Patents by Inventor Gunther H. Schwuttke

Gunther H. Schwuttke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for controlled doping of silicon crystals by improved float zone technique
    Patent number: 4556448
    Abstract: An apparatus and method are described for incorporating doping material into a single silicon crystal by an improved float zone (FZ) crystal growth method. A solid fused silica doping rod is inserted into a floating zone of molten silicon in a controlled manner, preferably via a generally radial hole through a radio-frequency induction coil. Oxygen doping, in a concentration of 1-25 ppm, is achieved by using a fused silica doping rod. N- or p-type dopants may be contained in the silica rod as impurities to provide n- or p-type doping concurrently with the oxygen doping.
    Type: Grant
    Filed: October 19, 1983
    Date of Patent: December 3, 1985
    Assignee: International Business Machines Corporation
    Inventors: Kyong M. Kim, Pavel Smetana, Gunther H. Schwuttke