Abstract: A power thyristor assembly, includes an insulating and metallized substrate, and a power thyristor having a cathode and gate side facing toward and soldered to the substrate, and an anode side facing away from the substrate, the anode side having an anode and a passivation ditch surrounding the anode, the anode side including a reverse junction, the cathode and gate side including a blocking pn-junction, and the passivation ditch being common to the anode side reverse junction and to the cathode and gate side blocking pn-junction.

Abstract: A method of fabricating semiconductor components having electrodes and terminals. The method includes preparing an undivided semiconductor wafer having at least one pn-junction; etching a grid pattern of grooves into at least one side of the undivided wafer, thereby forming mesas with concave side surfaces and elevations with upper surfaces bounded by closed rounded curves; coating the exposed lateral surfaces of the etched mesas with a passivating layer; metallizing the upper surfaces of these elevations, thereby providing ohmic contacts for the undivided semiconductor wafer; and breaking the undivided semiconductor wafer into individual semiconductor chips along the lines of the etched grooves.

Abstract: A controllable semiconductor component for two current directions comprising a semiconductor wafer having a middle zone of a first conductivity type extending throughout the wafer plane, an upper zone of a second conductivity type adjoining the middle zone from above, a lower zone of the second conductivity type adjoining the middle zone from below, a first main electrode zone of the first conductivity type adjoining a first partial zone on the upper side of the upper zone, a second main electrode zone of the first conductivity type adjoining a first partial zone on the underside of the lower zone, a first control-electrode zone of the second conductivity type on the upper side of the upper zone and at a lateral distance from the first main electrode zone, a second control-electrode zone of the first conductivity type on the upper side of the upper zone and at a distance from the first main-electrode zone and a notch between the control-electrode zones which extends laterally partway between the first partial

Abstract: A two-way semiconductor switch, commonly known as a Triac comprises a semiconductor body having at least five superposed zones alternating in conductivity types, the three inner zones forming the basic interior structure and the outer zones, each of different conductivity types, located at the opposite end faces of the semiconductor body forming the emitter or anode boundary zones respectively, and having a main electrode in ohmic contact therewith. One end face also includes first and second control zones of different conductivity types spaced laterally from the outer zones of different conductivity types at that end and in ohmic contact with a control electrode common to both control zones.