Patents by Inventor Guoming XIA

Guoming XIA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10876838
    Abstract: The invention relates to a silicon-based micro-machined vibratory gyroscope with an I-shaped structure, which is a measuring instrument used for measuring the angular rate perpendicular to a base, and comprises a top monocrystalline silicon, a middle monocrystalline silicon, and a bottom monocrystalline silicon; the top monocrystalline silicon being arranged with signal input and output lines is the silicon micro gyroscope packaged cover plate; the middle monocrystalline silicon is where the gyroscope mechanical structures are fabricated; the bottom monocrystalline silicon is a gyroscope substrate with fixed pedestals; the middle monocrystalline silicon layer is sealed in a closed cavity formed by top and bottom monocrystalline silicon layers.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: December 29, 2020
    Assignee: NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Qin Shi, Anping Qiu, Guoming Xia, Yang Zhao
  • Publication number: 20190017822
    Abstract: The invention relates to a silicon-based micro-machined vibratory gyroscope with an I-shaped structure, which is a measuring instrument used for measuring the angular rate perpendicular to a base, and comprises a top monocrystalline silicon, a middle monocrystalline silicon, and a bottom monocrystalline silicon; the top monocrystalline silicon being arranged with signal input and output lines is the silicon micro gyroscope packaged cover plate; the middle monocrystalline silicon is where the gyroscope mechanical structures are fabricated; the bottom monocrystalline silicon is a gyroscope substrate with fixed pedestals; the middle monocrystalline silicon layer is sealed in a closed cavity formed by top and bottom monocrystalline silicon layers.
    Type: Application
    Filed: September 26, 2016
    Publication date: January 17, 2019
    Applicant: NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Qin SHI, Anping QIU, Guoming XIA, Yang ZHAO