Abstract: The invention relates to methods and devices for producing one or more low-particle layers on substrates in a vacuum. The layers are deposited onto the substrate from a cylindrical source material, optionally together with a reactive gas component, by means of magnetron sputtering. The layer is deposited against the force of gravity in a sputter-up method. During the method or within the device, the structure or stochiometric atomic composition of the layers can optionally be modified using a plasma source. Multiple sputtering sources with different source materials can be provided in the device such that multiple layers of different compositions can be applied on the substrate at a high speed in one process.

Abstract: The invention relates to methods and devices for producing one or more low-particle layers on substrates in a vacuum. The layers are deposited onto the substrate from a cylindrical source material, optionally together with a reactive gas component, by means of magnetron sputtering. The layer is deposited against the force of gravity in a sputter-up method. During the method or within the device, the structure or stochiometric atomic composition of the layers can optionally be modified using a plasma source. Multiple sputtering sources with different source materials can be provided in the device such that multiple layers of different compositions can be applied on the substrate at a high speed in one process.

Abstract: A process is provided for sputter-induced precipitation of metal oxide layers on substrates by means of a reactive sputter process. The plasma charge acting upon the target to be evaporated is provided with electric power selected such that the metal oxide layers precipitated on the substrates to be coated are deposited at a precipitation rate of ≧4 nm/s. During the coating process the substrate to be coated is arranged stationary in relation to the target material to be evaporated. The electrodes are connected in a conductive manner to the outputs of an alternating current source whereby the alternating frequency of the alternating current provided for the electrical supply of the plasma discharge is selected between 10 kHz and 80 kHz. Particularly preferred is that the precipitated oxide layer is a TiO2 layer or an SiO2 layer.

Abstract: A process is provided for sputter-induced precipitation of metal oxide layers on substrates by means of a reactive sputter process. The plasma charge acting upon the target to be evaporated is provided with electric power selected such that the metal oxide layers precipitated on the substrates to be coated are deposited at a precipitation rate of ≧4 nm/s. During the coating process the substrate to be coated is arranged stationary in relation to the target material to be evaporated. The electrodes are connected in a conductive manner to the outputs of an alternating current source whereby the alternating frequency of the alternating current provided for the electrical supply of the plasma discharge is selected between 10 kHz and 80 kHz. Particularly preferred is that the precipitated oxide layer is a TiO2 layer or an SiO2 layer.

Abstract: A process is provided for sputter-induced precipitation of metal oxide layers on substrates by means of a reactive sputter process. The plasma charge acting upon the target to be evaporated is provided with electric power selected such that the metal oxide layers precipitated on the substrates to be coated are deposited at a precipitation rate of ≧4 nm/s. During the coating process the substrate to be coated is arranged stationary in relation to the target material to be evaporated. The electrodes are connected in a conductive manner to the outputs of an alternating current source whereby the alternating frequency of the alternating current provided for the electrical supply of the plasma discharge is selected between 10 kHz and 80 kHz. Particularly preferred is that the precipitated oxide layer is a TiO2 layer or an SiO2 layer.

Abstract: A process is provided for sputter-induced precipitation of metal oxide layers on substrates by means of a reactive sputter process. The plasma charge acting upon the target to be evaporated is provided with electric power selected such that the metal oxide layers precipitated on the substrates to be coated are deposited at a precipitation rate of ≧4 nm/s. During the coating process the substrate to be coated is arranged stationary in relation to the target material to be evaporated. The electrodes are connected in a conductive manner to the outputs of an alternating current source whereby the alternating frequency of the alternating current provided for the electrical supply of the plasma discharge is selected between 10 kHz and 80 kHz. Particularly preferred is that the precipitated oxide layer is a TiO2 layer or an SiO2 layer.

Abstract: In an apparatus for the coating of substrates in a vacuum with rotatable substrate carriers (15,16,20) and with a loading and an unloading station (8 or 9), two vacuum chambers (3,4) are provided with several coating stations (6,7 or 10 to 14), directly next to one another, wherein a rotatable transport arm (15 or 16) is accommodated in each of the two chambers (3, 4), and the transport planes of the two transport arms (15,16) are aligned with one another. In the separation area of the two chambers (3,4), an air lock is provided with a corresponding transfer apparatus (5) with two transport arms (15,16), whose rotary plate (20) is provided with substrate storage unit (21,22) and projects about halfway into one chamber (3) and halfway into the other chamber (4), wherein one chamber (3) has both the loading as well as the unloading station (8 or 9).

Abstract: In an apparatus for the deposition of polycrystalline diamond on large, flat substrates (3) by the plasma method, with a vacuum chamber (4); with locks for the inward and outward transfer of the substrates; with a device installed in the chamber (4) for conveying the substrates (3) through at least one, preferably through two treatment stations; with hot-filament sources (5, 5', . . . ) forming a first group, installed above the plane of the substrates; with microwave plasma sources (8, 8', . . . ) forming a second group; with an electrode (11) fed with radio frequency underneath the plane of the substrates for generating a bias voltage; and with gas feed pipes (6, 9) opening into the vacuum chamber (4), the hot-filament arrangements (5, 5', . . . ), designed as linear sources, are arranged transversely to the substrate transport direction (a) and form a first coating zone (Z.sup.1), where the microwave plasma sources (8, 8', . . .

Abstract: A vacuum chamber includes a central compartment (1) in which a diode cathode (6) carrying an electrically conductive sputtering target (7) is located, and two outer compartments (11, 12) in which magnetron cathodes (13, 14) carrying target 15, 16) are located, the magnetron cathodes (13, 14) being connected to respective poles (20, 21) of an AC power source. The outer compartments (11, 12) are separated from the central compartment by walls having openings (33, 34) which flank a space (28) between the sputtering target (6) and the substrate (3). Process gas lines 24, 25) are arranged to introduce process gas into this space (3).

Abstract: Pole shoes (3, 4, 5) of magnetically conductive material are provided inside of a first tubular target (2). Outside the target (2), a magnetic flux guide element (7) is provided, which has three pole shoes (8, 9, 10) directed toward the hollow body (1), which are connected to each other by magnets (12, 13). These magnets (12, 13) transmit the magnetic field through the target (2) to the pole shoes (3, 4, 5) inside the target (2) across narrow gaps (6, 11).

Abstract: A vacuum coating apparatus has a pot-like tank (2) against whose open side a portion of a substrate (1) can be held sealingly. In the tank (2) there is disposed a target (7). A shut-off plate (9) makes it possible after lowering the substrate (1) to hold this target (7) under vacuum in a source chamber (11) protected against intrusion of air.