Abstract: A organic fertilizer for controlling pollution or accumulation of heavy metal cadmium in rice and a preparation method and an application method thereof are related to the technical field of fertilizers. The fertilizer is, based on 100 kg of organic material with a water content of 15%, added with 0.05-5 kg of iron salt calculated as iron, and is also added with manganese salt, zinc salt and copper salt, wherein a mass ratio of the iron salt calculated as iron, the manganese salt calculated as manganese, the zinc salt calculated as zinc and the copper salt calculated as copper is 1: 0.2-8: 0.08-2: 0.001-0.5.

Abstract: The present invention provides a soil heavy metal curing agent for controlling accumulation of heavy metals of crops and its preparation method. The curing agent is made from the following parts of raw materials by weight: 60˜140 parts of substance containing carbon-carbon double bond; 1˜400 parts of sulfo-compound by sulfur; 50˜500 parts of organic matter by 10% water content; 0˜400 parts of water; 0˜100 parts of an initiator; 0˜200 parts of a reducer; and 0˜200 parts of a strong base. The curing agent for heavy metals in the soil according to the present invention can reduce the cadmium, lead and mercury content in the soil and further greatly reduce the roots' absorption of these heavy metals.

Abstract: A noninvasive method of source-sink regulation in rice belongs to the technical field of rice production. In this method, the source-sink relationship is regulated by a rice sterile line and its identical type of maintaining line being subjected to mixed-planting and insulated pollination, or sowing and transplanting at different times and insulated pollination, so as to construct rice plant samples with gradient difference of source-sink levels. The present invention is a kind of native, natural noninvasive method of source-sink regulation, which could broaden the traditional thinking of source-sink theoretical research, especially overcome the deficiency in conventional methods such as leaf-cutting, spikelet-thinning that lead to physical injury or physiological interference.

Abstract: The present invention provides a soil heavy metal curing agent for controlling accumulation of heavy metals of crops and its preparation method. The curing agent is made from the following parts of raw materials by weight: 60˜140 parts of substance containing carbon-carbon double bond; 1˜400 parts of sulfo-compound by sulfur; 50˜500 parts of organic matter by 10% water content; 0˜400 parts of water; 0˜100 parts of an initiator; 0˜200 parts of a reducer; and 0˜200 parts of a strong base. The curing agent for heavy metals in the soil according to the present invention can reduce the cadmium, lead and mercury content in the soil and further greatly reduce the roots absorption of these heavy metals.

Abstract: A noninvasive method of source-sink regulation in rice belongs to the technical field of rice production. In this method, the source-sink relationship is regulated by a rice sterile line and its identical type of maintaining line being subjected to mixed-planting and insulated pollination, or sowing and transplanting at different times and insulated pollination, so as to construct rice plant samples with gradient difference of source-sink levels. The present invention is a kind of native, natural noninvasive method of source-sink regulation, which could broaden the traditional thinking of source-sink theoretical research, especially overcome the deficiency in conventional methods such as leaf-cutting, spikelet-thinning that lead to physical injury or physiological interference.

Abstract: An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains a array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.

Abstract: An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains a array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.

Abstract: An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains an array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.

Abstract: An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains an array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.