Patents by Inventor Guodong Dong

Guodong Dong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating thin film transistor, thin film transistor, array substrate, and display apparatus
    Patent number: 10777588
    Abstract: The present application provides a method of fabricating a thin film transistor. The method includes selecting a nano-structure material having a monotonic relationship between a threshold voltage and a channel length when the nano-structure material is formed as a channel part in a thin film transistor; forming an active layer using the nano-structure material; determining a nominal channel length of a channel part of the thin film transistor based on the monotonic relationship and a reference threshold voltage so that the thin film transistor is formed to have a nominal threshold voltage; and forming a source electrode and a drain electrode thereby forming the channel part in the active layer having the nominal channel length.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: September 15, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., PEKING UNIVERSITY
    Inventors: Hu Meng, Xuelei Liang, Jiye Xia, Boyuan Tian, Guodong Dong, Qi Huang
  • METHOD OF FABRICATING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, ARRAY SUBSTRATE, AND DISPLAY APPARATUS
    Publication number: 20200185422
    Abstract: The present application provides a method of fabricating a thin film transistor. The method includes selecting a nano-structure material having a monotonic relationship between a threshold voltage and a channel length when the nano-structure material is formed as a channel part in a thin film transistor; forming an active layer using the nano-structure material; determining a nominal channel length of a channel part of the thin film transistor based on the monotonic relationship and a reference threshold voltage so that the thin film transistor is formed to have a nominal threshold voltage; and forming a source electrode and a drain electrode thereby forming the channel part in the active layer having the nominal channel length.
    Type: Application
    Filed: August 13, 2018
    Publication date: June 11, 2020
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., PEKING UNIVERSITY
    Inventors: Hu Meng, Xuelei Liang, Jiye Xia, Boyuan Tian, Guodong Dong, Qi Huang