Abstract: A decoupled XY parallel micro-positioning stage, including a central moving platform, fixed mechanisms, bridge-type micro-displacement amplification mechanisms, a four-bar symmetrical flexible guide mechanism and a piezoelectric ceramic. Each fixed mechanism is arranged between adjacent amplification mechanisms and is symmetrical about X and Y axes centered on the moving platform. The amplification mechanism is symmetrically arranged with respect to the X and Y axes, and includes two first and second longitudinal beams and multiple crossbeams. The two first longitudinal beams are provided in parallel and spaced apart. The two second longitudinal beams are arranged spaced apart between the two first longitudinal beams, and are connected to the two first longitudinal beams via the crossbeams. The crossbeams are connected to the longitudinal beams via a flexible hinge. The piezoelectric ceramic is arranged between the two first longitudinal beams.

Abstract: A defroster and a vehicle are provided. The defroster includes: a housing defining an air outlet; a heating device disposed in the housing; an air blower defining a blowing outlet and disposed in the housing; and an air duct defining a duct inlet and a duct outlet, the air duct being disposed between the blowing outlet and the heating device so that air blown out from the blower outlet enters the air duct via the duct inlet and goes out of the air duct via the duct outlet, then passes through the heating device to exchange heat with the heating device, and is discharged out of the housing via the air outlet, wherein an area of the duct inlet is different from that of the duct outlet.

Abstract: A defroster and a vehicle are provided. The defroster includes: a housing defining an air outlet; a heating device disposed in the housing; an air blower defining a blowing outlet and disposed in the housing; and an air duct defining a duct inlet and a duct outlet, the air duct being disposed between the blowing outlet and the heating device so that air blown out from the blower outlet enters the air duct via the duct inlet and goes out of the air duct via the duct outlet, then passes through the heating device to exchange heat with the heating device, and is discharged out of the housing via the air outlet, wherein an area of the duct inlet is different from that of the duct outlet.

Abstract: The present invention relates to a method for improving the performance of P-type ohmic contact of gallium nitride LED wafer. Magneto sputtering is used to spray nickel material in nano particles onto the surface of gallium nitride epitaxial layer. The thickness of nickel is between 1 nm to 100 nm. Following that, at least one layer of high work function metal film is deposited onto the surface of the nickel metal layer, and the ratio of the thickness of the nickel metal layer to that of high work function metal film is 1:0.5˜4. Zinc oxide may replace nickel metal layer and high work function metal film. The object of the present invention is to simultaneously reduce the contact impedance of P-type luminous zone and enhance the traverse of electric current, thereby attaining an eventual equilibrium of contact impedance and luminous efficiency and thus increasing the life span of the wafer.

Abstract: The present invention relates to a method for improving the performance of P-type ohmic contact of gallium nitride LED wafer. Magneto sputtering is used to spray nickel material in nano particles onto the surface of gallium nitride epitaxial layer. The thickness of nickel is between 1 nm to 100 nm. Following that, at least one layer of high work function metal film is deposited onto the surface of the nickel metal layer, and the ratio of the thickness of the nickel metal layer to that of high work function metal film is 1:0.5˜4. Zinc oxide may replace nickel metal layer and high work function metal film. The object of the present invention is to simultaneously reduce the contact impedance of P-type luminous zone and enhance the traverse of electric current, thereby attaining an eventual equilibrium of contact impedance and luminous efficiency and thus increasing the life span of the wafer.