Abstract: A monolithically integrated semiconductor store is disclosed having a plurality of storage elements on a semiconductor layer with each storage element having a storage capacitor and a selector element. The selector element includes first and second transfer gates. The first transfer gate connects to a word decoder and the second transfer gate similarly connects to a word decoder at a different input. The source-drain path of the first transfer gate connects to the storage capacitor and the source-drain path of the second transfer gate connects to an evaluator and regenerator circuit via a bit line. With the integrated store disclosed, for a given number of storage elements, the bit lines are reduced to approximately half their length and the number of requisite word lines is reduced by half as compared to previous integrated stores.