Abstract: A semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the conductive crystalline metal layer. The conductive oxide layer has a low resistance. The semiconductor device also includes a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, the MTJ including a tunnel barrier layer, a free layer on a first side of the tunnel barrier layer and a reference layer on a second side of the tunnel barrier layer opposite the first side.

Abstract: A magnetic tunnel junction device is provided. The magnetic tunnel junction device includes a seed layer, and a free layer structure on the seed layer. The free layer structure includes a first free layer, a spacer layer formed on the first free layer, and a second free layer formed on the spacer layer. The first and second free layers each include an ordered magnetic alloy.

Abstract: Embodiments of present invention provide a magnetoresistive random-access-memory (MRAM). The MRAM includes a reference layer; a tunnel barrier layer of magnesium-oxide (MgO); and a free layer, where the free layer includes a first cobalt-iron-boron (CoFeB) layer on top of the tunnel barrier layer; a spacer layer on top of the first CoFeB layer; a second CoFeB layer on top of the spacer layer; and a capping layer of MgO on top of the second CoFeB layer. Additionally, the first and the second CoFeB layer are substantially depleted of boron (B) to include respectively a first region adjacent to the tunnel barrier layer and the capping layer respectively and a second region adjacent to the spacer layer, where the first regions of the first and the second CoFeB layer include crystallized cobalt-iron (CoFe) and the second regions of the first and the second CoFeB layer include amorphous CoFe alloy.

Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.

Abstract: A memory device including a pedestal structure containing a cobalt aluminum layer and a magnesium-aluminum-oxide containing base layer both of which have a (001) crystal orientation is provided. The memory device further includes a magnetic tunnel junction (MTJ) pillar containing an ordered alloy forming an interface with the cobalt aluminum alloy layer. The use of the structural and textural engineered pedestal structure provides improved control of resistance, as well as improved magnetic properties such as higher tunnel magnetoresistance (TMR) and higher perpendicular magnetic anisotropy (PMA), and closer distribution of the ordered alloy.

Abstract: A magnetoresistive random access memory (MRAM) including spin-transfer torque (STT) MRAM is provided that has enhanced data retention. The enhanced data retention is provided by constructing a MTJ pillar having a temperature-independent Delta, where Delta is Delta=Eb/kt, wherein Eb is the activation energy, k is the Boltzmann's constant, and T is the absolute temperature. Notably, the present application provides a way for EB to actually increase with temperature, which can cancel the effect of the term KT, resulting in a temperature independent Delta.

Abstract: A magnetic tunnel junction (MTJ) stack structure includes a reference layer; a tunnel barrier; and a free layer that comprises three distinct materials. All of the three distinct materials in the free layer are magnetic material. One of the three distinct materials in the free layer is a C38 structure alloy.

Abstract: A modified double magnetic tunnel junction (mDMTJ) structure is provided which includes a narrow base and the use of a spin diffusion layer (i.e., non-magnetic, spin-conducting metallic layer) which gives a low resistance-area product (RA) for the tunnel barrier layer that forms an interface with the spin diffusion layer.

Abstract: Magnetic tunnel junction pillars including ordered alloy, bottom free layers are formed using simplified seed structures including textured magnesium oxide. The seed structures can have relatively small thicknesses, thereby reducing roughness of layers formed above the seed structures and facilitating magnetic tunnel junction pillar formation from multi-layer films including such seed structures.

Abstract: A semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the conductive crystalline metal layer. The conductive oxide layer has a low resistance. The semiconductor device also includes a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, the MTJ including a tunnel barrier layer, a free layer on a first side of the tunnel barrier layer and a reference layer on a second side of the tunnel barrier layer opposite the first side.

Abstract: A memory structure, i.e., magnetoresistive random access memory (MRAM) structure, is provided that includes a seeding area including at least a tunnel barrier seed layer located beneath a chemical templating layer that is wider than the magnetic tunnel junction (MTJ) structure that is located on the chemical templating layer. Redeposited metallic material is located on at least a sidewall of the tunnel barrier seed layer of the seeding area so as to shunt that area of the structure. The memory structure has reduced resistance with minimal tunnel magnetoresistance (TMR) loss penalty.

Abstract: A memory structure, i.e., magnetoresistive random access memory (MRAM) structure, is provided that includes a seeding area including at least a tunnel barrier seed layer located beneath a chemical templating layer that is wider than the magnetic tunnel junction (MTJ) structure that is located on the chemical templating layer. Redeposited metallic material is located on at least a sidewall of the tunnel barrier seed layer of the seeding area so as to shunt that area of the structure. The memory structure has reduced resistance with minimal tunnel magnetoresistance (TMR) loss penalty.

Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the first magnetic free layer is composed of an ordered magnetic alloy. The ordered magnetic alloy provides a first magnetic free layer that has low moment, but is strongly magnetic. The use of such an ordered magnetic alloy first magnetic free layer in a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers.

Abstract: A method for forming a memory device that includes providing a free layer of an alloy of cobalt (Co), iron (Fe) and boron (B) overlying a reference layer; and forming metal layer comprising a boron (B) sink composition atop the free layer. Boron (B) may be diffused from the free layer to the metal layer comprising the boron sink composition. At least a portion of the metal layer including the boron (B) sink composition is removed. A metal oxide is formed atop the free layer. The free layer may be a crystalline cobalt and iron alloy. An interface between the metal oxide and free layer can provide perpendicular magnetic anisotropy character.

Abstract: A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. Such a modified double magnetic tunnel junction structure exhibits efficient switching (at a low current) and speedy readout (high tunnel magnetoresistance).

Abstract: A modified double magnetic tunnel junction (mDMTJ) structure is provided which includes a narrow base and the use of a spin diffusion layer (i.e., non-magnetic, spin-conducting metallic layer) which gives a low resistance-area product (RA) for the tunnel barrier layer that forms an interface with the spin diffusion layer.

Abstract: A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. Such a modified double magnetic tunnel junction structure exhibits efficient switching (at a low current) and speedy readout (high tunnel magnetoresistance).

Abstract: A planar magnetic structure includes a closed loop structure having a plurality of core segments divided into at least two sets. A coil is formed about one or more core segments. A first antiferromagnetic layer is formed on a first set of core segments, and a second antiferromagnetic layer is formed on a second set of core segments. The first and second antiferromagnetic layers include different blocking temperatures and have an easy axis pinning a magnetic moment in two different directions, wherein when current flows through the coil, the magnetic moments rotate to form a closed magnetic loop in the closed loop structure.

Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has a lower perpendicular magnetic anisotropy field, Hk, as compared with the first magnetic free layer. The multilayered magnetic free layer structure of the present application substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers. The lower Hk value of the second magnetic free layer as compared to the first magnetic free layer improves the switching speed of the second magnetic free layer and thus reduces, and even eliminates, write errors.

Abstract: A bottom pinned magnetic tunnel junction (MTJ) stack having improved switching performance is provided which can be used as a component/element of a spin-transfer torque magnetoresistive random access memory (STT MRAM) device. The improved switching performance which, in turn, can reduce write errors and improve write voltage distributions, is obtained by inserting at least one heavy metal-containing layer into the magnetic free layer and/or by forming a heavy metal-containing layer on a MTJ capping layer that is located above the magnetic free layer.