Patents by Inventor GUOHUI CAI

GUOHUI CAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and fabrication method thereof
    Patent number: 9646830
    Abstract: According to a semiconductor structure fabrication method, a semiconductor substrate having gate structures is provided. Sidewalls of the gate structures may be covered by a spacer layer. An epitaxy process is performed to form a semiconductor epitaxial material layer covering the gate structures, the spacer layer, and the semiconductor substrate. Then, an etching process is performed to form a first semiconductor epitaxial layer on the semiconductor substrate at the two sides of the gate structures. Further, a selective epitaxy process is performed by using a deposition gas and an etching gas, forming a second semiconductor epitaxial layer. The formed second semiconductor epitaxial layer may repair or compensate the first semiconductor epitaxial layer along the horizontal direction. The epitaxy process, the etching process, and the selective epitaxy process are repeated successively to form elevated source/drain regions. The formed elevated source/drain regions may have a flat top surface without any angles.
    Type: Grant
    Filed: April 20, 2015
    Date of Patent: May 9, 2017
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: Guohui Cai
  • SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
    Publication number: 20150318364
    Abstract: According to a semiconductor structure fabrication method, a semiconductor substrate having gate structures is provided. Sidewalls of the gate structures may be covered by a spacer layer. An epitaxy process is performed to form a semiconductor epitaxial material layer covering the gate structures, the spacer layer, and the semiconductor substrate. Then, an etching process is performed to form a first semiconductor epitaxial layer on the semiconductor substrate at the two sides of the gate structures. Further, a selective epitaxy process is performed by using a deposition gas and an etching gas, forming a second semiconductor epitaxial layer. The formed second semiconductor epitaxial layer may repair or compensate the first semiconductor epitaxial layer along the horizontal direction. The epitaxy process, the etching process, and the selective epitaxy process are repeated successively to form elevated source/drain regions. The formed elevated source/drain regions may have a flat top surface without any angles.
    Type: Application
    Filed: April 20, 2015
    Publication date: November 5, 2015
    Inventor: GUOHUI CAI