Patents by Inventor Guobin Yu
Guobin Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240426145Abstract: An actuator includes: a housing having a cable outlet, a driver, an output rotor, a first cable and a second cable. The driver is disposed inside the housing. The output rotor is configured to be driven to rotate forward or backward by the driver, and has a fitting part. A first end of the first cable and a first end of the second cable fit to the fitting part, and a second end of the first cable and a second end of the second cable extend out of the housing through the cable outlet. The output rotor is configured to rotate forward to drive the first cable through the fitting part, and is configured to rotate backward to drive the second cable through the fitting part.Type: ApplicationFiled: September 10, 2024Publication date: December 26, 2024Inventors: Guobin YU, Rongjian LIANG, Xianlin NONG, Shigui QIN
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Patent number: 11562932Abstract: A method for manufacturing a semiconductor device includes providing a substrate including a first device region and a second device region spaced apart from each other, forming a first oxide layer on the first device region and the second device region, forming a second oxide layer below the first oxide layer, forming a mask layer on the first oxide layer on the first device region while exposing the first oxide layer on the second device region, removing the first and second oxide layers on the second device region using the mask layer as a mask, removing the mask layer, and forming a gate oxide layer on the second device region. The thus formed gate oxide layer structure has improved quality and reliability.Type: GrantFiled: March 20, 2018Date of Patent: January 24, 2023Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) CorporationInventors: Guobin Yu, Xiaoping Xu
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Patent number: 10229926Abstract: A method for manufacturing a flash memory device includes providing a substrate structure including a substrate, an insulating layer on the substrate, and a stack structure including a charge storage layer, a tunneling dielectric layer, a charge trapping layer, a blocking dielectric layer and a gate layer disposed sequentially from bottom to top on the insulating layer. The method also includes performing a selective nitriding process on the substrate structure to form a nitride layer exposed surfaces of the charge storage layer and the gate layer, and forming an isolation region on side surfaces of the stack structure. The method can mitigate the problem of an undesirable increase in the threshold voltage with an increase in the integration density of the flash memory device.Type: GrantFiled: March 20, 2018Date of Patent: March 12, 2019Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONInventors: Guobin Yu, Xiaoping Xu
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Publication number: 20180277557Abstract: A method for manufacturing a flash memory device includes providing a substrate structure including a substrate, an insulating layer on the substrate, and a stack structure including a charge storage layer, a tunneling dielectric layer, a charge trapping layer, a blocking dielectric layer and a gate layer disposed sequentially from bottom to top on the insulating layer. The method also includes performing a selective nitriding process on the substrate structure to form a nitride layer exposed surfaces of the charge storage layer and the gate layer, and forming an isolation region on side surfaces of the stack structure. The method can mitigate the problem of an undesirable increase in the threshold voltage with an increase in the integration density of the flash memory device.Type: ApplicationFiled: March 20, 2018Publication date: September 27, 2018Inventors: GUOBIN YU, Xiaoping Xu
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Publication number: 20180277441Abstract: A method for manufacturing a semiconductor device includes providing a substrate including a first device region and a second device region spaced apart from each other, forming a first oxide layer on the first device region and the second device region, forming a second oxide layer below the first oxide layer, forming a mask layer on the first oxide layer on the first device region while exposing the first oxide layer on the second device region, removing the first and second oxide layers on the second device region using the mask layer as a mask, removing the mask layer, and forming a gate oxide layer on the second device region. The thus formed gate oxide layer structure has improved quality and reliability.Type: ApplicationFiled: March 20, 2018Publication date: September 27, 2018Inventors: Guobin Yu, Xiaoping Xu
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Patent number: 9613868Abstract: A method for forming FinFETs includes, sequentially, providing a substrate; forming a plurality of fins on a surface of the substrate; forming a gate structure overlying on at least one of the plurality of fins; forming a barrier layer covering top and side surfaces of the gate structures, and top and side surfaces of the plurality of fins; performing a radical oxidation process to convert a top portion of the barrier layer to a passive layer to form a remaining barrier layer and to cause the top surfaces of the fins to be flat after subsequent etching processes; performing an etch-back process on the passive layer to form passive sidewalls on side surfaces of the portions of the remaining barrier on the side surfaces of the fins; and removing portions of the remaining barrier layer on the top surfaces of the fins by a wet etching process using the passive sidewalls as an etching mask.Type: GrantFiled: August 27, 2015Date of Patent: April 4, 2017Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventor: Guobin Yu
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Publication number: 20160064379Abstract: A method for forming FinFETs includes, sequentially, providing a substrate; forming a plurality of fins on a surface of the substrate; forming a gate structure overlying on at least one of the plurality of fins; forming a barrier layer covering top and side surfaces of the gate structures, and top and side surfaces of the plurality of fins; performing a radical oxidation process to convert a top portion of the barrier layer to a passive layer to form a remaining barrier layer and to cause the top surfaces of the fins to be flat after subsequent etching processes; performing an etch-back process on the passive layer to form passive sidewalls on side surfaces of the portions of the remaining barrier on the side surfaces of the fins; and removing portions of the remaining barrier layer on the top surfaces of the fins by a wet etching process using the passive sidewalls as an etching mask.Type: ApplicationFiled: August 27, 2015Publication date: March 3, 2016Inventor: GUOBIN YU
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Patent number: 9184291Abstract: A method for manufacturing a fin for a FinFET device includes providing a semiconductor substrate, forming a plurality of implanted regions in the semiconductor substrate, and epitaxially forming fins between two adjacent implanted regions. The method also includes forming an insulating structure between two adjacent fins.Type: GrantFiled: February 25, 2014Date of Patent: November 10, 2015Assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) CorporationInventors: Guobin Yu, Jing Lin
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Publication number: 20150060961Abstract: A method for manufacturing a fin for a FinFET device includes providing a semiconductor substrate, forming a plurality of implanted regions in the semiconductor substrate, and epitaxially forming fins between two adjacent implanted regions. The method also includes forming an insulating structure between two adjacent fins.Type: ApplicationFiled: February 25, 2014Publication date: March 5, 2015Applicants: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) CorporationInventors: GUOBIN YU, Jing Lin
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Patent number: 8665938Abstract: A wireless transmission apparatus includes a service processing unit, a duplexer, a radio frequency receiving unit, a frequency synthesizer, and a controller. The controller controls, according to a reduced TR interval, the frequency synthesizer to adjust a frequency of a local oscillation signal which is output by the frequency synthesizer to the radio frequency receiving unit. The service processing unit continues to send a service signal as a self-checking signal, and a part of the self-checking signal leaks into the radio frequency receiving unit through the duplexer. After the radio frequency receiving unit mixes a received signal with the local oscillation signal, a frequency of the self-checking signal included in an output signal falls within a pass-band range of an intermediate frequency receiving unit, which ensures that the self-checking signal can be looped back to the service processing unit, thereby determines whether a fault occurs in its own transmission channel.Type: GrantFiled: November 26, 2012Date of Patent: March 4, 2014Assignee: Huawei Technologies Co., Ltd.Inventors: Guobin Yu, Hongyong Lin, Yicai Wang