Abstract: Disclosed are flexible glass and a preparation method therefor; weight proportions of the raw materials used in the flexible glass are: 60.04-63.01 parts silicon dioxide, 16.7-21.5 parts aluminum oxide, 12.93-19.85 parts boron oxide, 2.43-14.19 parts calcium carbonate, 0.16-2.07 parts magnesium oxide. 0.5-2.74 parts strontium carbonate and 0-4.16 parts barium nitrate. The method includes: step 1: pouring raw materials into a mixer, and uniformly mixing to form a mixture; step 2: adding the mixture into a glass furnace, heating to melt the glass, and the melted glass entering a platinum feeding channel for clarification and flowing into a tube drawing tunnel; step 3: drawing the liquid glass into a long glass tube; step 4: using a laser cutting machine to transversely and longitudinally cut the glass tube according to specification requirements, forming a glass sheet; step 5: inspecting the glass sheet, and preparing a flexible glass product.

Abstract: Disclosed are electronic glass having high liquidus viscosity and a preparation method. The proportions of the raw materials used in the electronic glass are: SiO2: 65.56-68.6%; Al2O3: 10.58-14%; B2O3: 7-11%; SrO: 0.27-3.26%; BaO: 7.20-10.12%; CaO: 0.22-1.22%; MgO: 0-1.05%; MgO+CaO+SrO+BaO<13%; and the liquidus viscosity of the electronic glass is greater than 200,000 poise. The minimum value of the temperature corresponding to a liquidus temperature reduction of 100,000 poise in the electronic glass is 22° C. The electronic glass has a strain point temperature of 670-739° C., a Young's modulus of 70-83 GPa, and a density of 2.38-2.45 g/cm3, the liquidus viscosity is ensured to be higher than 200,000 poise, the electronic glass is well suited to overflow downdraw forming, and a relatively low density value can be obtained.

Abstract: The disclosure is directed to a polyclonal antibody composition comprising a heterologous population of mammalian antibodies capable of specifically binding to tenofovir or a tenofovir derivative in a sample. Methods and assays for detecting tenofovir or a tenofovir derivative in a sample using the polyclonal antibody composition also are provided.

Abstract: A semiconductor light emitting diode chip relates to the field of production technologies of a light emitting diode. In the present invention, corresponding graphical current extension layers are respectively disposed below an N pad and a P pad, and in all light emitting compound areas, there is electronic compound light emitting. Compared with the prior art, an area of a light emitting compound area is increased, which can effectively improve current distribution and light emitting brightness of a chip. In addition, graphical current extension can effectively increase an adhesion of a pad on a surface and improve the reliability of a chip.

Abstract: A semiconductor light emitting diode chip relates to the field of production technologies of a light emitting diode. In the present invention, corresponding graphical current extension layers are respectively disposed below an N pad and a P pad, and in all light emitting compound areas, there is electronic compound light emitting. Compared with the prior art, an area of a light emitting compound area is increased, which can effectively improve current distribution and light emitting brightness of a chip. In addition, graphical current extension can effectively increase an adhesion of a pad on a surface and improve the reliability of a chip.

Abstract: The present invention discloses A graphene film electrical current spreading layer applied GaN-based LED in vertical. structure, comprising: a p-type metal electrode including a metal support substrate and a metal reflective mirror formed on the metal support substrate; a hole injecting layer formed on the metal reflective mirror of the p-type metal electrode; an electron blocking layer formed on the hole injecting layer; a lighting layer formed on the electron blocking layer; an electron limiting layer formed on the lighting layer; an electron injecting layer formed on the electron limiting layer; an electrical current spreading layer formed on the electron injecting layer; two n-type metal electrodes formed on the electrical spreading layer and covering a part of the electrical current spreading layer.

Abstract: Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completin

Abstract: Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completin

Abstract: This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiO2 insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the fac

Abstract: This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiO2 insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the fac

Abstract: In this disclosure, novel caanabinol-based tracers suitable for use in immunoassays that detect cannabinoids in a biological sample are disclosed. These cannabinol-based tracers are particularly useful in a continuous flow displacement immunoassay. The disclosure also describes the processes for synthesizing the novel tracers, and the application of these tracers in fluorescence immunoassays for detecting and quantifying cannabinoids in biological samples.

Abstract: This invention relates to novel tracers and their synthesis and use in an immunoassay for the detection of controlled drugs such as amphetamine (APM), methamphetamine (MAPM) and their derivatives, in a biological or aqueous sample. In particular, this invention provides methods for synthesizing novel tracers in which a non-controlled substance is both the starting material in tracer synthesis and the binding site on the resulting novel tracer for the antibody, thereby eliminating the necessity of using controlled substances as starting materials. In addition, the novel tracers of the present invention can be used as an analyte analog in an immunoassay, such as a continuous flow displacement immunoassay. It was unexpectedly discovered that the novel tracers of the present invention substantially improve the performance of the continuous flow displacement immunoassay as compared with conventionally designed tracers.

Abstract: In this disclosure, novel caanabinol-based tracers suitable for use in immunoassays that detect cannabinoids in a biological sample are disclosed. These cannabinol-based tracers are particularly useful in a continuous flow displacement immunoassay. The disclosure also describes the processes for synthesizing the novel tracers, and the application of these tracers in fluorescence immunoassays for detecting and quantifying cannabinoids in biological samples.

Abstract: This invention relates to novel tracers and their synthesis and use in an immunoassay for the detection of controlled drugs such as amphetamine (APM), methamphetamine (MAPM) and their derivatives, in a biological or aqueous sample. In particular, this invention provides methods for synthesizing novel tracers in which a non-controlled substance is both the starting material in tracer synthesis and the binding site on the resulting novel tracer for the antibody, thereby eliminating the necessity of using controlled substances as starting materials. In addition, the novel tracers of the present invention can be used as an analyte analog in an immunoassay, such as a continuous flow displacement immunoassay. It was unexpectedly discovered that the novel tracers of the present invention substantially improve the performance of the continuous flow displacement immunoassay as compared with conventionally designed tracers.