Abstract: A production device for preparing a building material using a fine particle silt in iron tailings includes an operation desk and a grinding device. During movement of edge plates, gears are located inside a side groove and keep meshing with toothed grooves, the edge plates will drive various gears to rotate along a same direction and drive grinding balls and connecting shafts to rotate while moving, the grinding balls will perform grinding treatment on the fine particle silt at the inner end of the grinding cabinet while rotating.

Abstract: The present invention relates to the field of elevator braking, in particular to an action state detection method and system for an elevator brake, comprising: acquiring matching pairs of brake linings in the same braking state; constructing normal record data sets based on the matching pairs; grouping the normal record data sets based on braking power corresponding to samples in the normal record data sets to determine a median of elevator running speed corresponding to the samples in each group; dividing the operating state levels of the elevator brake according to the size of the median; constructing a data training set; training a constructed network model to obtain a trained network model; acquiring the operating state levels of an elevator to be detected by the trained network model, evaluating the elevator brake according to the operating state levels, and controlling the elevator.

Abstract: A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body, the method comprising: focusing a first CO2 laser beam the coating via a CO2 focusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed; focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; scanning, by the second CO2 laser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second CO2 laser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels.

Abstract: A laser processing method for a sapphire includes: acquiring an image of the sapphire during processing; performing an edge detection to the image to acquire a coordinate of a crack; determining an offset parameter according to the coordinate of the crack; adjusting a laser processing position according to the offset parameter; and further processing the sapphire in accordance with the adjusted laser processing position.

Abstract: A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body, the method comprising: focusing a first CO2 laser beam the coating via a CO2 focusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed; focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; scanning, by the second CO2 laser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second CO2 laser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels.

Abstract: A laser processing method for a sapphire includes: acquiring an image of the sapphire during processing; performing an edge detection to the image to acquire a coordinate of a crack; determining an offset parameter according to the coordinate of the crack; adjusting a laser processing position according to the offset parameter; and further processing the sapphire in accordance with the adjusted laser processing position.