Abstract: A power semiconductor circuit comprising a field effect transistor having a drain, a source and a gate as terminals, and further comprising a control device having a drive device and an undervoltage detection circuit. The drive device drives the field effect transistor and is electrically connected to the gate of the field effect transistor. The undervoltage detection circuit generates an undervoltage detection signal if a power semiconductor voltage present between the drain and the source of the field effect transistor falls below a specific voltage value. The drive device switches on the field effect transistor when a switch-on command for switching on the field effect transistor and the undervoltage detection signal are present. The invention provides a power semiconductor circuit with low energy loss.

Abstract: A control device for a power semiconductor switch includes an actuating device, which on a third control device terminal, upon the reception of a switching on command, generates an actuating voltage for the switching on of the power semiconductor switch and, upon the reception of an switching off command, generates an actuating voltage for the switching off of the power semiconductor switch, and a current detection circuit, which generates a first high-current signal if an actuating voltage assumes a voltage value at which the power semiconductor switch is switched on, and a primary voltage of the power semiconductor switch applied between first and second control device terminals exceeds a first power semiconductor switch primary voltage value.

Abstract: A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal.

Abstract: A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal.