Patents by Inventor Guojing Zhang

Guojing Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11007196
    Abstract: A method for preparing a composition of matter, the method including: 1) mixing a Zn(NO3)2 solution, a Hg(NO3)2 solution, and a mercaptopropionic acid solution, thereby yielding a precursor solution of Zn2+—Hg2+-mercaptopropionic acid; dissolving a selenium powder and a NaBH4 solid in water thereby yielding a NaHSe slurry; mixing the precursor solution and the NaHSe slurry thereby yielding zinc-mercury-selenium (ZnHgSe) quantum dot; 2) preparing a drug delivery system including dextran-magnetic layered double hydroxide-fluorouracil (DMF); binding the drug delivery system and the ZnHgSe quantum dot in a mass ratio of 1:1-3; and grinding the drug delivery system including the ZnHgSe quantum dot (QD) thereby yielding powders; and 3) dissolving the powders in absolute ethyl alcohol thereby yielding a first suspension; ultrasonically dispersing the first suspension thereby yielding a second suspension, magnetically separating the second suspension thereby yielding a solid product, centrifuging and washing the soli
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: May 18, 2021
    Assignee: NINGXIA MEDICAL UNIVERSITY
    Inventors: Guojing Gou, Xueqin Jin, Rui Wang, Qinyu Pei, Huiqin Yao, Yumei Zhang, Lingxia Zuo
  • Publication number: 20210026234
    Abstract: Embodiments disclosed herein include EUV reticles and methods of forming such reticles. In an embodiment a method of forming an EUV reticle comprises providing a reticle, where the reticle comprises, a substrate, a mirror layer over the substrate, where the mirror layer comprises a plurality of first mirror layers and second mirror layers in an alternating pattern, and a capping layer over the mirror layer. In an embodiment, the method may further comprise disposing a first layer over the capping layer, patterning an opening in the first layer, and disposing a second layer in the opening, where the second layer is disposed with an electroless deposition process.
    Type: Application
    Filed: July 24, 2019
    Publication date: January 28, 2021
    Inventors: John MAGANA, Guojing ZHANG, Yang CAO
  • Publication number: 20200050097
    Abstract: Embodiments disclosed herein include reticles for extreme ultraviolet (EUV) lithography and methods of forming such reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer includes alternating layers of a first mirror layer and a second mirror layer. In an embodiment, a fiducial may be formed into the mirror layer. In an embodiment, the fiducial comprises constituents of the first mirror layer and the second mirror layer. In an embodiment, an absorber layer may be formed over the mirror layer.
    Type: Application
    Filed: August 9, 2018
    Publication date: February 13, 2020
    Inventors: John MAGANA, Guojing ZHANG
  • Publication number: 20200033736
    Abstract: Embodiments described herein comprise extreme ultraviolet (EUV) reticles and methods of forming EUV reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer comprises a plurality of alternating first mirror layers and second mirror layers. In an embodiment, a phase-shift layer is formed over the mirror layer. In an embodiment, openings for printable features and openings for non-printable features are formed into the phase-shift layer. In an embodiment, the non-printable features have a dimension that is smaller than a dimension of the printable features.
    Type: Application
    Filed: July 25, 2018
    Publication date: January 30, 2020
    Inventors: Robert BRISTOL, Guojing ZHANG, Tristan TRONIC, John MAGANA, Chang Ju CHOI, Arvind SUNDARAMURTHY, Richard SCHENKER
  • Publication number: 20190375135
    Abstract: The present application provides a light guide plate with annular microprism structures and its manufacturing method. The method includes the following steps: A) processing a diamond turning tool of a desired shape according to a shape of a second annular microprism of a light guide plate to be processed; B) turning a surface of a light guide plate mold core by the diamond turning tool, and processing the surface of the light guide plate mold core to form first annular microgrooves, wherein a first annular microprism is formed between two adjacent first annular microgrooves; and C) feeding an acrylic powder material to the light guide plate mold core finished in step B) in an injection molding machine, and performing micro-injection molding to form a light guide plate with second annular microprisms.
    Type: Application
    Filed: January 30, 2018
    Publication date: December 12, 2019
    Inventors: Yanjun LU, Xiaoyu WU, Chaolan ZHOU, Wen WU, Guojing ZHANG
  • Patent number: 6908714
    Abstract: The present invention discloses an EUV mask having an improved absorber layer with a certain thickness that is formed from a metal and a nonmetal in which the ratio of the metal to the nonmetal changes through the thickness of the improved absorber layer and a method of forming such an EUV mask.
    Type: Grant
    Filed: June 13, 2003
    Date of Patent: June 21, 2005
    Assignee: Intel Corporation
    Inventors: Pei-Yang Yan, Guojing Zhang
  • Patent number: 6905801
    Abstract: An extreme ultraviolet light (EUV) mask structure and method are disclosed to address the structural and processing requirements of EUV lithography. A mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a thin ruthenium layer, to produce a mask obviating the need for a conventional buffer or cap layer.
    Type: Grant
    Filed: December 28, 2002
    Date of Patent: June 14, 2005
    Assignee: Intel Corporation
    Inventors: Shoudeng Liang, Pei-Yang Yan, Guojing Zhang
  • Publication number: 20040126670
    Abstract: An extreme ultraviolet light (EUV) mask structure and method are disclosed to address the structural and processing requirements of EUV lithography. A mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a thin ruthenium layer, to produce a mask obviating the need for a conventional buffer or cap layer.
    Type: Application
    Filed: December 28, 2002
    Publication date: July 1, 2004
    Inventors: Shoudeng Liang, Pei-Yang Yan, Guojing Zhang
  • Patent number: 6720118
    Abstract: The present invention discloses a method of increasing the contrast of an EUV mask at inspection by forming a multilayer mirror over a substrate; forming an absorber layer over the multilayer mirror; forming a top layer over the absorber layer; patterning the mask into a first region and a second region; and removing the top layer and the absorber layer in the first region.
    Type: Grant
    Filed: April 25, 2003
    Date of Patent: April 13, 2004
    Assignee: Intel Corporation
    Inventors: Pei-Yang Yan, Ted Liang, Guojing Zhang
  • Publication number: 20030228530
    Abstract: The present invention discloses an EUV mask having an improved absorber layer with a certain thickness that is formed from a metal and a nonmetal in which the ratio of the metal to the nonmetal changes through the thickness of the improved absorber layer and a method of forming such an EUV mask.
    Type: Application
    Filed: June 13, 2003
    Publication date: December 11, 2003
    Inventors: Pei-Yang Yan, Guojing Zhang
  • Publication number: 20030203289
    Abstract: The present invention discloses a method of increasing the contrast of an EUV mask at inspection by forming a multilayer mirror over a substrate; forming an absorber layer over the multilayer mirror; forming a top layer over the absorber layer; patterning the mask into a first region and a second region; and removing the top layer and the absorber layer in the first region.
    Type: Application
    Filed: April 25, 2003
    Publication date: October 30, 2003
    Inventors: Pei-Yang Yan, Ted Liang, Guojing Zhang
  • Patent number: 6610447
    Abstract: The present invention discloses an EUV mask having an improved absorber layer with a certain thickness that is formed from a metal and a nonmetal in which the ratio of the metal to the nonmetal changes through the thickness of the improved absorber layer and a method of forming such an EUV mask.
    Type: Grant
    Filed: March 30, 2001
    Date of Patent: August 26, 2003
    Assignee: Intel Corporation
    Inventors: Pei-Yang Yan, Guojing Zhang
  • Patent number: 6583068
    Abstract: The present invention discloses a method of increasing the contrast of an EUV mask at inspection by forming a multilayer mirror over a substrate; forming an absorber layer over the multilayer mirror; forming a top layer over the absorber layer; patterning the mask into a first region and a second region; and removing the top layer and the absorber layer in the first region.
    Type: Grant
    Filed: March 30, 2001
    Date of Patent: June 24, 2003
    Assignee: Intel Corporation
    Inventors: Pei-Yang Yan, Ted Liang, Guojing Zhang
  • Publication number: 20020142230
    Abstract: The present invention discloses an EUV mask having an improved absorber layer with a certain thickness that is formed from a metal and a nonmetal in which the ratio of the metal to the nonmetal changes through the thickness of the improved absorber layer and a method of forming such an EUV mask.
    Type: Application
    Filed: March 30, 2001
    Publication date: October 3, 2002
    Inventors: Pei-Yang Yan, Guojing Zhang
  • Publication number: 20020142620
    Abstract: The present invention discloses a method of increasing the contrast of an EUV mask at inspection by forming a multilayer mirror over a substrate; forming an absorber layer over the multilayer mirror; forming a top layer over the absorber layer; patterning the mask into a first region and a second region; and removing the top layer and the absorber layer in the first region.
    Type: Application
    Filed: March 30, 2001
    Publication date: October 3, 2002
    Inventors: Pei-Yang Yan, Ted Liang, Guojing Zhang
  • Patent number: 5958629
    Abstract: A silicon-substrate based reflective photolithographic mask fabrication technique is described. The process begins with a multilayer, resonant reflecting substrate. A thin layer of silicon dioxide or other material capable of acting as an etch stop layer is deposited thereon. Then, a transmissive layer is deposited on the thin layer of etch stop layer. The transmissive layer is substantially transmissive to the wavelength of light used in the photolithography as well as capable of being selectively etched relative to the underlying etch stop layer. Then, the transmissive layer is etched to open preselected, absorptive areas. An absorptive layer is then deposited thereon. The absorptive layer is substantially absorptive to the wavelength of light used as well as capable of completely filling the opened areas of the transmissive layer. The absorptive layer is then planarized, and a thin protective cap is deposited thereon.
    Type: Grant
    Filed: December 22, 1997
    Date of Patent: September 28, 1999
    Assignee: Intel Corporation
    Inventors: Pei-Yang Yan, Guojing Zhang, Joseph Langston
  • Patent number: 5928817
    Abstract: A novel mask for photolithography in semiconductor processing and the mask fabrication method is disclosed. The mask includes a substrate, a patterned buffer layer, a patterned absorber layer above the patterned buffer layer, and a protective cap. The substrate preferably contains a multilayer resonant reflective surface. The buffer layer and protective cap are transmissive to the wavelength of light used in the photolithography. The absorber layer is absorptive to the wavelength of light used in the photolithography. The mask is fabricated by first depositing the buffer layer. The absorber layer is formed on the buffer layer. Both absorber layer and buffer layer are etched to create a pattern. A protective cap layer is then deposited on the patterned absorber layer and buffer layer, and the protective cap is planarized as needed to create a substantially smooth mask surface.
    Type: Grant
    Filed: December 22, 1997
    Date of Patent: July 27, 1999
    Assignee: Intel Corporation
    Inventors: Pei-Yang Yan, Guojing Zhang