Patents by Inventor Guoqiu WANG

Guoqiu WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12287250
    Abstract: A thin-film pressure sensor and an arrangement method thereof are provided. The thin-film pressure sensor includes a flat diaphragm and a first induction unit in the shape of a thin film arranged on the flat diaphragm, where the first induction unit includes m rotating multi-segment resistance wires arranged around the center of a circle of a circular deformation area of the flat diaphragm, m/2 rotating multi-segment resistance wires on one side are connected in series to form a second induction resistor, and m/2 rotating multi-segment resistance wires on the other side are connected in series to form a fourth induction resistor, where m is a multiple of 4; the arrangement method includes arrangement for the first induction unit. The radial strain and the tangential strain of the flat diaphragm can be fully utilized, and the detection sensitivity of the thin-film pressure sensor is improved.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: April 29, 2025
    Assignee: HUNAN CHNTEK SENSOR TECHNOLOGY CO., LTD.
    Inventors: Guoqiu Wang, Jian Huang, Cui Chen
  • Publication number: 20230184602
    Abstract: A thin-film pressure sensor and an arrangement method thereof are provided. The thin-film pressure sensor includes a flat diaphragm and a first induction unit in the shape of a thin film arranged on the flat diaphragm, where the first induction unit includes m rotating multi-segment resistance wires arranged around the center of a circle of a circular deformation area of the flat diaphragm, m/2 rotating multi-segment resistance wires on one side are connected in series to form a second induction resistor, and m/2 rotating multi-segment resistance wires on the other side are connected in series to form a fourth induction resistor, where m is a multiple of 4; the arrangement method includes arrangement for the first induction unit. The radial strain and the tangential strain of the flat diaphragm can be fully utilized, and the detection sensitivity of the thin-film pressure sensor is improved.
    Type: Application
    Filed: January 29, 2021
    Publication date: June 15, 2023
    Applicant: HUNAN CHNTEK SENSOR TECHNOLOGY CO., LTD.
    Inventors: Guoqiu WANG, Jian HUANG, Cui CHEN