Abstract: The present disclosure relates to the technical field of mine ventilation, and in particular, to a three-dimensional ventilation method and system for mining by 110 construction method in coal and gas outburst mines.

Abstract: In one aspect, a preparation method for a bifacial solar cell utilizes a method of deposition and then bombardment to form an intrinsic silicon layer, thus enhancing an ablation resistance of a solar cell, reducing a metal composite loss and a filing coefficient, and significantly improving an efficiency of an obtained solar cell. Moreover, in the bifacial solar cell of the present disclosure, compared with a second crystalline silicon doped layer, the intrinsic silicon layer has a higher number of —SiH connected to mono-hydrogen atoms, a lower number of SiH2 connected to dihydrogen atoms, and fewer carrier recombination defects in the intrinsic silicon layer, thus improving field passivation performance.

Abstract: In one aspect, a method for preparing a solar cell includes: forming a selective emitter on a front side of the solar cell, the selective emitter including first and second doped regions, and a P-type doping concentration of the first doped region being greater than that of the second doped region; and bringing a positive electrode of the solar cell to be in electrical contact with the first doped region. The disclosed method can effectively improve a filling factor of the solar cell while ensuring a lower Auger recombination and improving an open circuit voltage and a short-circuit current such that the solar cell has higher conversion efficiency.

Abstract: Disclosed are a multi-directional broadband tuned mass damper and a design method thereof, since a first damping structure and a second damping structure are set on a rigid vibration damping frame, and the first damping structure is provided with a control main frequency, the second damping structure is provided with two control main frequencies, the control main frequency of the second damping structure is greater than that of the first damping structure; under the synergistic effect, the second damping structure mainly effectively broadens the control range for high frequencies, and a plurality of first damping structures control the control main frequency of a low frequency one-to-one, thereby controlling the full frequency, and the extension direction of the first damping structure is the same as that of the second damping structure on the rigid vibration damping frame, ensuring isotropic mass and stiffness distribution characteristics thereof; and furthermore, when using different control frequency range

Abstract: A display substrate and a manufacturing method thereof, and a display device, relate to the technical field of displaying. The display substrate includes a base substrate; a pixel defining layer; and a common transport layer arranged at one side of the pixel defining layer away from the base substrate, including a first blocking pattern and first transport patterns located at two sides of the first blocking pattern; the first blocking pattern and the first transport pattern at least including one identical element, material structures of the first blocking pattern and the first transport pattern are different, and a lateral resistance of the first blocking pattern is greater than a lateral resistance of the first transport pattern.

Abstract: The present invention provides a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate and a preparation method therefor and belongs to the field of rectifiers. The rectifier comprises a silicon substrate, a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer, a non-doped InGaN layer and a SiNx passivation layer that are stacked in sequence. The rectifier further comprises a mesa isolation groove and a Schottky contact electrode that are arranged at one side. The mesa isolation groove is in contact with the non-doped GaN layer, the non-doped InGaN layer, the SiNx passivation layer and the Schottky contact electrode. The Schottky contact electrode is in contact with the mesa isolation groove and the non-doped GaN layer. The thickness of the two-dimensional AlN layer is only several atomic layers, thus the received stress and polarization intensity are greater than those of the AlGaN layer.

Abstract: A wireless network switching method. In the method, a station and a target access device directly generate a message integrity check key by means of a domain key, and verify an integrity code on the basis of the message integrity check key, so as to realize the authentication of two parties; and when the authentication of the opposite party is successful, session keys are generated by means of the domain key and in conjunction with random numbers of the two parties, thereby simplifying a switching process and realizing secure and efficient network switching. Further disclosed are a corresponding station and a corresponding access device.

Abstract: The present invention discloses compounds of Formula (I), or pharmaceutically acceptable salts, ester, stereoisomer, tautomer, solvate, hydrate, or combination thereof: which inhibit the Apoptosis signal-regulating kinase 1 (ASK-1), which associated with autoimmune disorders, neurodegenerative disorders, inflammatory diseases, chronic kidney disease, cardiovascular disease. The present invention further relates to pharmaceutical compositions comprising the aforementioned compounds for administration to a subject suffering from ASK-1 related disease. The invention also relates to methods of treating an ASK-1 related disease in a subject by administering a pharmaceutical composition comprising the compounds of the present invention. The present invention specifically relates to methods of treating ASK-1 associated with hepatic steatosis, including non-alcoholic fatty liver disease (NAFLD) and non-alcohol steatohepatitis disease (NASH).

Abstract: The present application proposes a method and apparatus for transfer learning-based localization of igneous carbonate-hosted rare earth mineralization. The technology relates to electromagnetic exploration and includes obtaining exploration data for electric, magnetic, seismic, and gravity methods in the target area. Transfer learning-based localization is applied to the electric, magnetic, seismic, and gravity exploration data to determine the cross-sectional map corresponding to the anomalous position of igneous carbonate-hosted rare earth mineralization in the target area. Feature decomposition dimensionality reduction, feature enhancement, and weighted fusion processing are applied to the cross-sectional map, followed by segmentation of the igneous carbonate-hosted rare earth mineralization geological body in the fused image to obtain the spatial distribution of the detection target.

Abstract: In the preparation process for a passivated contact battery, preparation of a back surface field passivation structure thereof comprises: growing a tunneling oxide layer on a back surface of a silicon wafer; growing an intrinsic silicon carbide layer on a surface of the tunneling oxide layer; growing a phosphorus-doped silicon carbide layer on a surface of the intrinsic silicon carbide layer; and performing annealing, so as to cause the silicon carbide and the phosphorus in the phosphorus-doped silicon carbide layer to form covalent bonds. The passivated contact battery can be obtained by means of the described preparation process, and same comprises a silicon wafer as well as a tunneling oxide layer, an intrinsic silicon carbide layer, and a phosphorus-doped silicon carbide layer which are sequentially stacked on a back surface of the silicon wafer.

Abstract: A photoelectric detector chip and a preparation method and application thereof are provided. The photoelectric detector chip includes a bottom electrode, a first GaN layer, an i-InyGa1-yN functional layer, a second GaN layer, an i-InxGa1-xN functional layer, a third GaN layer, and a top electrode that are stacked sequentially, where 0?x?1, and y>x; the first GaN layer, the second GaN layer, and the third GaN layer are an n-GaN layer, a p-GaN layer, and an n-GaN layer respectively. The photoelectric detector chip is a vertical-structure dual-band chip. Compared with a transverse structure, the vertical structure can reduce carrier transition time, increase the response speed of the detector, and effectively improve the ?3 dB bandwidth of the detector. The dual bands allow the photoelectric detector chip to load voltages in different directions, thus achieving photoelectric detection in different bands.

Abstract: The application provides an estimation method of detecting elevation by a semi-airborne electromagnetic method, including the following steps: S1, judging original elevation data to obtain wrong point data and normal data; S2, filtering the wrong point data by an improved Kalman filtering method, and filtering the normal data by a conventional Kalman filtering method; S3, fusing a filtering result of the wrong point data and a filtering result of the normal data, and taking a fused result as a measured value sequence used in a next working process; and S4, repeating the S1-S3 until the fused result meets preset requirements.

Abstract: The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded AlyGa1-yN layer, and an undoped N-polar plane AlxGa1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiNz passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector? in the UV solar-blind band.

Abstract: The present application provides a method and a device for encryption of a video stream, a communication equipment, and a storage media. The method for encryption of a video stream includes: acquiring a video stream, encrypting a data part of an I frame by using a first encryption algorithm to obtain a first encrypted data, and encrypting an encryption key of the first encrypted data by using a second encryption algorithm to obtain a second encrypted data, and storing the second encrypted data in a frame header of the I frame to obtain an encrypted I frame.

Abstract: A polybenzoxazine aerogel film and a preparation method thereof are provided in the present disclosure, belonging to the field of preparation of aerogel film composite material. The preparation method of the polybenzoxazine aerogel film includes the following steps: dissolving benzoxazine monomer in a solvent and catalyzing to obtain a polybenzoxazine solution; coating the polybenzoxazine solution as a wet gel film; and aging and drying the wet gel film to obtain the polybenzoxazine aerogel film.

Abstract: The present invention provides compounds represented by Formula I, or pharmaceutically acceptable salts, stereoisomers, solvates, hydrates or combination thereof, The invention also provides pharmaceutical compositions comprising these compounds and methods of using this compounds for treating FXR-mediated or TGR5-mediated diseases or conditions.

Abstract: A chip for visible-light communication (VLC), a preparation method, and an application of the chip includes a substrate, a buffer layer, an intrinsic GaN layer, a first GaN layer, an i-InxGa1-xN functional layer, a second GaN layer, an i-InyGa1-yN functional layer, a third GaN layer, and a top electrode that are stacked sequentially, where 0?x<1 and 0?y?1. Sidewalls of the i-InxGa1-xN functional layer, the second GaN layer, the i-InyGa1-yN functional layer, and the third GaN layer are each provided with a SiO2 isolation layer. A bottom electrode is arranged in an upper portion or on a surface of the first GaN layer, and the SiO2 isolation layer on the sidewall of the i-InxGa1-xN functional layer is located between the bottom electrode and the i-InxGa1-xN functional layer. Based on the structural design and growth process for the chip for VLC, dual-band detection by a high-bandwidth chip can be implemented.

Abstract: An operation control panel push-pull mechanism and a steam-roasting electric appliance are provided. The operation control panel push-pull mechanism is capable of driving an operation control panel of an electric appliance to move between a first position and a second position, and includes a driving part, a fitting part and a first pushing part; the fitting part is fixed relative to a body of the steam-roasting electric appliance, the first pushing part is rotatably connected with the driving part and fixedly connected with the operation control panel, a rail structure is provided on the first pushing part, the fitting part cooperates with the rail structure, and the driving part is capable of driving the first pushing part to drive the operation control panel to move between the first position and the second position.

Abstract: A molybdenum diselenide (MoSe2)/InGaN multispectral photoelectric detector includes a substrate, a buffer layer, an InGaN layer and a MoSe2 layer that are arranged sequentially from bottom to top. The MoSe2 layer partially covers the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the InGaN layer not covered by the MoSe2 layer and on a part of the MoSe2 layer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe2 layer. A preparation method of the detector is further provided. The detector detects red light and blue light at the same time. While realizing a sensitivity enhanced micro-nano structure on a surface of a detector chip, the detector improves quantum efficiency in blue and red bands, and enhances resonant absorption for the blue light and red light.

Abstract: A two-sided time-sharing driving and acquisition system based on dry contacts comprises k dry contacts, a processor, p acquisition circuits, and m driving circuits. The p acquisition circuits are evenly divided into two groups which are separately disposed at two sides of the k dry contacts. The m driving circuits are separately disposed at the two sides of the k dry contacts. A system fault detection method and the two-sided time-sharing driving and acquisition system have the following advantages: the state of input acquisition circuits and cables monitored in real time during system debugging or running, and faults caused by exceptions of the acquisition circuits and the cables can be reported in time.