power, high-temperature and high-frequency field effect transistors.

Abstract: A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.

Abstract: A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al, Ga and In, utilizes a smoothening agent comprising cubic boron nitride abrasive particles. The process provides large-sized III-N substrates or III-N templates having diameters of at least 40 mm, at a homogeneity of very low surface roughness over the whole substrate or wafer surface. In a mapping of the wafer surface with a white light interferometer, the standard deviation of the rms-values is 5% or lower, with a very good crystal quality at the surface or in surface-near regions, measurable, e.g., by means of rocking curve mappings and/or micro-Raman mappings.

Abstract: Embodiments of the invention relate to a process for producing a III-N bulk crystal, wherein III denotes at least one element selected from group III of the periodic system, selected from Al, Ga and In, wherein the III-N bulk crystal is grown by vapor phase epitaxy on a substrate, and wherein the growth rate is measured in real-time. By actively measuring and controlling the growth rate in situ, i.e. during the epitaxial growth, the actual growth rate can be maintained essentially constant. In this manner, III-N bulk crystals and individualized III-N single crystal substrates separated therefrom, which respectively have excellent crystal quality both in the growth direction and in the growth plane perpendicular thereto, can be obtained.