Patents by Inventor Guo Lin Liu

Guo Lin Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WITH A POROUS DIELECTRIC FILM
    Publication number: 20080248644
    Abstract: In the fabrication of a semiconductor device, an SiO2GeO2 film is formed on a substrate, then washed with water to dissolve the GeO2, leaving a porous SiO2 film. The SiO2GeO2 film may be deposited directly on the substrate, or an SiGe film may be deposited on the substrate and then oxidized to form the SiO2GeO2 film. The porous SiO2 film has an easily controllable dielectric constant and can be advantageously used as an interlayer dielectric film.
    Type: Application
    Filed: March 12, 2008
    Publication date: October 9, 2008
    Applicant: OKI ELECTRIC INDUSTRY CO., LTD.
    Inventor: Guo lin Liu
  • Method of manufacturing semiconductor device
    Patent number: 7071076
    Abstract: A semiconductor device has an STI oxide film (106), of which surface is positioned higher than the surface of the silicon substrate (100) to prevent a pointed portion and a thin film thickness of a gate oxide film (108). The gate oxide film (106) becomes thicker toward a side wall (112) of the STI oxide film (106) to prevent the leakage current and increase the gate breakdown voltage.
    Type: Grant
    Filed: June 25, 2004
    Date of Patent: July 4, 2006
    Assignee: Oki Electric Industry Co., Ltd.
    Inventor: Guo Lin Liu
  • Semiconductor device and method of manufacturing the same
    Publication number: 20040262707
    Abstract: A semiconductor device has an STI oxide film (106), of which surface is positioned higher than the surface of the silicon substrate (100) to prevent a pointed portion and a thin film thickness of a gate oxide film (108). The gate oxide film (106) becomes thicker toward a side wall (112) of the STI oxide film (106) to prevent the leakage current and increase the gate breakdown voltage.
    Type: Application
    Filed: June 25, 2004
    Publication date: December 30, 2004
    Inventor: Guo Lin Liu