Abstract: A liquid crystal compound and a composition employing the same are provided. The liquid crystal compound has a structure represented by Formula (I) wherein R1, A1, A2, A3, A4, Z1, Z2, Z3, Z4, X, m, n, o, and p are defined as in the description.

Abstract: A liquid crystal compound and a composition employing the same are provided. The liquid crystal compound has a structure represented by Formula (I) wherein R1, A1, A2, A3, A4, Z1, Z2, Z3, Z4, X, m, n, o, and p are defined as in the description.

Abstract: Substantially planar or even layers in semiconductor trenches allow for even distribution of subsequent layers in semiconductor processing and reduce divots in semiconductor device layers. A semiconductor device may include an isolation structure formed in a trench. The isolation structure may have a cover oxide layer and a base oxide layer holding the cover oxide layer. The top surface of the isolation structure is substantially planar. An oxidation process may substantially eliminate nitrogen from a top portion of the isolation structure, resulting in a balanced etch rate in the top portion and a substantially even isolation structure top surface.