Abstract: A class of erbium-doped silicate crystals have a general chemical formula of (ErxYbyCezA(1-x-y-z))3RM3Si2O14, in which the range of x is 0.002 to 0.02, y is 0.005 to 0.1, and z is 0 to 0.15; A is one, two or three elements selected from Ca, Sr, or Ba; R is one or two elements selected from Nb or Ta; M is one or two elements selected from Al or Ga. Using one of such crystals as a gain medium and a diode laser at 940 nm or 980 nm as a pumping source, a 1.5 ?m continuous-wave solid-state laser with high output power and high efficiency, as well as a pulse solid-state laser with high energy and narrow width can be obtained.

Abstract: A class of erbium-doped silicate crystals have a general chemical formula of (ErxYbyCezA(1-x-y-z))3RM3Si2O14, in which the range of x is 0.002 to 0.02, y is 0.005 to 0.1, and z is 0 to 0.15; A is one, two or three elements selected from Ca, Sr, or Ba; R is one or two elements selected from Nb or Ta; M is one or two elements selected from Al or Ga. Using one of such crystals as a gain medium and a diode laser at 940 nm or 980 nm as a pumping source, a 1.5 ?m continuous-wave solid-state laser with high output power and high efficiency, as well as a pulse solid-state laser with high energy and narrow width can be obtained.

Abstract: A semiconductor package and method of assembling a semiconductor package includes encapsulating a first pre-packaged semiconductor die stacked on top of and interconnected with a second semiconductor die. The first packaged semiconductor die is positioned and fixed relative to a lead frame with a temporary carrier such as tape. The second semiconductor die is attached and interconnected directly to the first packaged semiconductor die and lead frame. The interconnected first packaged die and second semiconductor die, and lead frame are encapsulated to form the semiconductor package. Different types of semiconductor packages such as quad flat no-lead (QFN) and ball grid array (BGA) may be formed, which provide increased input/output (I/O) count and functionality.

Abstract: A method of producing semiconductor dies includes providing a semiconductor wafer having front and back faces and an array of integrated circuits fabricated on it. The integrated circuits having active faces at the front face of the wafer. Grooves are cut mechanically from the back face partially through the wafer along saw streets between the integrated circuits. The integrated circuits are then singulated by scanning a laser beam on the front face within and along the saw streets, which scribes the wafer from the front face, and then singulating the integrated circuits by mechanically cleaving the wafer along the saw streets.

Abstract: A method for monitoring free air ball (FAB) formation during a wire bonding process includes attaching a dummy bond wire to an unused location on a first surface of a semiconductor chip carrier, extending the dummy bond wire a predetermined distance from the first surface such that a tip of the dummy bond wire is spaced from the first surface, and forming a dummy FAB at the tip of the bond wire. A profile of the dummy FAB is inspected with an imaging unit to identify any defects in the dummy FAB. An alarm is triggered and the wire bonding process is halted if the dummy FAB is defective so that bonding parameters may be adjusted. The wire bonding process is restarted after the bonding parameters have been adjusted.

Abstract: A method for monitoring free air ball (FAB) formation during a wire bonding process includes attaching a dummy bond wire to an unused location on a first surface of a semiconductor chip carrier, extending the dummy bond wire a predetermined distance from the first surface such that a tip of the dummy bond wire is spaced from the first surface, and forming a dummy FAB at the tip of the bond wire. A profile of the dummy FAB is inspected with an imaging unit to identify any defects in the dummy FAB. An alarm is triggered and the wire bonding process is halted if the dummy FAB is defective so that bonding parameters may be adjusted. The wire bonding process is restarted after the bonding parameters have been adjusted.

Abstract: A semiconductor device includes a semiconductor die having first and second opposing faces and an edge surface. The edge surface has an undercut under the first face. The second face of the semiconductor die is bonded to a bonding surface of a die support member, such as a thermally conductive flag of a lead frame, with a die attach material. A fillet of the bonding material is formed within the undercut.

Abstract: A semiconductor package and method of assembling a semiconductor package includes encapsulating a first pre-packaged semiconductor die stacked on top of and interconnected with a second semiconductor die. The first packaged semiconductor die is positioned and fixed relative to a lead frame with a temporary carrier such as tape. The second semiconductor die is attached and interconnected directly to the first packaged semiconductor die and lead frame. The interconnected first packaged die and second semiconductor die, and lead frame are encapsulated to form the semiconductor package. Different types of semiconductor packages such as quad flat no-lead (QFN) and ball grid array (BGA) may be formed, which provide increased input/output (I/O) count and functionality.