Abstract: The optical recording medium (20) has a substrate (1) and a stack (2) of layers provided thereon. A phase change recording layer (5), having a melting point Tmp is sandwiched between a first (3) and a second (7) dielectric layer. A crystallization-accelerating layer (4, 6) is being interposed in contact with the recording layer (5). Further a reflective layer (8) is present and an optional cover layer (9).

Abstract: A rewritable optical information medium includes a substrate coated with two carbide layers, a phase-change recording layer between two carbide layers, and a light-absorptive layer of a material like Si, Ge, Mo, or W to slow the cooling when scanned with laser light so that the medium can be used for high data rate recording. The material is capable of a user data bit rate of 50 Mbit/s.

Abstract: A description is given of a rewritable optical information medium having an IPIAIM stack comprising a phase-change recording layer sandwiched between two dielectric layers, a light-absorbing layer of a material like Si, Ge, Mo, or W, a third dielectric layer, and a metal mirror layer. The light-absorbing layer reduces the difference in light absorption between the amorphous state and the crystalline state to a minimum, thus reducing the recording mark distortion. The presence of the light-absorbing layer in this position ensures that the optical phase difference between the amorphous and the crystalline state is almost zero, making the medium suitable for land-groove recording.

Abstract: A rewritable optical information medium has a phase-change recording layer on the basis of an alloy of Ge--Sb--Te, which composition is situated within the pentagonal area PQRST in a triangular ternary composition diagram. These alloys show a complete erase time of 50 ns or less. CET-values below 45 ns are obtained with alloys situated on the tie-line connecting Te and the compound GeSb.sub.2 Te.sub.4 within the area PQRST. Such a medium is suitable for high speed recording (i.e. at least six times the CD-speed), such as for DVD-RAM and optical tape.

Abstract: A rewritable optical information medium has a phase-change recording layer (3) on the basis of an alloy of Ge-Sb-Te-O, having the composition (Ge.sub.a Sb.sub.b Te.sub.c).sub.1-d O.sub.d, wherein:a+b+c=10.0001 a d a 0.035The addition of oxygen considerably speeds up the crystallization rate of Ge-Sb-Te materials. Such a medium is suitable for high speed recording (i.e. at least eight times the CD-speed), such as for DVD-RAM and optical tape. The amount of oxygen in the recording layer (3) can be used to tune the crystallization rate to the desired value.

Abstract: An optical recording medium has a phase-change recording layer embedded in a stack of thin layers arranged on a substrate. At least one of the dielectric layers adjacent to the recording layer comprises a carbide. The carbide layer is separated from the substrate and/or from a reflecting layer in the stack by a dielectric layer not containing a carbide. The thickness of the carbide layer either lies in a range from 2 to 8 nm or is substantially equal to the thickness of the adjacent dielectric layer.

Abstract: A description is given of an reversible optical information medium comprising a substrate, a first dielectric layer, a phase-change recording layer on the basis of Ge--Sb--Te, a second dielectric layer, and a metal mirror layer. The recording layer comprises an alloy having the composition Ge.sub.50x Sb.sub.40-40x Te.sub.60-10x in atom %, wherein0.166.ltoreq.x.ltoreq.0.444and wherein the layer thickness d.sub.3 of said recording layer ranges between 25 and 35 nm. Such a medium is suitable for high speed recording (i.e. at least twice the CD-speed), and has a large cyclability of at least 10.sup.5 direct overwrite cycles.