Abstract: A method for structuring photoresists and a corresponding photolithography mask utilize a principal structure and an auxiliary structure. In addition to the principal structure to be imaged, the photomask has an imaging auxiliary structure, which improves the imaging of the principal structure. The portions of the imaging auxiliary structure in the photoresist are exposed in a second exposure step and thereby likewise changed into a form that is soluble in a developer. Only the principal structure remains on the substrate after development.

Abstract: The method enables determining imaging errors of photomasks for the lithographic structuring of semiconductors. A latent image of the mask is first produced in a photoactivatable layer by exposure. After heat treatment carried out for increasing the contrast and development of the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist, which leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The mask layout can be tested under production conditions and the adjustment and the checking of all components of the phototransfer system used for the production of microchips is facilitated.

Abstract: Imaging errors in optical exposure units for the lithographic structuring of semiconductors are determined. First, a latent image of a mask is first produced in a photoactivatable layer by exposure using the optical exposure unit to be tested. After heat treating for increasing the contrast and developing the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist. This leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The method permits testing of optical exposure units under production conditions and thus facilitates the adjustment and the checking of all components of the exposure system used for the production of microchips.

Abstract: Layers are patterned with a lithography method during the fabrication of integrated circuits. A mask, which may be reflective or transmissive, for carrying out the method. The photosensitive layers are exposed to radiation that is emitted by a radiation source. The radiation lies in the extreme ultraviolet region and is guided via the mask onto the photosensitive layers.

Abstract: The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.

Abstract: A method for structuring photoresists and a corresponding photolithography mask utilize a principal structure and an auxiliary structure. In addition to the principal structure to be imaged, the photomask has an imaging auxiliary structure, which improves the imaging of the principal structure. The portions of the imaging auxiliary structure in the photoresist are exposed in a second exposure step and thereby likewise changed into a form that is soluble in a developer. Only the principal structure remains on the substrate after development.

Abstract: Imaging errors in optical exposure units for the lithographic structuring of semiconductors are determined. First, a latent image of a mask is first produced in a photoactivatable layer by exposure using the optical exposure unit to be tested. After heat treating for increasing the contrast and developing the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist. This leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The method permits testing of optical exposure units under production conditions and thus facilitates the adjustment and the checking of all components of the exposure system used for the production of microchips.

Abstract: The method enables determining imaging errors of photomasks for the lithographic structuring of semiconductors. A latent image of the mask is first produced in a photoactivatable layer by exposure. After heat treatment carried out for increasing the contrast and development of the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist, which leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The mask layout can be tested under production conditions and the adjustment and the checking of all components of the phototransfer system used for the production of microchips is facilitated.

Abstract: The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.

Abstract: A thick layer formed of aSi or aSi/aSiN is used as an antireflection layer (3) in the lithographic structuring of layers (2) on a semiconductor substrate (1). A reflection suppression is based on absorption in the aSi layer and on interference in the aSiN layer. An optical decoupling of the background is achieved, with the result that the antireflection layer can be used universally.

Abstract: In the case of a hinge for the connecting of a temple shaft with a hinge piece of a spectacle frame, at least one hinge eye is located on only one of these elements (the hinge piece or the shaft of the temple). The hinge pin running through this eye is designed in one piece with the other element (the shaft of the temple or the hinge piece). For this purpose, either the hinge pin of plastic is injection molded into the opening of the hinge eye or the hinge eye of plastic is injection molded around the hinge pin. In this case, one preferably proceeds in such a manner that one of the two elements with the associated hinge eye or hinge pin is formed first and that this initially formed element forms a part of the surface of the cavity of the injection molding tool for the other element such that the other element is injection-molded directly onto the initially produced element.

Abstract: An object coated with plastic described, whereby the object consists of high-melting plastic onto which a coating is melted of plastic powder. The method is specifically concerned with coating spectacle frames with resin powder in a vortical sintering bath.

Abstract: This invention relates to spectacles in which are spectacle lens is connected to an individual component, for example a flange, by means of a fatening device. In the spectacle lens the two ends of a borehole are expanded into two borehole widenings which are engaged with a first protrusion on the flange and with a connecting element that is connected to a pin leading to the first protrusion. In addition, the flange has two further protrusions supporting themselves on the border of the spectacle lens, so that a four-point anchoring of the flange secured by the pin against pulling and by the additional protrusions against rotating is furnished on the spectacle lens and vice versa. A certain flange is suitable for given thicknesses and curvatures of the spectacle lens, because both on the front side and the back side of the spectacle lens it is not the front or back sides that define the gripping surfaces for the connecting element and first protrusion, but the borehole widening.