Patents by Inventor GUOAN LIU
GUOAN LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10192744Abstract: A method for manufacturing a semiconductor device may include the following steps: preparing a first substrate; providing a first conductor, which is configured to electrically connect two elements associated with the first substrate; providing a second conductor on the first substrate, wherein the second conductor is electrically connected to the first conductor; preparing a second substrate; providing a third conductor, which is configured to electrically connect two elements associated with the second substrate; providing a fourth conductor on the second substrate, wherein the fourth conductor is electrically connected to the third conductor; providing a fifth conductor on the fourth conductor; and combining the fifth conductor with the second conductor through eutectic bonding.Type: GrantFiled: October 9, 2017Date of Patent: January 29, 2019Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Guoan Liu, Wei Xu
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Publication number: 20180033624Abstract: A method for manufacturing a semiconductor device may include the following steps: preparing a first substrate; providing a first conductor, which is configured to electrically connect two elements associated with the first substrate; providing a second conductor on the first substrate, wherein the second conductor is electrically connected to the first conductor; preparing a second substrate; providing a third conductor, which is configured to electrically connect two elements associated with the second substrate; providing a fourth conductor on the second substrate, wherein the fourth conductor is electrically connected to the third conductor; providing a fifth conductor on the fourth conductor; and combining the fifth conductor with the second conductor through eutectic bonding.Type: ApplicationFiled: October 9, 2017Publication date: February 1, 2018Inventors: Guoan LIU, Wei XU
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Patent number: 9856192Abstract: A method for preparing 2,3,3,3-tetrafluoropropene and 1,3,3,3-tetrafluoropropene, including: providing a first reactor including a first section, a second section, and a third section, with each section being filled with different catalysts, preheating hexafluoropropylene and hydrogen, and introducing the hexafluoropropylene and the hydrogen to the first reactor to yield a first mixture including: 1,1,1,2,3-pentafluoropropane, 1,1,1,2,3,3-hexafluoropropane, and hydrogen fluoride; introducing the first mixture to a first distillation column to yield 1,1,1,2,3,3-hexafluoropropane at a top of the first distillation column and 1,1,1,2,3-pentafluoropropane and hydrogen fluoride at a bottom of the first distillation column, recycling the 1,1,1,2,3,3-hexafluoropropane to a lower part of the first section of the first reactor, and introducing the 1,1,1,2,3-pentafluoropropane and the hydrogen fluoride to a second reactor to yield a second mixture including: 2,3,3,3-tetrafluoropropene, 1,3,3,3-tetrafluoropropene, hydrType: GrantFiled: January 12, 2017Date of Patent: January 2, 2018Assignees: ZHEJIANG QUZHOU JUXIN FLUORINE CHEMICAL CO., LTD., ZHEJIANG QUHUA FLUOR-CHEMISTRY CO., LTD.Inventors: Jun Lei, Aiguo Wang, Bo Yang, Yan Zhang, Huadong Zhou, Yang Zhao, Guoan Liu, Yi Zhu, Gang Su
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Patent number: 9812326Abstract: A method for manufacturing a semiconductor device may include the following steps: preparing a first substrate; providing a first conductor, which is configured to electrically connect two elements associated with the first substrate; providing a second conductor on the first substrate, wherein the second conductor is electrically connected to the first conductor; preparing a second substrate; providing a third conductor, which is configured to electrically connect two elements associated with the second substrate; providing a fourth conductor on the second substrate, wherein the fourth conductor is electrically connected to the third conductor; providing a fifth conductor on the fourth conductor; and combining the fifth conductor with the second conductor through eutectic bonding.Type: GrantFiled: January 6, 2016Date of Patent: November 7, 2017Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Guoan Liu, Wei Xu
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Patent number: 9761794Abstract: A method for manufacturing a magnetoresistive sensor may include the following steps: forming a trench structure in a substrate, wherein the step of forming the trench structure comprises performing a wet etching process on a substrate material member, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; forming a first magnetic element on the first side of the trench structure; forming a second magnetic element on the second side of the trench structure; and forming a third magnetic element on the third side of the trench structure.Type: GrantFiled: August 24, 2016Date of Patent: September 12, 2017Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Wei Xu, Guoan Liu
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Publication number: 20170144950Abstract: A method for preparing 2,3,3,3-tetrafluoropropene and 1,3,3,3-tetrafluoropropene, including: providing a first reactor including a first section, a second section, and a third section, with each section being filled with different catalysts, preheating hexafluoropropylene and hydrogen, and introducing the hexafluoropropylene and the hydrogen to the first reactor to yield a first mixture including: 1,1,1,2,3-pentafluoropropane, 1,1,1,2,3,3-hexafluoropropane, and hydrogen fluoride; introducing the first mixture to a first distillation column to yield 1,1,1,2,3,3-hexafluoropropane at a top of the first distillation column and 1,1,1,2,3-pentafluoropropane and hydrogen fluoride at a bottom of the first distillation column, recycling the 1,1,1,2,3,3-hexafluoropropane to a lower part of the first section of the first reactor, and introducing the 1,1,1,2,3-pentafluoropropane and the hydrogen fluoride to a second reactor to yield a second mixture including: 2,3,3,3-tetrafluoropropene, 1,3,3,3-tetrafluoropropene, hydroType: ApplicationFiled: January 12, 2017Publication date: May 25, 2017Inventors: Jun LEI, Aiguo WANG, Bo YANG, Yan ZHANG, Huadong ZHOU, Yang ZHAO, Guoan LIU, Yi ZHU, Gang SU
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Patent number: 9598276Abstract: The present disclosure provides MEMS devices and their fabrication methods. A first dielectric layer is formed on a substrate including integrated circuits therein. One or more first metal connections and second metal connections are formed in the first dielectric layer and are electrically connected to the integrated circuits. A second dielectric layer is formed on the first dielectric layer. An acceleration sensor is formed in the second dielectric layer to electrically connect to the one or more first metal connections. One or more first metal vias are formed in the second dielectric layer to electrically connect to the second metal connections. A pressure sensor is formed on the second dielectric layer to electrically connect to the first metal vias. The MEMS devices provided by the present disclosure are compact in size through the integration of the acceleration sensor and the pressure sensor.Type: GrantFiled: March 12, 2015Date of Patent: March 21, 2017Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Wei Xu, Guoan Liu
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Publication number: 20160365507Abstract: A method for manufacturing a magnetoresistive sensor may include the following steps: forming a trench structure in a substrate, wherein the step of forming the trench structure comprises performing a wet etching process on a substrate material member, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; forming a first magnetic element on the first side of the trench structure; forming a second magnetic element on the second side of the trench structure; and forming a third magnetic element on the third side of the trench structure.Type: ApplicationFiled: August 24, 2016Publication date: December 15, 2016Inventors: Wei XU, Guoan LIU
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Patent number: 9450178Abstract: A method for manufacturing a magnetoresistive sensor may include the following steps: forming a trench structure in a substrate, wherein the step of forming the trench structure comprises performing a wet etching process on a substrate material member, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; forming a first magnetic element on the first side of the trench structure; forming a second magnetic element on the second side of the trench structure; and forming a third magnetic element on the third side of the trench structure.Type: GrantFiled: March 25, 2015Date of Patent: September 20, 2016Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Wei Xu, Guoan Liu
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Publication number: 20160204050Abstract: A method for manufacturing a semiconductor device may include the following steps: preparing a first substrate; providing a first conductor, which is configured to electrically connect two elements associated with the first substrate; providing a second conductor on the first substrate, wherein the second conductor is electrically connected to the first conductor; preparing a second substrate; providing a third conductor, which is configured to electrically connect two elements associated with the second substrate; providing a fourth conductor on the second substrate, wherein the fourth conductor is electrically connected to the third conductor; providing a fifth conductor on the fourth conductor; and combining the fifth conductor with the second conductor through eutectic bonding.Type: ApplicationFiled: January 6, 2016Publication date: July 14, 2016Inventors: Guoan LIU, Wei XU
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Patent number: 9334157Abstract: The present disclosure provides MEMS devices and their fabrication methods. A first dielectric layer is formed on a first substrate including integrated circuits therein. One or more first metal connections and second metal connections are formed in the first dielectric layer and are electrically connected to the integrated circuits. A second dielectric layer is formed on the first dielectric layer. An acceleration sensor is formed in the second dielectric layer to electrically connect to the one or more first metal connections. A second substrate is bonded to the second dielectric layer. One or more first metal vias are formed in the second substrate and in the second dielectric layer to electrically connect to the second metal connections. A pressure sensor is formed on the second substrate to electrically connect to the first metal vias.Type: GrantFiled: March 9, 2015Date of Patent: May 10, 2016Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Wei Xu, Guoan Liu
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Publication number: 20150349243Abstract: A method for manufacturing a magnetoresistive sensor may include the following steps: forming a trench structure in a substrate, wherein the step of forming the trench structure comprises performing a wet etching process on a substrate material member, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; forming a first magnetic element on the first side of the trench structure; forming a second magnetic element on the second side of the trench structure; and forming a third magnetic element on the third side of the trench structure.Type: ApplicationFiled: March 25, 2015Publication date: December 3, 2015Inventors: Wei XU, Guoan LIU
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Publication number: 20150274507Abstract: The present disclosure provides MEMS devices and their fabrication methods. A first dielectric layer is formed on a substrate including integrated circuits therein. One or more first metal connections and second metal connections are formed in the first dielectric layer and are electrically connected to the integrated circuits. A second dielectric layer is formed on the first dielectric layer. An acceleration sensor is formed in the second dielectric layer to electrically connect to the one or more first metal connections. One or more first metal vias are formed in the second dielectric layer to electrically connect to the second metal connections. A pressure sensor is formed on the second dielectric layer to electrically connect to the first metal vias. The MEMS devices provided by the present disclosure are compact in size through the integration of the acceleration sensor and the pressure sensor.Type: ApplicationFiled: March 12, 2015Publication date: October 1, 2015Inventors: WEI XU, GUOAN LIU
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Publication number: 20150274512Abstract: The present disclosure provides MEMS devices and their fabrication methods. A first dielectric layer is formed on a first substrate including integrated circuits therein. One or more first metal connections and second metal connections are formed in the first dielectric layer and are electrically connected to the integrated circuits. A second dielectric layer is formed on the first dielectric layer. An acceleration sensor is formed in the second dielectric layer to electrically connect to the one or more first metal connections. A second substrate is bonded to the second dielectric layer. One or more first metal vias are formed in the second substrate and in the second dielectric layer to electrically connect to the second metal connections. A pressure sensor is formed on the second substrate to electrically connect to the first metal vias.Type: ApplicationFiled: March 9, 2015Publication date: October 1, 2015Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: WEI XU, GUOAN LIU
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Patent number: 8741747Abstract: A method for processing a glass substrate is disclosed. A glass substrate including a first surface, a second surface, and a side surface between the first surface and the second surface is provided. An opaque conductive layer is formed on the second surface and a part of the side surface close to the second surface. Thereafter, a semiconductor process is performed on the first surface. Thereafter, the opaque conductive layer on the second surface and the part of the side surface close to the second surface is removed. The problem of transporting a transparent glass substrate by some semiconductor tools is solved without increasing tool cost by enabling the sensing and transportation of glass substrates with optical sensor and/or electrical chuck. The fabrication of devices with a glass substrate is also achieved.Type: GrantFiled: June 29, 2011Date of Patent: June 3, 2014Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Xuanjie Liu, Herb Huang, Guoan Liu
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Publication number: 20120171835Abstract: A method for processing a glass substrate is disclosed. A glass substrate including a first surface, a second surface, and a side surface between the first surface and the second surface is provided. An opaque conductive layer is formed on the second surface and a part of the side surface close to the second surface. Thereafter, a semiconductor process is performed on the first surface. Thereafter, the opaque conductive layer on the second surface and the part of the side surface close to the second surface is removed. The problem of transporting a transparent glass substrate by some semiconductor tools is solved without increasing tool cost by enabling the sensing and transportation of glass substrates with optical sensor and/or electrical chuck. The fabrication of devices with a glass substrate is also achieved.Type: ApplicationFiled: June 29, 2011Publication date: July 5, 2012Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: XUANJIE LIU, HERB HUANG, GUOAN LIU