Patents by Inventor Guo-Tsai Huang
Guo-Tsai Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9594309Abstract: Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient.Type: GrantFiled: July 13, 2015Date of Patent: March 14, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Guo-Tsai Huang, Chih-Ming Ke
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Publication number: 20150316859Abstract: Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient.Type: ApplicationFiled: July 13, 2015Publication date: November 5, 2015Inventors: Guo-Tsai Huang, Chih-Ming Ke
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Patent number: 9097978Abstract: Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient.Type: GrantFiled: February 3, 2012Date of Patent: August 4, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Guo-Tsai Huang, Chih-Ming Ke
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Patent number: 8755045Abstract: In one embodiment, a method for detecting design defects is provided. The method includes receiving design data of an integrated circuit (IC) on a wafer, measuring wafer topography across the wafer to obtain topography data, calculating a scanner moving average from the topography data and the design data to provide a scanner defocus map across the wafer, and determining a hotspot design defect from the scanner defocus map. A computer readable storage medium, and a system for detecting design defects are also provided.Type: GrantFiled: January 6, 2012Date of Patent: June 17, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jyuh-Fuh Lin, Te-Chih Huang, Guo-Tsai Huang, Jia-Rui Hu, Chih-Ming Ke
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Patent number: 8592107Abstract: Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular to the first direction. The second dimension is greater than the first dimension. The overlay mark also includes a second portion that includes a plurality of second features. Each of the second features have a third dimension measured in the first direction and a fourth dimension measured in the second direction. The fourth dimension is less than the third dimension. At least one of the second features is partially surrounded by the plurality of first features in both the first and second directions.Type: GrantFiled: November 2, 2012Date of Patent: November 26, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Guo-Tsai Huang, Fu-Jye Liang, Li-Jui Chen, Chih-Ming Ke
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Publication number: 20130201461Abstract: Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient.Type: ApplicationFiled: February 3, 2012Publication date: August 8, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Guo-Tsai Huang, Chih-Ming Ke
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Publication number: 20130176558Abstract: In one embodiment, a method for detecting design defects is provided. The method includes receiving design data of an integrated circuit (IC) on a wafer, measuring wafer topography across the wafer to obtain topography data, calculating a scanner moving average from the topography data and the design data to provide a scanner defocus map across the wafer, and determining a hotspot design defect from the scanner defocus map. A computer readable storage medium, and a system for detecting design defects are also provided.Type: ApplicationFiled: January 6, 2012Publication date: July 11, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jyuh-Fuh Lin, Te-Chih Huang, Guo-Tsai Huang, Jia-Rui Hu, Chih-Ming Ke
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Patent number: 8329360Abstract: Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular to the first direction. The second dimension is greater than the first dimension. The overlay mark also includes a second portion that includes a plurality of second features. Each of the second features have a third dimension measured in the first direction and a fourth dimension measured in the second direction. The fourth dimension is less than the third dimension. At least one of the second features is partially surrounded by the plurality of first features in both the first and second directions.Type: GrantFiled: December 4, 2009Date of Patent: December 11, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Guo-Tsai Huang, Fu-Jye Liang, Li-Jui Chen, Chih-Ming Ke
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Publication number: 20110133347Abstract: Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular to the first direction. The second dimension is greater than the first dimension. The overlay mark also includes a second portion that includes a plurality of second features. Each of the second features have a third dimension measured in the first direction and a fourth dimension measured in the second direction. The fourth dimension is less than the third dimension. At least one of the second features is partially surrounded by the plurality of first features in both the first and second directions.Type: ApplicationFiled: December 4, 2009Publication date: June 9, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Guo-Tsai Huang, Fu-Jye Liang, Li-Jui Chen, Chih-Ming Ke
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Patent number: 7350416Abstract: A method for determining properties or a thin film includes the steps of: providing a piezoelectric substrate; providing a slanted finger interdigital transducer unit that includes a transmitter port and a receiver port on the piezoelectric substrate; forming the thin film on the piezoelectric substrate between the transmitter port and the receiver port; applying an input signal to the transmitter port; and measuring a phase difference, which corresponds to the input signal, from the receiver port. Accordingly, properties of the thin film are determined based on the measured phase difference. An apparatus for realizing the method is also disclosed.Type: GrantFiled: July 29, 2005Date of Patent: April 1, 2008Inventors: Yung-Yu Chen, Tsung-Tsong Wu, Guo-Tsai Huang, Pei-Zen Chang
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Publication number: 20060172445Abstract: A method for determining properties or a thin film includes the steps of: providing a piezoelectric substrate; providing a slanted finger interdigital transducer unit that includes a transmitter port and a receiver port on the piezoelectric substrate; forming the thin film on the piezoelectric substrate between the transmitter port and the receiver port; applying an input signal to the transmitter port; and measuring a phase difference, which corresponds to the input signal, from the receiver port. Accordingly, properties of the thin film are determined based on the measured phase difference. An apparatus for realizing the method is also disclosed.Type: ApplicationFiled: July 29, 2005Publication date: August 3, 2006Inventors: Yung-Yu Chen, Tsung-Tsong Wu, Guo-Tsai Huang, Pei-Zen Chang