Patents by Inventor Guoan Du

Guoan Du has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220109104
    Abstract: A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.
    Type: Application
    Filed: December 15, 2021
    Publication date: April 7, 2022
    Applicant: United Microelectronics Corp.
    Inventors: Hai Tao Liu, Li Li Ding, Yao-Hung Liu, Guoan Du, Qi Lu Li, Chunlei Wan, Yi Yu Lin, Yuchao Chen, Huakai Li, Hung-Yueh Chen
  • Patent number: 11239419
    Abstract: The present invention relates to a structure of a memory device. The structure of a memory device includes a substrate, including a bottom electrode layer formed therein. A buffer layer is disposed on the substrate, in contact with the bottom electrode layer. A resistive layer surrounds a whole sidewall of the buffer layer, and extends upward vertically from the substrate. A mask layer is disposed on the buffer layer and the resistive layer. A noble metal layer is over the substrate, and fully covers the resistive layer and the mask layer. A top electrode layer is disposed on the noble metal layer.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: February 1, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hai Tao Liu, Li Li Ding, Yao-Hung Liu, Guoan Du, Qi Lu Li, Chunlei Wan, Yi Yu Lin, Yuchao Chen, Huakai Li, Hung-Yueh Chen
  • Publication number: 20200388759
    Abstract: The present invention relates to a structure of a memory device. The structure of a memory device includes a substrate, including a bottom electrode layer formed therein. A buffer layer is disposed on the substrate, in contact with the bottom electrode layer. A resistive layer surrounds a whole sidewall of the buffer layer, and extends upward vertically from the substrate. A mask layer is disposed on the buffer layer and the resistive layer. A noble metal layer is over the substrate, and fully covers the resistive layer and the mask layer. A top electrode layer is disposed on the noble metal layer.
    Type: Application
    Filed: July 8, 2019
    Publication date: December 10, 2020
    Applicant: United Microelectronics Corp.
    Inventors: HAI TAO LIU, Li Li Ding, Yao-Hung Liu, Guoan Du, Qi Lu Li, Chunlei Wan, Yi Yu Lin, Yuchao Chen, Huakai Li, Hung-Yueh Chen
  • Patent number: 9799705
    Abstract: The present invention provides a semiconductor device. The semiconductor device includes a contact structure disposed in a first dielectric layer, a second dielectric layer disposed on the first dielectric layer and having an opening disposed therein, a spacer disposed in the opening and partially covering the contact structure, and a resistive random-access memory (RRAM) disposed on the contact structure and directly contacting the spacer, wherein the RRAM includes a bottom electrode, a top electrode, and a switching resistance layer disposed between the bottom electrode and the top electrode.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: October 24, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Liang Yi, Chia-Ching Hsu, Shen-De Wang, Ko-Chi Chen, Guoan Du