Abstract: The present disclosure is directed to a reticle assembly having a reticle and a pellicle attached to a pellicle support frame positioned on the reticle and includes a sensor assembly having optical and sensor components, which monitor the pellicle. The optical components and the sensor components of the sensor assembly may be coupled to a controller, which may be further coupled to one or more semiconductor process tools.

Abstract: Embodiments disclosed herein include EUV reticles and methods of forming such reticles. In an embodiment a method of forming an EUV reticle comprises providing a reticle, where the reticle comprises, a substrate, a mirror layer over the substrate, where the mirror layer comprises a plurality of first mirror layers and second mirror layers in an alternating pattern, and a capping layer over the mirror layer. In an embodiment, the method may further comprise disposing a first layer over the capping layer, patterning an opening in the first layer, and disposing a second layer in the opening, where the second layer is disposed with an electroless deposition process.

Abstract: A workpiece exchange device, including: a workpiece spindle; and a workpiece library, wherein: the workpiece spindle is arranged on a pallet, the pallet is arranged on a slide table, the pallet can move along a Z axis of a machine tool, and the slide table can move along an X axis of the machine tool; and the workpiece library is used to store workpieces, and the workpiece spindle can move along the X-axis and Z-axis of the machine tool and grab a workpiece. The present invention also discloses a method for exchanging workpieces. Through the coordinated movement of the slide table and the pallet, the workpiece spindle can take out a workpiece to be machined from the workpiece library or return a machined workpiece into the workpiece library. The present invention uses a machine tool coordinate system to grab the workpiece with high precision and high speed, and does not need to add an auxiliary mechanism, and has the advantages of simple structure, high stability and good reliability.

Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.

Abstract: Embodiments described herein comprise extreme ultraviolet (EUV) reticles and methods of forming EUV reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer comprises a plurality of alternating first mirror layers and second mirror layers. In an embodiment, a phase-shift layer is formed over the mirror layer. In an embodiment, openings for printable features and openings for non-printable features are formed into the phase-shift layer. In an embodiment, the non-printable features have a dimension that is smaller than a dimension of the printable features.

Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.

Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.

Abstract: Embodiments disclosed herein include EUV reticles and methods of forming such reticles. In an embodiment a method of forming an EUV reticle comprises providing a reticle, where the reticle comprises, a substrate, a mirror layer over the substrate, where the mirror layer comprises a plurality of first mirror layers and second mirror layers in an alternating pattern, and a capping layer over the mirror layer. In an embodiment, the method may further comprise disposing a first layer over the capping layer, patterning an opening in the first layer, and disposing a second layer in the opening, where the second layer is disposed with an electroless deposition process.

Abstract: Embodiments disclosed herein include reticles for extreme ultraviolet (EUV) lithography and methods of forming such reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer includes alternating layers of a first mirror layer and a second mirror layer. In an embodiment, a fiducial may be formed into the mirror layer. In an embodiment, the fiducial comprises constituents of the first mirror layer and the second mirror layer. In an embodiment, an absorber layer may be formed over the mirror layer.

Abstract: Embodiments described herein comprise extreme ultraviolet (EUV) reticles and methods of forming EUV reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer comprises a plurality of alternating first mirror layers and second mirror layers. In an embodiment, a phase-shift layer is formed over the mirror layer. In an embodiment, openings for printable features and openings for non-printable features are formed into the phase-shift layer. In an embodiment, the non-printable features have a dimension that is smaller than a dimension of the printable features.

Abstract: The present application provides a light guide plate with annular microprism structures and its manufacturing method. The method includes the following steps: A) processing a diamond turning tool of a desired shape according to a shape of a second annular microprism of a light guide plate to be processed; B) turning a surface of a light guide plate mold core by the diamond turning tool, and processing the surface of the light guide plate mold core to form first annular microgrooves, wherein a first annular microprism is formed between two adjacent first annular microgrooves; and C) feeding an acrylic powder material to the light guide plate mold core finished in step B) in an injection molding machine, and performing micro-injection molding to form a light guide plate with second annular microprisms.

Abstract: The present invention discloses an EUV mask having an improved absorber layer with a certain thickness that is formed from a metal and a nonmetal in which the ratio of the metal to the nonmetal changes through the thickness of the improved absorber layer and a method of forming such an EUV mask.

Abstract: An extreme ultraviolet light (EUV) mask structure and method are disclosed to address the structural and processing requirements of EUV lithography. A mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a thin ruthenium layer, to produce a mask obviating the need for a conventional buffer or cap layer.

Abstract: An extreme ultraviolet light (EUV) mask structure and method are disclosed to address the structural and processing requirements of EUV lithography. A mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a thin ruthenium layer, to produce a mask obviating the need for a conventional buffer or cap layer.

Abstract: The present invention discloses a method of increasing the contrast of an EUV mask at inspection by forming a multilayer mirror over a substrate; forming an absorber layer over the multilayer mirror; forming a top layer over the absorber layer; patterning the mask into a first region and a second region; and removing the top layer and the absorber layer in the first region.

Abstract: The present invention discloses an EUV mask having an improved absorber layer with a certain thickness that is formed from a metal and a nonmetal in which the ratio of the metal to the nonmetal changes through the thickness of the improved absorber layer and a method of forming such an EUV mask.

Abstract: The present invention discloses a method of increasing the contrast of an EUV mask at inspection by forming a multilayer mirror over a substrate; forming an absorber layer over the multilayer mirror; forming a top layer over the absorber layer; patterning the mask into a first region and a second region; and removing the top layer and the absorber layer in the first region.

Abstract: The present invention discloses an EUV mask having an improved absorber layer with a certain thickness that is formed from a metal and a nonmetal in which the ratio of the metal to the nonmetal changes through the thickness of the improved absorber layer and a method of forming such an EUV mask.

Abstract: The present invention discloses a method of increasing the contrast of an EUV mask at inspection by forming a multilayer mirror over a substrate; forming an absorber layer over the multilayer mirror; forming a top layer over the absorber layer; patterning the mask into a first region and a second region; and removing the top layer and the absorber layer in the first region.

Abstract: The present invention discloses a method of increasing the contrast of an EUV mask at inspection by forming a multilayer mirror over a substrate; forming an absorber layer over the multilayer mirror; forming a top layer over the absorber layer; patterning the mask into a first region and a second region; and removing the top layer and the absorber layer in the first region.