Abstract: A magnetic memory cell is provided that includes a free layer that is pinned on both of its sides to form one or more domain wall structures. The one or more domain wall structures define one or more logic states by controlling the motion of the one or more domain wall structures.

Abstract: An EHE magnetic sensor has an alloy of the form Ry[MxN100−x]100−y, M being Fe, Co, Ni, or magnetic alloys that contain Fe, Co or Ni. N is from the fifth or sixth period of the periodic table. If present, R is a rare earth element. In one embodiment, the alloy exhibits a Temperature Coefficient ≦0.003 K−1 in the room temperature region. Various geometric shapes of sensors are presented including one and two-dimensional arrays of sensors for measuring spatial magnetic fields. Vias (98, 100, 102, 104) defined by a substrate (92) onto which an alloy layer (106) is disposed are filled with a conductive material in certain embodiments of arrays. Methods are disclosed for making a sensor, for designing a sensor at a thickness, for determining maximum acceptable current through a sensor, for reducing Joule heating of a sensor, and for making an array of sensors.