Abstract: There is provided a neural network information receiving method and system, and a sending method and system. The receiving method comprises: acquiring a reception initiation time for neuron information (S100); receiving rostral neuron information output by rostral neurons (S200); acquiring delay information of the rostral neuron information according to the reception initiation time, the rostral neuron information and a delay algorithm (S300); and determining composite information output by the rostral neurons according to the rostral neuron information and the delay information (S400). The receiving method and system and sending method and system take the delay information into consideration in the output information of neurons, such that the neuron information is able to carry more detailed time-domain information, thus augmenting operation modes of the neurons and enhancing the generalization ability of the whole network.

Abstract: A device occupation method includes a first device that obtains information related to the first device or information related to a second device, where the second device occupies a first to-be-occupied device, and the first device prepares to occupy the first to-be-occupied device, and occupying, by the first device, the first to-be-occupied device when the information matches.

Abstract: A device occupation method includes a first device that obtains information related to the first device or information related to a second device, where the second device occupies a first to-be-occupied device, and the first device prepares to occupy the first to-be-occupied device, and occupying, by the first device, the first to-be-occupied device when the information matches.

Abstract: A voice payment method and an electronic device are provided.

Abstract: The disclosure relates to a self-adaptive leakage value neuron information processing method and system. The method includes: receiving front end pulse neuron output information; reading current pulse neuron information, wherein the current pulse neuron information includes self-adaptive membrane potential leakage information; calculating current pulse neuron output information according to the front end pulse neuron output information and the current pulse neuron information; updating the self-adaptive membrane potential leakage information according to the current pulse neuron output information; outputting the current pulse neuron output information.

Abstract: There are provided a neural network weight discretizing method, system and device, and a computer readable storage medium. The method includes acquiring a weight value range and a number of discrete weight states, the weight value range referring to a range of discrete weight values consisting of a maximum weight value of a current time step and a minimum weight value of the current time step, and the number of discrete weight states referring to the quantity of discrete weight states. The method also includes acquiring a weight state of a previous time step and a weight increment of the current time step and acquiring a state transfer direction by using a directional function according to the weight increment of the current time step. The method also includes acquiring a weight state of the current time step according to the weight state of the previous time step, the weight increment of the current time step, the state transfer direction, the weight value range and the number of discrete weight states.

Abstract: A device occupation method includes a first device that obtains information related to the first device or information related to a second device, where the second device occupies a first to-be-occupied device, and the first device prepares to occupy the first to-be-occupied device, and occupying, by the first device, the first to-be-occupied device when the information matches.

Abstract: The disclosure relates to a self-adaptive leakage value neuron information processing method and system. The method includes: receiving front end pulse neuron output information; reading current pulse neuron information, wherein the current pulse neuron information includes self-adaptive membrane potential leakage information; calculating current pulse neuron output information according to the front end pulse neuron output information and the current pulse neuron information; updating the self-adaptive membrane potential leakage information according to the current pulse neuron output information; outputting the current pulse neuron output information.

Abstract: A neural network information reception method and system, and a sending method and system. The reception method comprises: acquiring a reception initiation time of neuron information (S100); receiving rostral neuron information output by rostral neurons (S200); acquiring, according to the reception initiation time, the rostral neuron information and a delay algorithm, delay information of the rostral neuron information (S300); and determining, according to the rostral neuron information and the delay information, composite information output by the rostral neurons (S400).

Abstract: Provided are a neural network weight discretizing method, system and device, and a readable storage medium, the method involving: acquiring a weight value range and the number of discrete weight states; acquiring a weight state of the previous time step and a weight increment of the current time step; according to the weight increment of the current time step, using a directional function to acquire a state switching direction; and according to the weight state at the previous time step, the weight increment at the current time step, the state switching direction, the weight value range and the number of discrete weight states, acquiring a weight state of the current time step. The method ensures that the weight values are always constrained in the same discrete-state space, without the need for storing an additional virtual continuous-state implicit weight.

Abstract: The present disclosure relates to a method, system and computer device for converting neural network information. The method comprises receiving neuron input information input by a preceding neuron, comprising receiving artificial neuron input information input by a preceding artificial neuron or receiving spiking neuron input information input by a preceding spiking neuron; converting the artificial neuron input information into spiking neuron conversion information through a preset artificial information conversion algorithm according to the artificial neuron input information input by the preceding artificial neuron; or converting the spiking neuron input information into artificial neuron conversion information through a preset spiking information conversion algorithm according to the spiking neuron input information input by the preceding spiking neuron; and outputting the spiking neuron conversion information or the artificial neuron conversion information.

Abstract: A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device includes: a substrate (1); an epitaxial layer at one side of the substrate (1) and including an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further includes an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.