Patents by Inventor Guobin Shao

Guobin Shao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • IGBT SHORT-CIRCUIT DETECTION AND PROTECTION CIRCUIT AND IGBT-BASED CONTROLLABLE RECTIFIER CIRCUIT
    Publication number: 20190386483
    Abstract: An IGBT short-circuit detection and protection circuit, comprising: a driving unit, the output end thereof outputting a PWM driving signal and being connected to gate ends of a first IGBT (IGBT1) and a second IGBT (IGBT2), so as to simultaneously control the turning ON/OFF of the first IGBT and the second IGBT; a comparing unit, comprising a threshold pin and a detection pin (Vdesat), the threshold pin being connected to a threshold voltage, the detection pin being connected by means of a first diode (D1) and a second diode (D3) to collectors (C) of the first IGBT and the second IGBT, respectively, the detection pin supplying a detection current to the first diode and the second diode, cathodes of the first diode and the second diode being connected to the collectors of the first IGBT and the second IGBT, respectively; when the voltage at the detection pin is higher than the threshold voltage, the driving unit controlling the first IGBT and the second IGBT to be turned off.
    Type: Application
    Filed: June 25, 2019
    Publication date: December 19, 2019
    Inventors: Yu Miao, Yongquan Xie, Chengzhi Li, Guobin Shao
  • IGBT SHORT-CIRCUIT DETECTION AND PROTECTION CIRCUIT AND IGBT-BASED CONTROLLABLE RECTIFIER CIRCUIT
    Publication number: 20180287372
    Abstract: An IGBT short-circuit detection and protection circuit, comprising: a driving unit, the output end thereof outputting a PWM driving signal and being connected to gate ends of a first IGBT (IGBT1) and a second IGBT (IGBT2), so as to simultaneously control the turning ON/OFF of the first IGBT and the second IGBT; a comparing unit, comprising a threshold pin and a detection pin (Vdesat), the threshold pin being connected to a threshold voltage, the detection pin being connected by means of a first diode (D1) and a second diode (D3) to collectors (C) of the first IGBT and the second IGBT, respectively, the detection pin supplying a detection current to the first diode and the second diode, cathodes of the first diode and the second diode being connected to the collectors of the first IGBT and the second IGBT, respectively; when the voltage at the detection pin is higher than the threshold voltage, the driving unit controlling the first IGBT and the second IGBT to be turned off.
    Type: Application
    Filed: April 21, 2016
    Publication date: October 4, 2018
    Inventors: Yu Miao, Yongquan Xie, Chengzhi Li, Guobin Shao