Patents by Inventor GuoFang XUAN

GuoFang XUAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of depositing the metal barrier layer comprising silicon dioxide
    Patent number: 8956937
    Abstract: The present invention discloses to a method of depositing the metal barrier layer comprising silicon dioxide. It is applied in the transistor device comprising a silicon substrate, a gate and a gate side wall. The method comprises the following steps: ions are implanted into the silicon substrate to form an active region in the said silicon substrate; a first dense silicon dioxide film is deposited; a second normal silicon dioxide film is deposited; the said transistor device is high temperature annealed. The present invention ensures that the implanted ion is not separated out of the substrate during the annealing. And it prevents the warping and fragment of the silicon surface.
    Type: Grant
    Filed: November 1, 2013
    Date of Patent: February 17, 2015
    Assignee: Shanghai Huali Microelectronics Corporation
    Inventors: GuoFang Xuan, Fei Luo
  • METHOD OF DEPOSITING THE METAL BARRIER LAYER COMPRISING SILICON DIOXIDE
    Publication number: 20140273364
    Abstract: The present invention discloses to a method of depositing the metal barrier layer comprising silicon dioxide. It is applied in the transistor device comprising a silicon substrate, a gate and a gate side wall. The method comprises the following steps: ions are implanted into the silicon substrate to form an active region in the said silicon substrate; a first dense silicon dioxide film is deposited; a second normal silicon dioxide film is deposited; the said transistor device is high temperature annealed. The present invention ensures that the implanted ion is not separated out of the substrate during the annealing. And it prevents the warping and fragment of the silicon surface.
    Type: Application
    Filed: November 1, 2013
    Publication date: September 18, 2014
    Applicant: Shanghai Huali Microelectronics Corporation
    Inventors: GuoFang XUAN, Fei Luo