Abstract: A semiconductor memory device includes a substrate having a first interlayer dielectric layer thereon; a lower metal interconnect layer in the first interlayer dielectric layer; a conductive via disposed on the lower metal interconnect layer; a bottom electrode disposed on the conductive via; a dielectric data storage layer having variable resistance disposed on the bottom electrode; a top electrode disposed on the dielectric data storage layer; and a protective layer covering sidewalls of the top electrode, the dielectric data storage layer, and the bottom electrode. The protective layer includes an annular, upwardly protruding portion around a perimeter of the top electrode.

Abstract: A semiconductor memory device includes a substrate having a first interlayer dielectric layer thereon; a lower metal interconnect layer in the first interlayer dielectric layer; a conductive via disposed on the lower metal interconnect layer; a bottom electrode disposed on the conductive via; a dielectric data storage layer having variable resistance disposed on the bottom electrode; a top electrode disposed on the dielectric data storage layer; and a protective layer covering sidewalls of the top electrode, the dielectric data storage layer, and the bottom electrode. The protective layer includes an annular, upwardly protruding portion around a perimeter of the top electrode.

Abstract: A semiconductor memory device includes a substrate having a first interlayer dielectric layer thereon; a lower metal interconnect layer in the first interlayer dielectric layer; a conductive via disposed on the lower metal interconnect layer; a bottom electrode disposed on the conductive via; a dielectric data storage layer having variable resistance disposed on the bottom electrode; a top electrode disposed on the dielectric data storage layer; and a protective layer covering sidewalls of the top electrode, the dielectric data storage layer, and the bottom electrode. The protective layer includes an annular, upwardly protruding portion around a perimeter of the top electrode.

Abstract: A transistor structure with an air gap includes a substrate. A transistor is disposed on the substrate. An etching stop layer covers and contacts the transistor and the substrate. A first dielectric layer covers and contacts the etching stop layer. A second dielectric layer covers the first dielectric layer. A trench is disposed on the gate structure and within the first dielectric layer and the second dielectric layer. A width of the trench within the second dielectric layer is smaller than a width of the trench within the first dielectric layer. A filling layer is disposed within the trench and covers the top surface of the second dielectric layer. An air gap is formed within the filling layer.

Abstract: A transistor structure with an air gap includes a substrate. A transistor is disposed on the substrate. An etching stop layer covers and contacts the transistor and the substrate. A first dielectric layer covers and contacts the etching stop layer. A second dielectric layer covers the first dielectric layer. A trench is disposed on the gate structure and within the first dielectric layer and the second dielectric layer. A width of the trench within the second dielectric layer is smaller than a width of the trench within the first dielectric layer. A filling layer is disposed within the trench and covers the top surface of the second dielectric layer. An air gap is formed within the filling layer.

Abstract: A transistor structure with an air gap includes a substrate. A transistor is disposed on the substrate. An etching stop layer covers and contacts the transistor and the substrate. A first dielectric layer covers and contacts the etching stop layer. A second dielectric layer covers the first dielectric layer. A trench is disposed on the gate structure and within the first dielectric layer and the second dielectric layer. A width of the trench within the second dielectric layer is smaller than a width of the trench within the first dielectric layer. A filling layer is disposed within the trench and covers the top surface of the second dielectric layer. An air gap is formed within the filling layer.

Abstract: A device for reducing pressure fluctuation of a pressure filter frame and a pressure filter. The device includes a pressure filter frame that is a cylindrical housing. An inner wall of the pressure filter frame is further provided with a buffer plate. A plurality of openings are provided in the buffer plate. A gap is remained between the buffer plate and the inner wall of the pressure filter frame. A plurality of supporting posts are disposed in the gap, which fixedly connect the inner wall of the pressure filter frame with the buffer plate.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A device wafer having a product-obtaining part and an edge part surrounding the product-obtaining part is provided. A passivation layer is formed to cover the device wafer. A first oxide cap layer is formed to cover the passivation layer. An edge trimming process is performed to polish an edge part of the first oxide cap layer, an edge part of the passivation layer and the edge part of the device wafer. A removing process is performed to remove the first oxide cap layer after the edge trimming process is performed. A second oxide cap layer is formed to cover the first oxide cap layer and the edge part of the device wafer.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A device wafer having a product-obtaining part and an edge part surrounding the product-obtaining part is provided. A passivation layer is formed to cover the device wafer. A first oxide cap layer is formed to cover the passivation layer. An edge trimming process is performed to polish an edge part of the first oxide cap layer, an edge part of the passivation layer and the edge part of the device wafer. A removing process is performed to remove the first oxide cap layer after the edge trimming process is performed. A second oxide cap layer is formed to cover the first oxide cap layer and the edge part of the device wafer.

Abstract: A method of forming a semiconductor device includes following steps. Firstly, a substrate is provided and the substrate has a first semiconductor layer formed thereon. Next, an isolating structure is formed in the first semiconductor layer, and a sacrificial layer is formed on the first semiconductor layer by consuming a top portion of the first semiconductor layer. Then, the sacrificial layer is removed to form a second semiconductor layer, and a portion of the isolating structure is also removed to form a shallow trench isolation (STI), with a top surface of the shallow trench isolation being substantially coplanar with a top surface of the second semiconductor layer.

Abstract: A testing device, a testing method, and a design method for a rotary pressure filter. The device includes a stabilizer tank; a buffer tank connected to the stabilizer tank; a filter frame disposed beneath the buffer tank, and connected to the buffer tank; a liquid receiving tank disposed beneath the filter frame; an electronic balance disposed at bottom of the liquid receiving tank; and a seconds counter. The testing method includes adding a certain calculated amount of testing slurry into the filter frame, introducing a gas with a certain pressure into the stabilizer tank, filling the filter frame through the buffer tank, opening a valve at bottom of the filter frame, measuring a mass of the expelled filtrate expelled from the filter frame, measuring time of the filtering process, sampling and analyzing the filter cake and the expelled filtrate according to actual needs; and perform cleaning and drying processes sequentially.

Abstract: A method of forming a semiconductor device includes following steps. Firstly, a substrate is provided and the substrate has a first semiconductor layer formed thereon. Next, an isolating structure is formed in the first semiconductor layer, and a sacrificial layer is formed on the first semiconductor layer by consuming a top portion of the first semiconductor layer. Then, the sacrificial layer is removed to form a second semiconductor layer, and a portion of the isolating structure is also removed to form a shallow trench isolation (STI), with a top surface of the shallow trench isolation being substantially coplanar with a top surface of the second semiconductor layer.

Abstract: The present invention relates to a method for processing acetic acid solvent in Crude Terephthalic Acid (CTA) in an oxidized unit of a pure terephthalic acid (PTA) industrial apparatus. In the present invention, a filter cake in CTA is washed by means of a two-stage-three-step method. The present invention further shortens the production process of solvent exchanging technique of CTA pressure filters, improves production capacity of a device, reduces investment of the device, reduces energy consumption of a system, and solves the shortcomings of the existing CTA solvent exchanging technique of the pressure filters.

Abstract: A device for reducing pressure fluctuation of a pressure filter frame and a pressure filter. The device includes a pressure filter frame that is a cylindrical housing. An inner wall of the pressure filter frame is further provided with a buffer plate. A plurality of openings are provided in the buffer plate. A gap is remained between the buffer plate and the inner wall of the pressure filter frame. A plurality of supporting posts are disposed in the gap, which fixedly connect the inner wall of the pressure filter frame with the buffer plate.

Abstract: The present invention relates to a method for processing acetic acid solvent in Crude Terephthalic Acid (CTA) in an oxidized unit of a pure terephthalic acid (PTA) industrial apparatus. In the present invention, a filter cake in CTA is washed by means of a two-stage-three-step method. The present invention further shortens the production process of solvent exchanging technique of CTA pressure filters, improves production capacity of a device, reduces investment of the device, reduces energy consumption of a system, and solves the shortcomings of the existing CTA solvent exchanging technique of the pressure filters.

Abstract: The present invention relates to a rotary pressure filter testing apparatus, a testing method and a design method thereof. The apparatus comprises a stabilizer tank; a buffer tank connected to the stabilizer tank; a filter frame disposed beneath the buffer tank, and connected to the buffer tank; a liquid receiving tank disposed beneath the filter frame; an electronic balance disposed at bottom of the liquid receiving tank; and a seconds counter. The testing method is to add a certain amount of calculated testing tank into the filter frame, then introduce a gas with a certain pressure into the stabilizer tank, fill the filter frame through the buffer tank, then open a valve at bottom of the filter frame, measure a mass of discharged mother liquid in the filter frame, measure time of the filtering process, and sample and analyze the filtered filter cake and the mother liquid according to actual needs; subsequently, perform cleaning and drying processes sequentially according to such method.

Abstract: A solvent exchanger and a method is provided for: pressurizing a CTA slurry into a solvent exchanger for separation and obtaining a mother liquor, a bias flow mother liquor and a suspended matter A; washing the suspended matter A to obtain a primary filtrate, a bias flow primary filtrate and a suspended matter B; washing the suspended matter B to obtain a secondary filtrate, a bias flow secondary filtrate and a suspended matter C; washing the suspended matter C to obtain a tertiary filtrate, a bias flow tertiary filtrate and a suspended matter D; washing the suspended matter D to obtain a fourth filtrate, a bias flow fourth filtrate and a suspended matter E; washing the suspended matter E to obtain a fifth filtrate, a bias flow fifth filtrate and a filter cake; and after finished, back-flushing the filter cake and then pulping to obtain a slurry, and discharging.

Abstract: The present invention relates to a method for processing acetic acid solvent in an oxidizing unit of a PTA industrial apparatus; said method uses a pressure filter machine to filter crude terephthalic acid slurry, and then, using a multi-stage counter-current method, uses washing water to wash the acetic acid solvent, and, by means of setting up a bias-current and drainage, prevents residual liquid in the filtrate pipe from entering the next area following the rotation of the pressure filter machine, improving washing efficiency and reducing the amount of washing water; the present invention integrates the processes of filtering and washing crude terephthalic acid into a single pressure filter machine, such that the process is shorter, the occupied floor space is reduced, and energy consumption is lower. A method feeding nitrogen gas into the mother liquor tank and washing liquid tank is used to regulate the pressure balance of the system.

Abstract: A solvent exchanger and a method is provided for: pressurizing a CTA slurry into a solvent exchanger for separation and obtaining a mother liquor, a bias flow mother liquor and a suspended matter A; washing the suspended matter A to obtain a primary filtrate, a bias flow primary filtrate and a suspended matter B; washing the suspended matter B to obtain a secondary filtrate, a bias flow secondary filtrate and a suspended matter C; washing the suspended matter C to obtain a tertiary filtrate, a bias flow tertiary filtrate and a suspended matter D; washing the suspended matter D to obtain a fourth filtrate, a bias flow fourth filtrate and a suspended matter E; washing the suspended matter E to obtain a fifth filtrate, a bias flow fifth filtrate and a filter cake; and after finished, back-flushing the filter cake and then pulping to obtain a slurry, and discharging.

Abstract: The present invention relates to a method for processing acetic acid solvent in an oxidising unit of a PTA industrial apparatus; said method uses a pressure filter machine to filter crude terephthalic acid slurry, and then, using a multi-stage counter-current method, uses washing water to wash the acetic acid solvent, and, by means of setting up a bias-current and drainage, prevents residual liquid in the filtrate pipe from entering the next area following the rotation of the pressure filter machine, improving washing efficiency and reducing the amount of washing water; the present invention integrates the processes of filtering and washing crude terephthalic acid into a single pressure filter machine, such that the process is shorter, the occupied floor space is reduced, and energy consumption is lower. A method feeding nitrogen gas into the mother liquor tank and washing liquid tank is used to regulate the pressure balance of the system.