Abstract: There is provided a method of introducing impurity capable of efficiently realizing a shallow impurity introduction. The impurity introducing method includes a first step of making a surface of a semiconductor layer to be amorphous by reacting plasma composed of particles which are electrically inactive in the semiconductor layer to a surface of a solid base body including the semiconductor layer, and a second step of introducing impurity to the surface of the solid base body. After performing the first step, by performing the second step, an amorphous layer with fine pores is formed on the surface of the solid base body including the semiconductor layer, and impurity are introduced in the amorphous layer to form an impurity introducing layer.

Abstract: A subject of the present invention is to realize an impurity doping not to bring about a rise of a substrate temperature. Another subject of the present invention is to measure optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized. An impurity doping method, includes a step of doping an impurity into a surface of a solid state base body, a step of measuring an optical characteristic of an area into which the impurity is doped, a step of selecting annealing conditions based on a measurement result to meet the optical characteristic of the area into which the impurity is doped, and a step of annealing the area into which the impurity is doped, based on the selected annealing conditions.

Abstract: It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Abstract: To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus. At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.

Abstract: An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction.

Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Abstract: The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.

Abstract: A fill-port sealing assembly for sealing a housing, such as a hermetically sealed housing of a data storage device. A fill port body extends through an opening in a substrate and has a central bore communicating between a first side and a second side of the substrate. A compression member threadingly engages the central bore to compress an annular seal member and seal against passage of a low density gas through the central bore.

Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Abstract: An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.

Abstract: An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction.

Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Abstract: A system (10) for recognizing handwriting includes an input/output device (12) and a second computer (24 or 28). The system (10) converts handwritten symbols to text by using a grammar (50) that is comprised of the text (60) that is expected to be entered into a text display/text input area (17) of an input/output device (12). The grammar (50) and handwriting-to-text conversion can be performed in either the input/output device (12) or a remote computer (24, 28).

Abstract: A data entry device having an integral input element capable of recording input movement in two dimensions (including Chinese strokes and characters, Roman letters and Arabic numerals) and delivering resultant signals to a processor. The processor is programmed for identifying a handwriting input represented by the signals.

Abstract: A data entry device (10) having an integral input element (12) capable of recording input movement in two dimensions (including Chinese strokes and characters, Roman letters and Arabic numerals) and delivering resultant signals to a processor (11). The processor (11) is programmed for identifying a handwriting input represented by the signals. The apparatus includes an array of switching elements (20) capable of recording input movement between at least four discrete points arranged in two dimensions and providing a series of discrete input. An electronic display (13) is provided for displaying a first subset of two-dimensional information, while a memory (15) is provided for storing a larger second two-dimensional information set. The memory (15) has storage capacity for the second two-dimensional information of a size greater than the first two-dimensional information capable of being displayed on the electronic display (13).

Abstract: A voice input representing a first phonetic component of a data element is accepted through an audio input (10). A mechanical input representing at least one writing component of the data element, such as a stroke or character, is accepted through a mechanical input device (15), such as a digitizer, keypad, or other means. A desired data element is identified from the voice input and the at least one writing component.

Abstract: A microprocessor 11 receives an ambiguous input from a key 2-9 and disambiguates the ambiguous input using a dictionary. The dictionary is stored in an efficient manner by being partitioned according to the first three letters of a word. A sequence of three letters in the dictionary is stored as eight bits of data, the first three letters of a word being stored using three pairs of bits, such that each pair of bits represents one of no more than four alternative letters.