Abstract: A composite coating layer for coating a NdFeB rare earth magnet includes a first coating layer and a second coating layer formed over a surface of the first coating layer. The first coating layer includes a Nd coating layer, a Pr coating layer, or an alloy coating layer including two or more of Nd, Pr, and Cu. The second coating layer includes a Tb coating layer.

Abstract: A line-scanning chromatic confocal sensor, including a line light source, a dispersion assembly, a receiving assembly, a slit and a processing assembly. The line light source is configured to output a continuous, uniform and broad-spectrum linear light beam. The dispersion assembly includes a first collimating element, a first dispersing element and a first focusing element. The receiving assembly includes a second focusing element, a second dispersing element and a second collimating element, and is arranged symmetrically with the dispersion assembly. The slit is configured to filter out component with a non-focusing wavelength from the reflected light. The processing assembly includes a third collimating element, a third dispersing element, a third focusing element and an image sensor.

Abstract: Described herein are systems and methods for a design method and new interconnect structures with incorporated interdigital trapezoidal tabs structures enabled with materials with either larger permittivity or permeability for improved signal integrity.

Abstract: An electrically tunable radio frequency phase shifter with compact 3-D structure that integrates both ferromagnetic and ferroelectric materials, and utilizes 3-D structure to increase the tuning efficiency and achieve miniaturization.

Abstract: An antenna assembly includes an antenna and a heatsink. The antenna may be configured to support radio communications and generate heat, and may include a forward antenna surface configured to transmit or receive communications signals and a rear antenna surface that is affixed to a substrate. The heatsink structure may be positioned to be within a forward electromagnetic field that is emitted from the forward antenna surface and away from the rear antenna surface. The heatsink structure may be configured to perform a convection operation between the antenna and a fluid to perform thermal dissipation of the heat from the antenna.

Abstract: An electrically tunable radio frequency phase shifter with compact 3-D structure that integrates both ferromagnetic and ferroelectric materials, and utilizes 3-D structure to increase the tuning efficiency and achieve miniaturization.

Abstract: A fingerprint recognition detection circuit includes an operational amplifier, an integrating capacitor and a first switch connected in series, and a second switch. A non-inverting input terminal of the operational amplifier is coupled to a reference voltage terminal, and an inverting input terminal of the operational amplifier is coupled to a fingerprint sensing capacitor. The integrating capacitor and the first switch are coupled between the inverting input terminal of the operational amplifier and an output terminal of the operational amplifier. The second switch is coupled between the inverting input terminal of the operational amplifier and the output terminal of the operational amplifier.

Abstract: A reconfigurable antenna apparatus may include an antenna assembly and control circuitry. The antenna assembly may include an antenna patch array having a plurality of antenna patches and a switch array having plurality of switches. Each switch of the plurality switches may be electronically controllable to transition between states including a conducting state and a non-conducting state. Each switch may be electrically connected between two of the antenna patches of the antenna array. The control circuitry may be configured to control the states of the switches of the switch array to operate the antenna patch array in a first communications mode at a first wavelength, and control the states of the switches of the switch array to operate the antenna patch array in a second communications mode at a second wavelength.

Abstract: A fingerprint recognition detection circuit includes an operational amplifier, an integrating capacitor and a first switch connected in series, and a second switch. A non-inverting input terminal of the operational amplifier is coupled to a reference voltage terminal, and an inverting input terminal of the operational amplifier is coupled to a fingerprint sensing capacitor. The integrating capacitor and the first switch are coupled between the inverting input terminal of the operational amplifier and an output terminal of the operational amplifier. The second switch is coupled between the inverting input terminal of the operational amplifier and the output terminal of the operational amplifier, and the second switch is connected in parallel with the integrating capacitor and the first switch connected in series.

Abstract: Described herein are systems and methods for a design method and new interconnect structures with incorporated interdigital trapezoidal tabs structures enabled with materials with either larger permittivity or permeability for improved signal integrity.

Abstract: An antenna assembly includes an antenna and a heatsink. The antenna may be configured to support radio communications and generate heat, and may include a forward antenna surface configured to transmit or receive communications signals and a rear antenna surface that is affixed to a substrate. The heatsink structure may be positioned to be within a forward electromagnetic field that is emitted from the forward antenna surface and away from the rear antenna surface. The heatsink structure may be configured to perform a convection operation between the antenna and a fluid to perform thermal dissipation of the heat from the antenna.

Abstract: A reconfigurable antenna apparatus may include an antenna assembly and control circuitry. The antenna assembly may include an antenna patch array having a plurality of antenna patches and a switch array having plurality of switches. Each switch of the plurality switches may be electronically controllable to transition between states including a conducting state and a non-conducting state. Each switch may be electrically connected between two of the antenna patches of the antenna array. The control circuitry may be configured to control the states of the switches of the switch array to operate the antenna patch array in a first communications mode at a first wavelength, and control the states of the switches of the switch array to operate the antenna patch array in a second communications mode at a second wavelength.

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.

Abstract: An electrically tunable radio frequency phase shifter with compact 3-D structure that integrates both ferromagnetic and ferroelectric materials, and utilizes 3-D structure to increase the tuning efficiency and achieve miniaturization.

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.