Patents by Inventor Guo-Yi SHIU

Guo-Yi SHIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240379908
    Abstract: A semiconductor structure includes a micro semiconductor device and a support fragment. The micro semiconductor device has a first surface and a second surface opposite the first surface. The micro semiconductor device includes a first electrode and a second electrode on the first surface. The first electrode and the second electrode are separated from each other. The support fragment is left on the micro semiconductor device and positioned corresponding to the region between the main portion of the first electrode and the second electrode in the vertical direction. The support fragment has an annular breaking surface in a plan view of the support fragment.
    Type: Application
    Filed: April 16, 2024
    Publication date: November 14, 2024
    Inventors: Guo-Yi SHIU, Shiou-Yi KUO
  • Publication number: 20240355986
    Abstract: A micro light-emitting diode package structure and a forming method thereof are provided. The micro light-emitting diode package structure includes micro light-emitting diode dies, a light-transmitting layer, a first insulating layer, redistribution layers, and conductive elements. The micro light-emitting diode dies are disposed side by side and each includes an electrode surface, a light-emitting surface, and side surfaces. The electrode surface and the light-emitting surface are opposite to each other, and the side surfaces are between them. The light-transmitting layer covers the light-emitting surface and the side surfaces. The first insulating layer is under the micro light-emitting diode dies and in direct contact with the electrode surface. The redistribution layers are disposed under the first insulating layer and pass through the first insulating layer to electrically connect the electrode surface.
    Type: Application
    Filed: April 11, 2024
    Publication date: October 24, 2024
    Inventors: Shiou-Yi KUO, Guo-Yi SHIU, Chin-Hung LO, Chih-Hao LIN, Cheng-Hsien LI, Wei-Yuan MA
  • Publication number: 20240313180
    Abstract: A micro light-emitting diode pixel structure and a method for forming the same are provided. The micro light emitting diode pixel structure includes micro light emitting diode chips, redistribution layers, bonding pads, an insulating layer, a flexible material layer and a first hard mask pattern. The redistribution layers are electrically connected to electrode surfaces of the micro light-emitting diode chips. The bonding pads are disposed under the redistribution layers. The insulation layer is disposed between the redistribution layers and the bonding pads. The flexible material layer disposed on the insulating layer to cover the micro light-emitting diode chips, the redistribution layers and insulation layer. The first hard mask pattern is disposed under or above the flexible material layers. In a cross-sectional view, the first hard mask pattern has a first edge and the flexible material layer has a second edge flush with the first edge.
    Type: Application
    Filed: October 31, 2023
    Publication date: September 19, 2024
    Inventors: Shiou-Yi KUO, Guo-Yi SHIU
  • Publication number: 20230299056
    Abstract: A light-emitting diode device including a pixel structure including first, second and third light-emitting diode chips, a passivation layer, and first, second, third and fourth circuit layers is provided. The first and second light-emitting diode chips are positioned on a top surface opposite to a light-emitting surface of the third light-emitting diode chip. First and second vertical projections of the first and second light-emitting diode chips on the top surface do not overlap each other. First and second bonding surfaces of the first and second circuit layers corresponding to openings in the passivation layer are positioned to overlap the first vertical projection and are separated from the second vertical projection. Third and fourth bonding surfaces of the third and fourth circuit layers that correspond to openings in the passivation layer are positioned to overlap the second vertical projection and are separated from the first vertical projection.
    Type: Application
    Filed: March 17, 2023
    Publication date: September 21, 2023
    Inventors: Shiou-Yi KUO, Te-Chung WANG, Guo-Yi SHIU
  • Publication number: 20230197905
    Abstract: A light-emitting device includes a substrate, a plurality of light-emitting diode (LED) dies, a first reflection layer, and a second reflection layer. The LED dies are on the substrate. The first reflection layer is on the LED dies. The second reflection layer is on the first reflection layer. The first reflection layer is configured to reflect a waveband of light emitted from the LED dies. The second reflection layer is configured to reflect a laser waveband, wherein the wavelength of the laser waveband is less than 420 nm.
    Type: Application
    Filed: December 8, 2022
    Publication date: June 22, 2023
    Inventors: Jih-Kang CHEN, Shiou-Yi KUO, Guo-Yi SHIU
  • Publication number: 20230131636
    Abstract: Embodiments provide a micro light-emitting diode package structure and a method for forming the same. The micro light-emitting diode package structure includes a redistribution layer, a control device, micro light-emitting diodes, and a flexible material layer. The control device and the micro light-emitting diodes are disposed on and electrically connected to the redistribution layer. The flexible material layer covers the control device and the micro light-emitting diodes, wherein the micro light-emitting diodes are in contact with the flexible material layer.
    Type: Application
    Filed: October 20, 2022
    Publication date: April 27, 2023
    Inventors: Shiou-Yi KUO, Guo-Yi SHIU, Chih-Hao LIN, Min-Che TSAI, Jian-Chin LIANG
  • Publication number: 20230057589
    Abstract: A light-emitting diode chip includes a semiconductor layer, an insulating layer, a first and a second electrode. The semiconductor layer has a top side, a bottom side opposite to the top side and a sidewall connecting the top side and the bottom side, and a concave-convex structure is at the top side of the semiconductor layer. The insulating layer covers the sidewall and the bottom side of the semiconductor layer, and has a protruding portion extending and protruding above the concave-convex structure along a direction parallel to the sidewall. A vertical distance between a highest point of the concave-convex structure and that of the protruding portion is from 0.5 ?m to four times the thickness of the semiconductor layer. The first and the second electrode are on the bottom side of the semiconductor layer and penetrate through the insulating layer. The second electrode is adjacent to the first electrode.
    Type: Application
    Filed: May 10, 2022
    Publication date: February 23, 2023
    Inventors: Jih-Kang CHEN, Shiou-Yi KUO, Guo-Yi SHIU
  • Patent number: 11569116
    Abstract: A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer and a pick-up layer. The first type semiconductor layer and the second type semiconductor layer are located on two opposite sides of the active layer respectively. The pick-up layer is located on the second type semiconductor layer, wherein the pick-up layer has a patterned outer surface to serve as a grabbed surface during transferring.
    Type: Grant
    Filed: June 10, 2021
    Date of Patent: January 31, 2023
    Assignee: Lextar Electronics Corporation
    Inventors: Shiou-Yi Kuo, Guo-Yi Shiu
  • Publication number: 20210398841
    Abstract: A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer and a pick-up layer. The first type semiconductor layer and the second type semiconductor layer are located on two opposite sides of the active layer respectively. The pick-up layer is located on the second type semiconductor layer, wherein the pick-up layer has a patterned outer surface to serve as a grabbed surface during transferring.
    Type: Application
    Filed: June 10, 2021
    Publication date: December 23, 2021
    Inventors: Shiou-Yi KUO, Guo-Yi SHIU
  • Patent number: 10573784
    Abstract: A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: February 25, 2020
    Assignee: LEXITAR ELECTRONICS CORPORATION
    Inventors: Shiou-Yi Kuo, Jun-Rong Chen, Guo-Yi Shiu
  • Publication number: 20190081210
    Abstract: A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.
    Type: Application
    Filed: July 18, 2018
    Publication date: March 14, 2019
    Inventors: Shiou-Yi KUO, Jun-Rong CHEN, Guo-Yi SHIU