Abstract: The present application provides a high-power semiconductor light-emitting chip with longitudinal carrier modulation and a manufacturing method therefor.

Abstract: A bipolar junction transistor has a collector over a substrate and a base structure over the collector, the base including a III-V ternary semiconductor alloy, the base having a base contact formed thereon. An emitter is over the base structure, and a ledge between the emitter structure and the base contact is 0.3 ?m or less.

Abstract: Immersion cooling systems are disclosed. An example immersion cooling system includes an immersion tank including a cooling fluid and a reservoir to contain a recirculated portion of the cooling fluid. The reservoir is separated from the immersion tank by a height to generate a liquid surface height variance between the cooling fluid in the immersion tank and the cooling fluid in the reservoir. A supply conduit is to fluidly couple the immersion tank and the reservoir. The cooling fluid to be provided from the reservoir to the immersion tank via gravity.

Abstract: A bipolar junction transistor has a collector over a substrate and a multi-layer base structure over the collector, and an emitter over the base structure. The multi-layer base structure includes a first layer having a first III-V semiconductor alloy and a second layer having a second III-V semiconductor alloy having a different composition of elements than the first III-V semiconductor alloy. The second layer has a narrower bandgap than the first layer. The first layer is positioned between the collector and the second layer.

Abstract: A bipolar junction transistor has a collector over a substrate, a base over the collector, and an emitter over the base. The base includes a III-V ternary semiconductor alloy including first, second, and third elements, and having a narrower bandgap than a binary semiconductor alloy including only the first and second elements. At least a portion of the base has a differential concentration of the third element such that a concentration of the third element at a first location in the base is greater than at a second location in the base, the second location between the first location and the collector.

Abstract: A bipolar junction transistor a base over a collector, the base including a III-V ternary semiconductor alloy including first, second, and third elements. The LI-V ternary semiconductor alloy has a narrower bandgap than a binary semiconductor alloy including only the first and second elements. A ledge between an emitter and a base contact being 0.5 ?m or less.

Abstract: Disclosed are an electrode plate and a battery. An electrode plate provided in the present disclosure includes a first current collector and a first functional layer disposed on at least one side of the first current collector, where a plurality of first regions and a plurality of second regions are alternately distributed on a surface of the first functional layer. A content ratio of an element oxygen to an element silicon in the first functional layer within the first region is greater than 4:1. The present disclosure provides the electrode plate and the battery, to at least resolve a problem of low initial efficiency of a lithium-ion battery, and increase battery capacity, thereby improving battery energy density.

Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having increased collector thickness for improved ruggedness. In some embodiments, the collector thickness can be above 1.1 microns. The collector can have at least one doping concentration grading. The collector can have a high doping concentration at a junction between the collector and the sub-collector, such as at the high end of the grading. In some embodiments, the high doping concentration can be above about 9×1016 cm?3. The collector can include a region with high doping concentration adjacent the base. The collector can include a discontinuity in the doping concentration, such as at the low end of the grading. Such bipolar transistors can be implemented, for example, in power amplifiers.

Abstract: Provided are a method for assaying a specific IgM antibody and a total antibody for the 2019 novel coronavirus (2019-nCOV), a method for determining whether subjects are infected with 2019-nCOV, and a virus antigen and a kit for carrying out the above-mentioned detection.

Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having increased collector thickness for improved ruggedness. In some embodiments, the collector thickness can be above 1.1 microns. The collector can have at least one doping concentration grading. The collector can have a high doping concentration at a junction between the collector and the sub-collector, such as at the high end of the grading. In some embodiments, the high doping concentration can be above about 9×1016 cm?3. The collector can include a region with high doping concentration adjacent the base. The collector can include a discontinuity in the doping concentration, such as at the low end of the grading. Such bipolar transistors can be implemented, for example, in power amplifiers.

Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having increased collector thickness for improved ruggedness. In some embodiments, the collector thickness can be above 1.1 microns. The collector can have at least one doping concentration grading. The collector can have a high doping concentration at a junction between the collector and the sub-collector, such as at the high end of the grading. In some embodiments, the high doping concentration can be above about 9×1016 cm?3. The collector can include a region with high doping concentration adjacent the base. The collector can include a discontinuity in the doping concentration, such as at the low end of the grading. Such bipolar transistors can be implemented, for example, in power amplifiers.

Abstract: Disclosed are a group resource release method, device and system. The method includes: an evolved Node B (eNB) determines, from group cells which belong to the eNB, a target cell which needs to release a group resource; and the eNB sends to the target cell a message for instructing to release the group resource, wherein the message for instructing to release the group resource is used for instructing the target cell to release an air interface resource of the target cell and/or a group resource which is allocated to the target cell by the eNB. It is solved by the embodiment of the disclosure the problems that the release speed is slow and the utilization rate of group call resources in a trunking group call is low, thus effectively improving the utilization rate of the group call resources in the group call.

Abstract: Disclosed are a group resource release method, device and system. The method includes: an evolved Node B (eNB) determines, from group cells which belong to the eNB, a target cell which needs to release a group resource; and the eNB sends to the target cell a message for instructing to release the group resource, wherein the message for instructing to release the group resource is used for instructing the target cell to release an air interface resource of the target cell and/or a group resource which is allocated to the target cell by the eNB. It is solved by the embodiment of the disclosure the problems that the release speed is slow and the utilization rate of group call resources in a trunking group call is low, thus effectively improving the utilization rate of the group call resources in the group call.

Abstract: Provided are a method and system for establishing a group call context. The method includes establishing a group call context between a cluster Evolved Packet Core (EPC) and a first base station to which speaking right UE belongs, establishing a group call context between the cluster EPC and a second base station to which non-speaking right UE belongs. A base station and a cluster EPC are also provided. Accordingly, the group call context can be established between the base station and a cluster network.