Patents by Inventor Guo Neng Lu

Guo Neng Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210364660
    Abstract: A multilayer scintillation detector, includes at least three layers superposed on one another, and each extending parallel to a plane, called the detection plane, wherein each layer is formed by a first material, called a scintillation material, capable of interacting with an ionizing radiation and of forming, following the interaction, a scintillation light in a scintillation spectral band; each layer has a plurality of light guides, respectively extending parallel to the detection plane, according to a length, the light guides being disposed, over all or part of their length, parallel to an axis of orientation; the axis of orientation of the light guides of each layer is oriented, in the detection plane, according to an orientation, the orientations of the respective axes of orientation of at least three layers being different from one another, such that each layer has an associated orientation; and the scintillation material has a first refractive index.
    Type: Application
    Filed: March 20, 2019
    Publication date: November 25, 2021
    Applicants: UNIVERSITE CLAUDE BERNARD LYON 1, INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, HOSPICES CIVILS DE LYON, CPE LYON FORMATION CONTINUE ET RECHERCHE, ECOLE CENTRALE DE LYON
    Inventors: Patrick PITTET, Guo-Neng LU, Patrice JALADE, Jean-Marc GALVAN
  • Publication number: 20190257962
    Abstract: The invention relates to a method for characterising the quality of an X-ray beam having a known profile for depositing a dose in a body, having an zone (Za1, Za2) of increasing dose rate inside said body extending between the input surface of the beam and a characteristic depth (Pmax) where the deposited dose is at a maximum, the method comprising the following steps: —providing a monolithic detector including in p-n junctions (m>3) stacked depth-wise in the detector with at least three junctions distributed in the zone of increasing dose rate; —projecting said X-ray beam onto the monolithic detector; —recovering the m signals (r) delivered by the p-n junctions of the detector; —and processing the m signals (r) in order to characterise the quality of the X-ray beam.
    Type: Application
    Filed: June 16, 2017
    Publication date: August 22, 2019
    Applicants: Universite Claude Bernard Lyon 1, Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquees de Lyon, Ecole Centrale De Lyon
    Inventors: Guo-Neng Lu, Patrick Pittet, Ruoxi Wang
  • Publication number: 20100069749
    Abstract: A device for in vivo dosimetry, the device comprising: a miniature probe (1) comprising at least: a radioluminescent material (3) that emits a radioluminescence signal of intensity that is a function of the high-energy radiation irradiating said material; and an optical fiber (4, 16) receiving the luminescence signal and conveying it to a luminescence detector system (14); and a luminescence detector system (14); the device being characterized in that the radioluminescent material (3) is gallium nitride (GaN) that emits a luminescence signal at least in a narrow band BE, and in that the luminescence detector system (14) includes an optical device (18) enabling the narrow emission band of gallium nitride to be selected.
    Type: Application
    Filed: January 30, 2008
    Publication date: March 18, 2010
    Applicants: UNIVERSITE CLAUDE BERNARD LYON I, CENTRE HOSPITALIER UNIVERSITAIRE DE GRENOBLE, UNIVERSITE JOSEPH FOURIER GRENOBLE I
    Inventors: Guo-Neng Lu, Patrick Pittet, Jean-Marc Galvan
  • Patent number: 5883421
    Abstract: A photodetector based on buried junctions includes a semiconductor structure with two successive p-n junctions, buried at increasing depths, assembled in pairs in opposition, and defining at least three layers. One of the layers is adjacent to a photosensitive portion of the surface of the photodetector. A reverse bias is applied to the junctions, and the values of at least two internal currents passing through such junctions is detected. The internal currents are generated by received light, with each of the junctions corresponding to a particular wavelength of the received light.
    Type: Grant
    Filed: March 13, 1997
    Date of Patent: March 16, 1999
    Assignee: University Pierre et Marie Curie
    Inventors: Mohamed Ben Chouikha, Guo Neng Lu, Mohamed Sejil, Gerard Sou