Abstract: A signal processing method includes: obtaining a first detection signal corresponding to a first detection region, where the first detection signal includes a noise signal of the first detection region; and outputting indication information based on the first detection signal, where the indication information indicates that interference exists in the first detection region. According to the method, a proactive alarm function is implemented. The indication information indicates interference such that an alarm can be reported in time when interference occurs.

Abstract: The present disclosure relates to the field of tumor drug therapy, in particular to use of a methylaminocolchicine and salts thereof. The use includes use of a methylamino-substituted colchicine at C10 position and salts thereof in preparation of antitumor drugs, use thereof in antitumor drugs for antagonizing microtubule inhibitor resistance, or use thereof in combination an antitumor drug. In the present disclosure, the methylaminocolchicine and the salts thereof have significant antitumor effects, are more active than paclitaxel, vincristine, and colchicine, do not exhibit cross resistance to the paclitaxel and the vincristine, and inhibit paclitaxel-resistant cell growth in vivo. With in vivo acceptable therapeutic indexes, the methylaminocolchicine and the salts thereof have a synergistic antitumor effect when used in combination with an anti-apoptotic protein Bcl-2/Bcl-xL inhibitor.

Abstract: An apparatus for wafer bonding includes a first bearing table configured to hold a first wafer provided with at least one first alignment mark; a second bearing table, opposite to the first bearing table, and configured to hold a second wafer provided with at least one second alignment mark; an alignment component, located on at least a side of the first or second bearing table, and configured to determine first and second position parameters of the first and second alignment marks, respectively, by using an optical beam; a mobile component, connected to the first and second bearing tables, and configured to adjust, according to the first an second position parameters, a relative position between the first and second wafers until a relative position between the first and second alignment marks satisfies a predetermined bonding condition; and a bonding component, connected to the first and second bearing tables, and configured to bond the first wafer to the second wafer.

Abstract: A semiconductor structure includes a first semiconductor structure and a second semiconductor structure. The method of bonding a semiconductor structure includes performing a surface treatment on a first surface of the first semiconductor structure and a second surface of the second semiconductor structure based on a first gas and a second gas. The first gas excites at least one of the first surface or the second surface to generate a free radical. The second gas is excited to generate a plasma gas. A free negative ion in the plasma gas is combined with the free radical. The method also includes performing a face-to-face bonding on the first surface and the second surface.

Abstract: A method and apparatus for wafer bonding. The method includes that, a first position parameter of a first alignment mark on a first wafer is determined by using a optical beam; a second position parameter of a second alignment mark on a second wafer is determined with the optical beam, the optical beam has a property of transmitting through a wafer; a relative position between the first wafer and the second wafer is adjusted with the optical beam according to the first position parameter and the second position parameter until the relative position between the first alignment mark and the second alignment mark satisfies a predetermined bonding condition; and the first wafer is bonded to the second wafer.

Abstract: A photodetector with an integrated reflective grating structure includes a substrate, an active layer disposed on the substrate, and a grating structure disposed between the substrate and the active layer. A first doped region is formed on the substrate at a location near the grating structure. A second doped region is formed on a surface of the active layer away from the grating structure. The doping type of the second doped region is different from that of the first doped region.

Abstract: A method and apparatus for wafer bonding are provided. The method includes: determining a first position parameter of a first alignment mark on a first wafer and a second position parameter of a second alignment mark on a second wafer by using a first type of optical beam; moving the first wafer and the second wafer to be opposite to each other by changing a relative position between the first wafer and the second wafer according to the first position parameter and the second position parameter, to achieve a first alignment of the first alignment mark and the second alignment mark; adjusting the relative position between the first wafer and the second wafer by using a second type of optical beam, to achieve a second alignment of the first alignment mark and the second alignment mark; and bonding the first wafer to the second wafer.

Abstract: A method and apparatus for wafer bonding. The method includes that, a first position parameter of a first alignment mark on a first wafer is determined by using a optical beam; a second position parameter of a second alignment mark on a second wafer is determined with the optical beam, the optical beam has a property of transmitting through a wafer; a relative position between the first wafer and the second wafer is adjusted with the optical beam according to the first position parameter and the second position parameter until the relative position between the first alignment mark and the second alignment mark satisfies a predetermined bonding condition; and the first wafer is bonded to the second wafer.

Abstract: Embodiments provide a combustion structure that can achieve stable combustion by addressing the aforementioned drawbacks in the prior art such as low flame stability, backfire, deflagration, blockage and/or any other drawbacks. The combustion chamber structure in accordance with the disclosure can include: a grate structure including a first set of elongated components, a fire retention structure including a second set of elongated components. The first set of first elongated components can be arranged along an axial direction within the combustion chamber structure. The second set of elongated components can be arranged along the axial direction in a same direction as the first elongated components. The second set of elongated components can be configured to generate a negative pressure zone within the combustion chamber. The first set of elongated components can form apertures that can be aligned with apertures formed by the second set of elongated components.

Abstract: The present application discloses a search method and apparatus, which include specifically: after a search keyword is acquired, acquiring a search result of the search keyword with use of a fine ranking layer of a vertical search architecture if the search keyword is a keyword related to vertical search; processing a display effect of the search result with use of a business layer of the vertical search architecture to obtain a target search result; and transmitting the target search result to a display device. That is, in embodiments of the present application, a search result of a search keyword may be acquired with use of a fine ranking layer of a vertical search architecture, and 10 orders of magnitude of data can generally be searched at the fine ranking layer compared with a business layer, therefore, a more complete and accurate search result can be obtained.

Abstract: A data query method, an electronic device, and a storage medium are provided, and relate to the field of computer technologies, and in particular to the field of intelligent search. The method includes: determining an extraction location of target data according to a data query request; determining a data extraction strategy corresponding to the extraction location; and extracting the target data at the extraction location according to the data extraction strategy, and using the target data as a data query result. The above solution solves the technical problems of excessive system overhead and poor real-time performance in the existing deep paging mechanism.

Abstract: Embodiments of apparatus for flipping a semiconductor device and method of using the same are disclosed. In an example, an apparatus for flipping a semiconductor device includes at least one fixture and a rotation unit connected to the at least one fixture. The at least one fixture is configured to hold the semiconductor device by simultaneously pressing a first surface and a second surface of the semiconductor device. The first surface is opposite to the second surface. The rotation unit is configured to rotate the at least one fixture to flip the semiconductor device held by the at least one fixture.

Abstract: A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

Abstract: The present application discloses a search method and apparatus, which include specifically: after a search keyword is acquired, acquiring a search result of the search keyword with use of a fine ranking layer of a vertical search architecture if the search keyword is a keyword related to vertical search; processing a display effect of the search result with use of a business layer of the vertical search architecture to obtain a target search result; and transmitting the target search result to a display device. That is, in embodiments of the present application, a search result of a search keyword may be acquired with use of a fine ranking layer of a vertical search architecture, and 10 orders of magnitude of data can generally be searched at the fine ranking layer compared with a business layer, therefore, a more complete and accurate search result can be obtained.

Abstract: A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

Abstract: A method for forming a changeable mist of an aromatherapy machine and the aromatherapy machine are provided. A mist storage cavity with an upward opening is disposed on the aromatherapy machine, and a mist outlet of the aromatherapy machine communicates with an inner space of the mist storage cavity. When the aromatherapy machine generates an atomized vapor in an atomization chamber, the atomization chamber is provided with an internal air pressure higher than an atmospheric pressure, so that the atomized vapor is ejected outward at a different speed state based on a different internal air pressure, so as to form a different mist retention state. In a first configuration solution, the internal air pressure is controlled to be slightly higher than an external atmospheric pressure, so that the atomized vapor floats out in a slow surge manner, and that the atomized vapor is accumulated as a haze in the inner space.

Abstract: A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

Abstract: Embodiments of wafer bonding methods are disclosed. In an example, a first plasma activation treatment based on oxygen or an inert gas is performed on a front surface of a first wafer and a front surface of a second wafer. After the first plasma activation treatment, a second plasma activation treatment based on water molecules is performed on the front surface of the first wafer and the front surface of the second wafer. After the second plasma activation treatment, the first wafer and the second wafer are bonded such that the treated front surface of the first wafer is in physical contact with the treated front surface of the second wafer.

Abstract: A photodetector with an integrated reflective grating structure includes a substrate, an active layer disposed on the substrate, and a grating structure disposed between the substrate and the active layer. A first doped region is formed on the substrate at a location near the grating structure. A second doped region is formed on a surface of the active layer away from the grating structure. The doping type of the second doped region is different from that of the first doped region.

Abstract: Embodiments of wafer bonding methods are disclosed. In an example, a first plasma activation treatment based on oxygen or an inert gas is performed on a front surface of a first wafer and a front surface of a second wafer. After the first plasma activation treatment, a second plasma activation treatment based on water molecules is performed on the front surface of the first wafer and the front surface of the second wafer. After the second plasma activation treatment, the first wafer and the second wafer are bonded such that the treated front surface of the first wafer is in physical contact with the treated front surface of the second wafer.