Abstract: Disclosed is an efficiency analysis method for an intelligent interaction system, including: obtaining user information and behavior data generated during execution of user commands, and associating the user information with the behavior data to obtain associated data; preprocessing the associated data, selecting efficiency indicators for the intelligent interaction system based on standard indicators, and classifying the preprocessed associated data according to the efficiency indicators to obtain classified data; formulating efficiency scoring criteria based on expert opinions, and obtaining efficiency scores of the classified data by using the efficiency scoring criteria; and determining weights of the efficiency scores by using an objective weight assignment method, and evaluating the efficiency scores through fuzzy comprehensive evaluation based on the weights to obtain comprehensive scores.

Abstract: The present disclosure discloses a shielded insulating shell and an electronic device. The shielded insulating shell includes a shell body provided with a first cavity, with an inner shielding layer near the first cavity and an outer shielding layer far away from the first cavity being formed on the shell body; a first structure formed on the first cavity, and formed by assembling to comprise at least a first shielding layer, a first insulating layer, a first air gap layer, a second insulating layer, and a second shielding layer arranged sequentially from an inner side to an outer side of the first cavity; and an assembling gap formed on the first structure, which cooperates with the first air gap layer to form a creepage path on the first structure that extends from the inner shielding layer to the outer shielding layer.

Abstract: A separate confinement heterostructure includes a quantum-well layer bounded by an n-side waveguide layer and a p-side waveguide layer. The waveguide layers guide a lasing mode of the heterostructure. The n-side waveguide layer is composed of indium gallium phosphide (InGaP) and the p-side layer is composed of aluminum gallium arsenide (AlGaAs). The heterostructure is configured such that more than 80% of the optical mode propagates in the n-side waveguide layer.

Abstract: An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.

Abstract: An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.

Abstract: An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.

Abstract: An optical device includes a light emitting region which emits light at the wavelength of operation, the light emitting region includes at least one active region. An n-type conductivity contact region is positioned on one surface of the active region and a p-type conductivity contact region is positioned on an opposite surface. The p surface of a p/n tunnel junction is positioned on the opposite surface of the p-type conductivity contact region and an n-type conductivity contact region is positioned on the n surface. The light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.